IXYS IXFV15N100P Polar power mosfet hiperfet Datasheet

PolarTM Power MOSFET
HiPerFETTM
IXFH15N100P
IXFV15N100P
IXFV15N100PS
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G
D
S
Test Conditions
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
15
A
IDM
TC = 25°C, pulse width limited by TJM
40
A
IAR
TC = 25°C
7.5
A
EAS
TC = 25°C
500
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
PD
TC = 25°C
543
W
Maximum Ratings
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
D (TAB)
PLUS220SMD (IXFV_S)
G
G = Gate
S = Source
300
°C
Features
TSOLD
Plastic body for 10s
260
°C
z
z
FC
Mounting force (PLUS 220)
Weight
TO-247
PLUS 220 types
Nm/lb.in.
11..65/2.5..14.6
N/lb.
6
4
g
g
D (TAB)
D (TAB)
Maximum lead temperature for soldering
1.13/10
S
TO-247 (IXFH)
TL
Mounting torque (TO-247)
1000V
15A
Ω
760mΩ
300ns
PLUS220 (IXFV)
Symbol
Md
=
=
≤
≤
z
z
D
= Drain
TAB = Drain
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
1000
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
z
Easy to mount
Space savings
High power density
V
6.5
V
± 100
nA
25 μA
1.0 mA
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
z
Applications:
z
z
z
z
670
760 mΩ
z
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
DS99891A(4/08)
IXFH15N100P IXFV15N100P
IXFV15N100PS
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
6.5
VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate input resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
10.5
S
5140
pF
322
pF
43
pF
1.20
Ω
41
ns
44
ns
44
ns
58
ns
97
nC
38
nC
42
nC
0.23 °C/W
RthJC
RthCS
PLUS220 (IXFV) Outline
(TO-247, PLUS220)
0.21
Source-Drain Diode
TJ = 25°C unless otherwise specified)
°C/W
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
15
A
ISM
Repetitive
60
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
TO-247 (IXFH) Outline
300 ns
IF = 7.5A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
0.6
μC
7
A
∅P
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PLUS220SMD (IXFV_S) Outline
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFH15N100P IXFV15N100P
IXFV15N100PS
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
16
30
VGS = 10V
9V
14
VGS = 10V
27
24
12
ID - Amperes
ID - Amperes
21
10
8V
8
6
9V
18
15
8V
12
9
4
6
7V
2
7V
3
0
0
0
2
4
6
8
10
12
0
3
6
9
15
18
21
24
27
30
Fig. 4. RDS(on) Normalized to ID = 7.5A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
3.0
16
VGS = 10V
9V
14
2.8
VGS = 10V
2.6
RDS(on) - Normalized
12
8V
ID - Amperes
12
VDS - Volts
VDS - Volts
10
8
7V
6
4
2.4
2.2
2.0
1.8
I D = 15A
1.6
I D = 7.5A
1.4
1.2
1.0
0.8
6V
2
0.6
0
0.4
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-50
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 7.5A Value
vs. Drain Current
50
75
100
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
16
2.6
VGS = 10V
2.4
TJ = 125ºC
14
2.2
12
2
ID - Amperes
RDS(on) - Normalized
25
TJ - Degrees Centigrade
1.8
1.6
10
8
6
1.4
4
1.2
2
TJ = 25ºC
1
0.8
0
0
3
6
9
12
15
18
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
21
24
27
30
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFH15N100P IXFV15N100P
IXFV15N100PS
Fig. 7. Input Admittance
Fig. 8. Transconductance
16
18
16
14
TJ = 125ºC
25ºC
- 40ºC
14
g f s - Siemens
ID - Amperes
12
10
8
6
12
TJ = - 40ºC
25ºC
125ºC
10
8
6
4
4
2
2
0
0
5.0
5.5
6.0
6.5
7.0
7.5
8.0
0
8.5
2
4
6
VGS - Volts
45
40
14
35
12
30
25
TJ = 125ºC
12
14
16
18
VDS = 500V
I D = 7.5A
I G = 10mA
10
8
6
TJ = 25ºC
15
4
10
2
5
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1.1
20
40
VSD - Volts
60
80
100
120
140
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1.000
Ciss
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
10
Fig. 10. Gate Charge
16
VGS - Volts
IS - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
20
8
ID - Amperes
Coss
100
Crss
f = 1 MHz
10
0
5
0.100
10
15
20
25
30
35
40
VDS - Volts
0.010
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_15N100P(76)4-1-08-A
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