DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702N 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier FEATURES BGD702N PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common • Gold metallization ensures excellent reliability. 5 +VB 7 common APPLICATIONS 8 common • CATV systems operating in the 40 to 750 MHz frequency range. 9 output handbook, halfpage DESCRIPTION 1 Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). 2 3 8 5 7 9 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER CONDITIONS power gain total current consumption (DC) MIN. MAX. UNIT f = 50 MHz 18 19 dB f = 750 MHz 18.5 − dB VB = 24 V − 435 mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT Vi RF input voltage − 65 dBmV Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −20 +100 °C 2001 Nov 02 2 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD702N CHARACTERISTICS Table 1 Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Gp power gain f = 50 MHz 18 19 dB f = 750 MHz 18.5 − dB SL slope cable equivalent f = 40 to 750 MHz 0.2 2 dB FL flatness of frequency response f = 40 to 750 MHz − ±0.25 dB S11 input return losses S22 output return losses f = 40 to 80 MHz 20 − dB f = 80 to 160 MHz 19 − dB f = 160 to 320 MHz 18 − dB f = 320 to 640 MHz 17 − dB f = 640 to 750 MHz 16 − dB f = 40 to 80 MHz 20 − dB f = 80 to 160 MHz 19 − dB f = 160 to 320 MHz 18 − dB f = 320 to 640 MHz 17 − dB f = 640 to 750 MHz 16 − dB S21 phase response f = 50 MHz −45 +45 deg CTB composite triple beat 110 channels flat; Vo = 44 dBmV; measured at 745.25 MHz − −58 dB Xmod cross modulation 110 channels flat; Vo = 44 dBmV; measured at 55.25 MHz − −62 dB CSO composite second order distortion 110 channels flat; Vo = 44 dBmV; measured at 746.5 MHz − −58 dB d2 second order distortion note 1 − −68 dB Vo output voltage dim = −60 dB; note 2 61 − dBmV F noise figure Itot total current consumption (DC) f = 50 MHz − 5.5 dB f = 450 MHz − 6.5 dB f = 550 MHz − 6.5 dB f = 600 MHz − 7 dB f = 750 MHz − 8.5 dB note 3 − 435 mA Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. 2. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2001 Nov 02 3 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier Table 2 BGD702N Bandwidth 40 to 600 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL Gp PARAMETER power gain CONDITIONS MIN. MAX. UNIT f = 50 MHz 18 19 dB f = 600 MHz 18.5 − dB SL slope cable equivalent f = 40 to 600 MHz 0.2 2 dB FL flatness of frequency response f = 40 to 600 MHz − ±0.2 dB S11 input return losses f = 40 to 80 MHz 20 − dB f = 80 to 160 MHz 19 − dB f = 160 to 320 MHz 18 − dB f = 320 to 600 MHz 17 − dB f = 40 to 80 MHz 20 − dB f = 80 to 160 MHz 19 − dB f = 160 to 320 MHz 18 − dB f = 320 to 600 MHz 17 − dB S22 output return losses S21 phase response f = 50 MHz −45 +45 deg CTB composite triple beat 85 channels flat; Vo = 44 dBmV; measured at 595.25 MHz − −65 dB Xmod cross modulation 85 channels flat; Vo = 44 dBmV; measured at 55.25 MHz − −65 dB CSO composite second order distortion 85 channels flat; Vo = 44 dBmV; measured at 596.5 MHz − −60 dB d2 second order distortion note 1 − −70 dB Vo output voltage dim = −60 dB; note 2 64 − dBmV F noise figure see Table 1 − − dB Itot total current consumption (DC) note 3 − 435 mA Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 541.25 MHz; Vq = 44 dBmV; measured at fp + fq = 596.5 MHz. 2. Measured according to DIN45004B: fp = 590.25 MHz; Vp = Vo; fq = 597.25 MHz; Vq = Vo −6 dB; fr = 599.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 588.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2001 Nov 02 4 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier Table 3 BGD702N Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL Gp PARAMETER power gain CONDITIONS MIN. MAX. UNIT f = 50 MHz 18 19 dB f = 550 MHz 18.5 − dB SL slope cable equivalent f = 40 to 550 MHz 0.2 2 dB FL flatness of frequency response f = 40 to 550 MHz − ±0.2 dB S11 input return losses f = 40 to 80 MHz 20 − dB f = 80 to 160 MHz 19 − dB f = 160 to 320 MHz 18 − dB f = 320 to 550 MHz 17 − dB f = 40 to 80 MHz 20 − dB f = 80 to 160 MHz 19 − dB f = 160 to 320 MHz 18 − dB f = 320 to 550 MHz 17 − dB S22 output return losses S21 phase response f = 50 MHz −45 +45 deg CTB composite triple beat 77 channels flat; Vo = 44 dBmV; measured at 547.25 MHz − −67 dB Xmod cross modulation 77 channels flat; Vo = 44 dBmV; measured at 55.25 MHz − −67 dB CSO composite second order distortion 77 channels flat; Vo = 44 dBmV; measured at 548.5 MHz − −62 dB d2 second order distortion note 1 − −72 dB Vo output voltage dim = −60 dB; note 2 64.5 − dBmV F noise figure see Table 1 − − dB Itot total current consumption (DC) note 3 − 435 mA Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. 2. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 2001 Nov 02 5 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD702N PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 0.38 L min. p Q max. 8.8 4.15 3.85 2.4 REFERENCES IEC JEDEC EIAJ q1 q2 38.1 25.4 10.2 S U1 U2 max. 4.2 44.75 8 EUROPEAN PROJECTION W w 6-32 0.25 UNC y Z max. 0.1 3.8 ISSUE DATE 99-02-06 SOT115J 2001 Nov 02 q 6 Philips Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier BGD702N DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 02 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613518/03/pp8 Date of release: 2001 Nov 02 Document order number: 9397 750 09025