DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1049 Base station LDMOS transistor Product specification Supersedes data of 2001 Dec 05 2003 May 14 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 FEATURES DESCRIPTION • Typical performance at a supply voltage of 27 V: 125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. – 1-tone CW; IDQ = 1000 mA – Output power = 125 W PINNING - SOT502A – Gain = 16.5 dB PIN – Efficiency = 54% DESCRIPTION – EDGE output power = 45 W (AV) 1 drain – ACPR400 = −64 dBc at 400 kHz (EDGE; IDQ = 750 mA) 2 gate 3 source; connected to flange – EVM = 2% rms (AV) (EDGE; IDQ = 750 mA) • Easy power control • Excellent ruggedness handbook, halfpage 1 • High power gain • Excellent thermal stability • Designed for broadband operation (800 to 1000 MHz) 3 2 • Internally matched for ease of use. Top view APPLICATIONS MBK394 Fig.1 Simplified outline SOT502A . • RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range. QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone 1-tone CW Gp (dB) ηD (%) d3 (dBc) ACPR 400 (dBc) EVM % rms (AV) 125 (PEP) 15.5 37 −32 − − 125 16.5 54 − − − 15 32 − −64 2 MIN. MAX. UNIT f (MHz) 920 GSM EDGE PL (W) 45 (AV) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VDS drain-source voltage − 75 V VGS gate-source voltage − ±15 V Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C 2003 May 14 2 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-c thermal resistance from junction to case Th = 25 °C, PL = 35 W (AV), note 1 0.42 K/W Rth j-h thermal resistance from junction to heatsink Th = 25 °C, PL = 35 W (AV), note 2 0.62 K/W Notes 1. Thermal resistance is determined under RF operating conditions. 2. Depending on mounting condition in application. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 3 mA 75 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 300 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 36 V − − 3 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 45 − − A IGSS gate leakage current VGS = ±20 V; VDS = 0 − − 1 µA gfs forward transconductance VDS = 10 V; ID = 10 A − 9 − S RDSon drain-source on-state resistance VGS = 9 V; ID = 10 A − 60 − mΩ APPLICATION INFORMATION RF performance in a common source class-AB circuit; VDS = 27 V; Th = 25 °C; unless otherwise specified. Mode of operation: 2-tone CW, 100 kHz spacing; IDQ = 1130 mA; f = 890 MHz SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp gain power 14.6 15.5 − dB ηD drain efficiency 33 37 − % IRL input return loss − −12 −6 dB d3 third order inter modulation distortion − −32 −25 dBc PL = 125 W (PEP) Mode of operation: GSM EDGE; IDQ = 750 mA; f = 920 MHz SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp gain power − 15 − dB ηD drain efficiency − 32 − % ACPR 400 adjacent channel power ratio − −64 − dBc EVM (AV) EVM rms average signal distortion − 2 − % EVM peak EVM rms peak signal distortion − 2.2 − % PL = 45 W (AV) Mode of operation: 1-tone CW; IDQ = 1000 mA; f = 920 MHz SYMBOL PARAMETER Gp gain power ηD drain efficiency 2003 May 14 CONDITIONS PL = PL 1 dB = 125 W 3 MIN. TYP. MAX. UNIT − 16.5 − dB − 54 − % Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 MLE061 16 Gp (dB) 15 2 EVMrms (AV) handbook, halfpage ηD (%) Gp MLE062 −62 ACPR 400 40 handbook, halfpage (dBc) −64 30 (%) 1.5 ηD EVM 14 −66 20 1 ACPR400 13 −68 10 12 0 10 20 −70 0 50 40 PL (AV)(W) 30 0.5 0 0 10 20 30 40 50 PL (AV)(W) VDS = 27 V; f = 920 MHz; IDQ = 750 mA; Th ≤ 25 °C. VDS = 27 V; f = 920 MHz; IDQ = 750 mA; Th ≤ 25 °C. Fig.3 Fig.2 GSM EDGE ACPR400 and EVM as functions of average load power; typical values. GSM EDGE power gain and efficiency as functions of load power; typical values. MLE064 50 handbook, halfpage η MLE063 18 handbook, halfpage ηD Gp (dB) (4) (%) 60 40 ηD gain (dB) 16.5 η(1,2,3) (%) 16 (5) 30 17 17 40 15.5 Gp 20 15 (6) 16 10 20 14.5 0 0 15 0 50 50 0 150 100 PL (AV) (W) 14 100 150 PL (PEP) (W) VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz; f2 = 920.1 MHz. (1) η at Th = −40 °C. (2) η at Th = 20 °C. (3) η at Th = 80 °C. (4) gain at Th = −40 °C. (5) gain at Th = 20 °C. (6) gain at Th = 80 °C. VDS = 27 V; f = 920 MHz; IDQ = 1000 mA; Fig.5 Fig.4 1-tone CW power gain and efficiency as functions of load power; typical values. 2003 May 14 4 2-tone power gain and efficiency as functions of load power at different temperatures. Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 MLE065 −20 MLE066 −30 handbook, halfpage handbook, halfpage d3 (dBc) d5 (dBc) (3) −30 −40 (1) −40 (2) −50 (1) (2) −50 −60 (3) −60 0 50 −70 100 150 PL (PEP) (W) VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz; f2 = 920.1 MHz. (1) Th = −40 °C. (2) Th = 20 °C. Fig.6 50 100 150 PL (PEP) (W) VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz; f2 = 920.1 MHz. (3) Th = 80 °C. (1) Th = −40 °C. (2) Th = 20 °C. Third order intermodulation distortion as a function of load power at different temperatures. Fig.7 MLE067 −40 0 (3) Th = 80 °C. Fifth order intermodulation distortion as a function of load power at different temperatures. MLE068 20 handbook, halfpage handbook, halfpage d7 (dBc) gain (dB) (3) (2) −50 ηD (%) (2) 15 40 30 (1) (1) (3) 10 20 (4) −60 5 −70 0 0 50 100 150 PL (PEP) (W) 0 (1) Th = −40 °C. (2) Th = 20 °C. (1) IDQ = 1 A. (3) Th = 80 °C. (2) IDQ = 1.45 A. Seventh order intermodulation distortion as a function of load power at different temperatures. 2003 May 14 50 100 0 150 PL (PEP) (W) VDS = 27 V; f1 = 920.0 MHz; f2 = 920.1 MHz. VDS = 27 V; IDQ = 1.1 A; f1 = 920.0 MHz; Fig.8 10 Fig.9 5 (3) IDQ = 1 A. (4) IDQ = 1.45 A. Power gain and drain efficiency as functions of peak envelope load power; typical values. Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 MLE069 0 MLE070 2 handbook, Z halfpage handbook, halfpage i (Ω) 1.5 dim (dBc) ri −20 1 (1) −40 (2) (5) 0.5 (4) (6) (3) −60 0 xi −0.5 −80 0 50 −1 0.85 100 150 PL (PEP) (W) 0.9 0.95 f (GHz) 1 VDS = 27 V; f1 = 920.0 MHz; f2 = 920.1 MHz. (1) d3; IDQ = 1 A. (2) d5; IDQ = 1 A. (3) d7; IDQ = 1 A. (4) d3; IDQ = 1.3 A. (5) d5; IDQ = 1.3 A. (6) d7; IDQ = 1.3 A. Class-AB operation; VDS = 27 V; IDQ = 1125 mA; PL = 35 W. Values comprised for different parameters. Fig.10 Intermodulation distortion as a function of peak envelope load power; typical values. Fig.11 Input impedance as a function of frequency (series components); typical values. MLE071 2 handbook, Z halfpage L (Ω) 1.5 1 RL 0.5 drain handbook, halfpage 0 ZL XL −0.5 gate Z IN −1 0.85 0.9 0.95 f (GHz) MGS998 1 Class-AB operation; VDS = 27 V; IDQ = 1125 mA; PL = 35 W. Values comprised for different parameters. Fig.12 Input impedance as a function of frequency (series components); typical values. 2003 May 14 Fig.13 Definition of transistor impedance. 6 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 handbook, full pagewidth C2 C15 C3 Q1 C4 L12 C6 Vbias L9 C17 R1 L10 C9 C7 Vsupply L5 C10 L7 L3 RF in L1 C1 L2 L4 Q2 L11 L14 L6 L15 L16 RF out C13 C18 C5 C11 L8 C12 C8 L13 C16 C14 MDB168 Fig.14 Test circuit for 860 to 900 MHz. 2003 May 14 7 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 handbook, full pagewidth PHILIPS PHILIPS Input Rev C Output Rev C Vbias in C2 Q1 C4 C15 C17 L12 C6 L9 C9 Vd in C3 L5 L3 C7 C5 L1 C1 L2 L4 L6 L7 L8 BLF1049 R1 C10 C18 L14 L11 L10 C8 C13 L15 L16 C11 C12 C16 C14 L13 PHILIPS PHILIPS Input Rev C Output Rev C 60 60 40 40 MLE073 Dimensions in mm. The components are situated on one side of the copper-clad Rogers 6006 printed-circuit board (εr = 6.15); thickness = 25 mm. The other side is unetched and serves as a ground plane. Fig.15 Component layout for 860 to 900 MHz test circuit. 2003 May 14 8 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 List of components (see Figs 14 and 15) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C6, C13, C14, C15, C16, C17 multilayer ceramic chip capacitor; note 1 68 pF C2 multilayer ceramic chip capacitor; note 1 330 nF C3 multilayer ceramic chip capacitor; note 1 100 nF C4, C9, C10, C11, C12 tantalum capacitor 10 µF C5, C18 air trimmer capacitor 5 pF C7, C8 multilayer ceramic chip capacitor 8.2 pF R1 potentiometer 1 kΩ Q1 7808 voltage regulator Q2 BLF1049 LDMOS transistor L1 stripline; note 2 5.22 × 0.92 mm L2 stripline; note 2 6.47 × 0.92 mm L3 stripline; note 2 5.38 × 4.8 mm L4 stripline; note 2 2.4 × 0.92 mm L5 ferroxcube L6 stripline; note 2 9.73 × 0.92 mm L7 stripline; note 2 1.82 × 9.3 mm L8 stripline; note 2 8.15 × 17.9 mm L9 stripline; note 2 44 × 0.92 mm L10 stripline; note 2 18.45 × 28.3 mm L11 stripline; note 2 9.95 × 5.38 mm L12, L13 stripline; note 2 37.6 × 3.35 mm L14 stripline; note 2 2.36 × 0.92 mm L15, L16 stripline; note 2 4.22 × 0.92 mm Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad Rogers 6006 printed-circuit board (εr = 6.15); thickness = 0.64 mm. 2003 May 14 9 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A 2003 May 14 0.210 0.133 0.170 0.123 10 Philips Semiconductors Product specification Base station LDMOS transistor BLF1049 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 May 14 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp12 Date of release: 2003 May 14 Document order number: 9397 750 11123