AOSMD AON3816 20v n-channel mosfet Datasheet

AON3816
20V N-Channel MOSFET
General Description
Product Summary
The AON3816 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V while retaining a 12V
VGS(MAX) rating. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
VDS
ID (at VGS=4.5V)
20V
4A
RDS(ON) (at VGS = 4.5V)
< 22mΩ
RDS(ON) (at VGS = 4V)
< 23mΩ
RDS(ON) (at VGS = 2.5V)
< 28mΩ
ESD Protected
DFN 3x3
Top View
D2
D1
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2 G1
D1
D1
G2
S2
S1
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current F
VGS
TC=25°C
Pulsed Drain Current B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Rev 4: July 2010
Steady-State
Steady-State
A
2.5
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
V
40
PD
TC=70°C
±12
3.1
IDM
TC=25°C
Power Dissipation F
Units
V
4
ID
TC=70°C
Maximum
20
RθJA
RθJL
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-55 to 150
Typ
40
75
30
°C
Max
50
95
40
Units
°C/W
°C/W
°C/W
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AON3816
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±10V
VDS=VGS ID=250µA
0.3
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
VGS=4.5V, ID=4A
TJ=125°C
VGS=4V, ID=4A
VGS=2.5V, ID=4A
10
µA
0.7
1.1
V
18
22
23
29
19
23
mΩ
22.5
28
mΩ
A
gFS
Forward Transconductance
VDS=5V, ID=4A
33
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.6
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=4.5V, VDS=10V, ID=4A
S
1
V
3.5
A
1100
pF
920
110
155
200
pF
45
75
105
pF
2.4
kΩ
8.8
11
13
1.6
2
2.4
nC
1.9
3.2
4.5
nC
nC
µs
0.3
VGS=5V, VDS=10V, RL=2.5Ω,
RGEN=3Ω
mΩ
730
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
µA
5
Gate Threshold Voltage
Units
V
1
VGS(th)
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IGSS
RDS(ON)
Typ
0.6
µs
7.9
µs
4.4
µs
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F. The power dissipation and current rating is based on the t ≤ 10s thermal resistance, and current rating is also limited by wire-bonding.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: July 2010
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Page 2 of 5
AON3816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
10V
VDS=5V
3V
4V
15
20
ID(A)
ID (A)
30
2V
10
125°C
5
10
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Normalized On-Resistance
VGS=2.5V
25
RDS(ON) (mΩ
Ω)
1
1.5
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2.5
1.8
30
20
15
VGS=3.1V
10
VGS=4.5V
VGS=2.5V ID=4A
1.6
VGS=4V ID=4A
1.4
17
VGS=4.5V ID=4A
5
1.2
2
10
1
0.8
5
0
5
10
15
0
20
25
50
75
100
125
150
175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
40
1.0E+02
ID=4A
35
1.0E+01
40
1.0E+00
30
125°
25
IS (A)
RDS(ON) (mΩ
Ω)
0.5
20
1.0E-02
15
1.0E-03
10
125°
1.0E-01
25°
1.0E-04
25°
1.0E-05
5
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 4: July 2010
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AON3816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=10V
ID=4A
1200
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
1000
800
600
Coss
400
1
200
0
0
2
4
6
8
10
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
14
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
TJ(Max)=150°C
TA=25°C
10µs 10µs
RDS(ON)
10.0
Power (W)
100µs
1ms
10ms
1.0
80
17
5
2
10
40
0.1
TJ(Max)=150°C
TA=25°C
DC
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001 0.001
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
0.01
0.1
1
10
0
100
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
20
120
100.0
ID (Amps)
Crss
0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=95°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: July 2010
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Page 4 of 5
AON3816
AON3816
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 4: July 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5
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