Vishay HFA04SD60SPBF Hexfred ultrafast soft recovery diode, 4 a Datasheet

VS-HFA04SD60SPbF
www.vishay.com
Vishay Semiconductors
HEXFRED® Ultrafast Soft Recovery Diode, 4 A
FEATURES
2, 4
1
N/C
•
•
•
•
•
•
•
•
3
Anode
D-PAK (TO-252AA)
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Guaranteed avalanche
Specified at operating temperature
Compliant to RoHS Directive 2002/95/EC
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
BENEFITS
PRODUCT SUMMARY
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
Package
D-PAK (TO-252AA)
IF(AV)
4A
VR
600 V
VF at IF
1.8 V
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
trr typ.
17 ns
TJ max.
150 °C
Diode variation
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
600
V
Cathode to anode voltage
VRRM
Maximum continuous forward current
IF(AV)
Single pulse forward current
IFSM
Repetitive peak forward current
IFRM
TC = 116 °C
16
PD
TC = 100 °C
10
W
- 55 to 150
°C
Maximum power dissipation
Operating junction and storage temperatures
TC = 100 °C
4
A
25
TJ, TStg
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
See fig. 1
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 4 A
-
1.5
1.8
IF = 8 A
-
1.8
2.2
IR = 100 μA
IF = 4 A, TJ = 125 °C
-
1.4
1.7
VR = VR rated
-
0.17
3.0
TJ = 125 °C, VR = 0.8 x VR rated
-
44
300
UNITS
V
Maximum reverse
leakage current
IR
Junction capacitance
CT
VR = 200 V
-
4
8
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
Revision: 14-Jun-11
μA
Document Number: 94034
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SPbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
SYMBOL
trr
IRRM
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 200 A/μA, VR = 30 V
-
17
-
TJ = 25 °C
-
28
42
TJ = 125 °C
-
38
57
-
2.9
5.2
-
3.7
6.7
TJ = 25 °C
TJ = 125 °C
ns
A
-
40
60
TJ = 125 °C
-
70
105
TJ = 25 °C
-
280
-
TJ = 125 °C
-
235
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 55
-
150
°C
Thermal resistance,
junction to case
RthJC
-
-
5.0
Thermal resistance,
junction to ambient
RthJA
-
-
80
-
2.0
-
g
-
0.07
-
oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf  in)
Reverse recovery charge
Rate of fall of recovery current
Qrr
dI(rec)M/dt
TJ = 25 °C
IF = 4 A
dIF/dt = 200 A/μs
VR = 200 V
UNITS
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
SYMBOL
TEST CONDITIONS
°C/W
Typical socket mount
Weight
Mounting torque
Marking device
Revision: 14-Jun-11
Case style D-PAK
HFA04SD60S
Document Number: 94034
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SPbF
Vishay Semiconductors
100
1000
IR - Reverse Current (µA)
IF - Instantaneous Forward Current (A)
www.vishay.com
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
TJ = 150 °C
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
0.001
0
2
1
3
4
5
0
6
100
200
300
400
500
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
1
1
10
100
1000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
PDM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
t1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.0001
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 14-Jun-11
Document Number: 94034
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SPbF
www.vishay.com
Vishay Semiconductors
50
200
180
IF = 8 A
IF = 4 A
160
40
trr (ns)
Qrr (nC)
140
30
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 8 A
IF = 4 A
120
100
80
60
VR = 200 V
TJ = 125 °C
TJ = 25 °C
40
20
100
20
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
14
1000
IF = 8 A
IF = 4 A
12
IF = 8 A
IF = 4 A
dI(rec)M/dt (A/µs)
10
IRR (A)
1000
8
6
4
VR = 200 V
TJ = 125 °C
TJ = 25 °C
VR = 200 V
TJ = 125 °C
TJ = 25 °C
2
0
100
1000
100
100
1000
dIF/dt (A/µs)
dIF/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
Revision: 14-Jun-11
Document Number: 94034
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SPbF
www.vishay.com
Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 14-Jun-11
Document Number: 94034
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-HFA04SD60SPbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
HF
A
04
SD
60
S
TR
PbF
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
HEXFRED® family
3
-
Electron irradiated
4
-
Current rating (04 = 4 A)
5
-
D-PAK
6
-
Voltage rating (60 = 600 V)
7
-
S = D-PAK
8
-
TR = Tape and reel
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
9
-
PbF = Lead (Pb)-free
P = Lead (Pb)-free (for TRR and TRL)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95016
Part marking information
www.vishay.com/doc?95059
Packaging information
www.vishay.com/doc?95033
Revision: 14-Jun-11
Document Number: 94034
6
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5)
A
E
b3
Pad layout
C
A
(3)
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
0.245
MIN.
(6.23)
D1
L4
3
3
(2) L5
2
b
1
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
2x e
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
MILLIMETERS
MIN.
0.488 (12.40)
0.409 (10.40)
0.089
MIN.
(2.28)
Detail “C”
SYMBOL
0.265
MIN.
(6.74)
E1
INCHES
MAX.
MIN.
MAX.
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
3
2.29 BSC
INCHES
MIN.
2.74 BSC
L2
0.51 BSC
NOTES
0.090 BSC
0.108 REF.
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.020 BSC
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension uncontrolled in L5
(3)
Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4)
Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5)
Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6)
Dimension b1 and c1 applied to base metal only
(7)
Datum A and B to be determined at datum plane H
(8)
Outline conforms to JEDEC outline TO-252AA
Document Number: 95016
Revision: 04-Nov-08
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
Similar pages