Mitsubishi M54567FP 4-unit 1.5a darlington transistor array with clamp diode Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely
low input-current supply.
PIN CONFIGURATION
VCC
OUTPUT1
1
15 →O4 OUTPUT4
14 ←IN4 INPUT4
INPUT1 IN1→ 3
 4
GND 
 5
13 
 GND
12 
11 ←IN3 INPUT3
INPUT2 IN2→ 6
FEATURES
Á High breakdown voltage (BV CEO ≥ 50V)
Á High-current driving (Ic(max) = 1.5A)
Á With clamping diodes
Á Driving available with NMOS IC output
Á Wide operating temperature range (Ta = –20 to +75°C)
OUTPUT2
10 →O3 OUTPUT3
O2← 7
VCC
COM COMMON
16
O1← 2
8
9
COM COMMON
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and power amplification
VCC
COM
22K
INPUT
8K
OUTPUT
2K
5.5K
FUNCTION
The M54567P and M54567FP each have four circuits, which
are made of PNP transistors and NPN Darlington transistors.
The input has 8kΩ, and a spike-killer clamping diode is provided between the output pin (collector) and COM pin. All
output transistor emitters are connected to the GND pin.
Collector current is 1.5A maximum. The maximum collectoremitter voltage is 50V.
The M54567FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VCEO
The four circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Parameter
IC
Collector-emitter voltage
Collector current
VI
VR
Input voltage
Clamping diode reverse voltage
IF
Clamping diode forward current
Pd
Topr
Power dissipation
Tstg
GND
Conditions
Supply voltage
Operating temperature
Storage temperature
3K
Output, H
Current per circuit output, L
Ratings
10
Unit
V
–0.5 ~ +50
1.5
V
A
–0.5 ~ +30
V
V
Pulse Width ≤ 10ms, Duty Cycle ≤ 5%
50
1.5
Pulse Width ≤ 100ms, Duty Cycle ≤ 5%
Ta = 25°C, when mounted on board
1.0
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
A
W
°C
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
(Unless otherwise noted, Ta = –20 ~ +75°C)
Parameter
Limits
typ
min
max
Unit
VCC
Supply voltage
4
5
6
VO
Output voltage
Collector current
(Current per 1 circuit when 4 circuits
are coming on simultaneously)
0
—
50
0
—
1.25
0
—
0.7
VCC –0.5
—
—
VCC
V
VCC–3.5
V
IC
VIH
VIL
VCC = 5V, Duty Cycle
P : no more than 4%
FP : no more than 2%
VCC = 5V, Duty Cycle
P : no more than 18%
FP : no more than 9%
“H” input voltage
“L” input voltage
A
0
ELECTRICAL CHARACTERISTICS
V
V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
V (BR) CEO
ICC
Collector-emitter breakdown voltage
Supply current (One circuit coming on)
VCE (sat)
Collector-emitter saturation voltage
II
Input current
IR
Clamping diode reverse current
VF
h FE
Clamping diode forward voltage
DC amplification factor
Limits
Test conditions
min
50
ICEO = 100µA
VCC = 6V, V I = 0.5V
VCC = 4V, V I = 0.5V, IC = 1.25A
VCC = 4V, VI = 0.5V, IC = 0.7A
VI = VCC –3.5V
typ+
—
V
—
3.0
4.5
mA
—
—
1.6
1.1
2.2
1.7
V
—
–0.3
–0.6
VI = VCC –6V
—
VR = 50V
IF = 1.25A, VCC open
—
—
–0.58
—
–0.95
100
1.6
2.3
VCC = 4V, V CE = 4V, IC = 1A, Ta = 25°C
Unit
max
—
4000
30000
mA
µA
V
—
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
min
CL = 15pF (note 1)
NOTE 1 TEST CIRCUIT
INPUT
Limits
Test conditions
Unit
typ
max
—
190
—
ns
—
5300
—
ns
TIMING DIAGRAM
VCC
VO
Measured device
INPUT
50%
50%
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 0.5 to 4V
(2) Input-output conditions : RL = 8.3Ω, VO = 10V, VCC = 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
1.6
2.0
VCC = 4V
VI = 0.5V
Collector current Ic (A)
Power dissipation Pd (W)
M54567P
1.5
M54567FP
1.0
0.5
0
25
50
75
Ta = 25°C
0.4
0
100
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
20
40
60
➁
➂
➃
2.0
80
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated
circuit.
•VCC = 5V
•Ta = 75°C
1.5
1.0
➀
0.5
➁
➂
➃
•VCC = 5V
•Ta = 25°C
0
100
0
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M54567FP)
Duty-Cycle-Collector Characteristics
(M54567FP)
1.0
➀
0.5
➁
➂
➃
20
40
60
Duty cycle (%)
80
100
Collector current Ic (A)
1.5
100
2.0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated
circuit.
•VCC = 5V
•Ta = 25°C
0
Collector current Ic (A)
➀
2.0
0
1.5
Duty-Cycle-Collector Characteristics
(M54567P)
2.0
0
1.0
Duty-Cycle-Collector Characteristics
(M54567P)
1.0
0
0.5
Output saturation voltage VCE (sat) (V)
1.5
0.5
0
Ta = –20°C
Ambient temperature Ta (°C)
2.0
Collector current Ic (A)
0.8
Ta = 75°C
0
Collector current Ic (A)
1.2
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated
circuit.
•VCC = 5V
•Ta = 75°C
1.5
1.0
0.5
0
➀
0
20
40
60
80
➁
➂
➃
100
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54567P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DC Amplification Factor
Collector Current Characteristics
Grounded Emitter Transfer Characteristics
1.6
VCC = 4V
VCE = 4V
7
5
3
2
Ta = 75°C
Collector current Ic (A)
DC amplification factor hFE
105
104
7
5
Ta = 25°C
3
2
Ta = –20°C
103
7
5
3
2
VCC = 4V
VCE = 4V
1.2
0.8
Ta = 75°C
Ta = 25°C
0.4
Ta = –20°C
102 1
10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
0
Collector current Ic (mA)
0
1.5
2.0
Clamping Diode Characteristics
2.0
Forward bias current IF (A)
VCC = 5V
–0.8
Input current II (mA)
1.0
Supply voltage-Input voltage VCC–VI (V)
Input Characteristics
–1.0
0.5
–0.6
Ta = 25°C
Ta = –20°C
–0.4
–0.2
Ta = 75°C
1.5
1.0
0.5
Ta = –20°C
Ta = 75°C
Ta = 25°C
0
0
1
2
3
4
5
Supply voltage-Input voltage VCC–VI (V)
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Supply Current Characteristics
Supply current Icc (mA)
10.0
VI = 0.5V
8.0
6.0
Ta = 25°C
Ta = –20°C
4.0
Ta = 75°C
2.0
0
0
2
4
6
8
10
Supply voltage VCC (V)
Aug. 1999
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