INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Preliminary specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1998 Jan 23 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier (PA) overall efficiency 52% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. • 35.5 dB gain • 0 dBm input power The PA requires only a 30 dB harmonic low-pass filter to comply with the GSM transmit spurious specification. It can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages. • Gain control range >55 dB • Low output noise floor of PA < −130 dBm/Hz in GSM RX band • Wide operating temperature range −20 to +85 °C • LQFP 48 pin package • Compatible with power ramping controller PCF5077 • Compatible with GSM RF transceiver SA1620. APPLICATIONS • 880 to 915 MHz hand-held transceivers for E-GSM applications • 900 MHz Time Division Multiple Access (TDMA) systems. QUICK REFERENCE DATA PARAMETER (1) SYMBOL MIN. TYP. MAX. UNIT VDD positive supply voltage − 3.6 − V IDD positive peak supply current − 2.4 − A Po(max) maximum output power − 35.5 − dBm Tamb operating ambient temperature −20 − +85 οC Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION TYPE NUMBER CGY2013G 1998 Jan 23 PACKAGE NAME DESCRIPTION VERSION LQFP48 plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm SOT313-2 2 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G BLOCK DIAGRAM VDD1 handbook, full pagewidth 29 VDD2 VDD3 33 42 18 DETO/VDD5 SENSOR DRIVER RFI 27 5,6,7,8 RFO/VDD4 CGY2013G (1) 31 19 VGG1 VGG2 GND MGD627 (1) Ground pins 1 to 4, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48. Fig.1 Block diagram. PINNING SYMBOL PIN DESCRIPTION GND 1 to 4 ground RFO/VDD4 5 to 8 power amplifier output and fourth stage supply voltage GND 9 to 17 ground DETO/VDD5 18 power sensor output and supply voltage VGG2 19 fourth stage negative gate supply voltage GND 20 to 26 ground RFI 27 power amplifier input GND 28 ground VDD1 29 first stage supply voltage GND 30 ground VGG1 31 first three stages negative gate supply voltage GND 32 ground VDD2 33 second stage supply voltage GND 34 to 41 VDD3 42 GND 43 to 48 1998 Jan 23 ground third stage supply voltage ground 3 Philips Semiconductors Preliminary specification 37 GND 38 GND 39 GND 40 GND 41 GND 42 VDD3 43 GND 44 GND 45 GND 46 GND 48 GND handbook, full pagewidth CGY2013G 47 GND GSM 4 W power amplifier GND 1 36 GND GND 2 35 GND GND 3 34 GND GND 4 33 VDD2 RFO/VDD4 5 32 GND RFO/VDD4 6 RFO/VDD4 7 RFO/VDD4 8 29 VDD1 GND 9 28 GND 31 VGG1 CGY2013G 30 GND 24 GND 23 GND GND 21 GND 22 GND 20 VGG2 19 DETO/VDD5 18 25 GND GND 16 GND 12 GND 17 26 GND GND 15 GND 11 GND 13 27 RFI GND 14 GND 10 MGD628 Fig.2 Pin configuration. FUNCTIONAL DESCRIPTION Power amplifier Operating conditions The power amplifier consists of four cascaded gain stages with an open-drain configuration. Each drain has to be loaded externally by an adequate reactive circuit which also has to be a DC path to the supply. The CGY2013G is designed to meet the European Telecommunications Standards Institute (ETSI) GSM documents, the “ETS 300 577 specification”, which are defined as follows: The amplifier bias is set using a negative voltage applied at pins VGG1 and VGG2. This negative voltage must be present before the supply voltage is applied to the drains to avoid current overstress for the amplifier. • ton = 542.8 µs • T = 4.3 ms • Duty cycle = 1/8. The device is specifically designed for pulse operation allowing the use of a LQFP48 plastic package. 1998 Jan 23 4 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied. SYMBOL PARAMETER MIN. MAX. UNIT VDD positive supply voltage − 7 V VGG negative supply voltage − −10 V Tj(max) maximum operating junction temperature − 150 °C Tstg IC storage temperature − 150 °C Ptot total power dissipation − 1.5 W THERMAL CHARACTERISTICS General operating conditions applied. SYMBOL Rth j-c PARAMETER VALUE UNIT 25 K/W thermal resistance from junction to case; note 1 Note 1. This thermal resistance is measured under GSM pulse conditions. DC CHARACTERISTICS VDD = 3.6 V; Tamb = 25 °C; general operating conditions applied; peak current values during burst; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5 VDD positive supply voltage 0 3.6 5.5 V IDD positive peak supply current − 2.4 3.0 A Pins VGG1 and VGG2 VGG1 negative supply voltage note 1 − −1.8 − V VGG2 negative supply voltage note 1 − −1.8 − V IGG1 + IGG2 negative peak supply current − 2.5 5 mA Note 1. The negative bias VGG1 and VGG2 must be applied 10 µs before the power amplifier is switched on, and must remain applied until the power amplifier has been switched off. 1998 Jan 23 5 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G AC CHARACTERISTICS VDD = 3.6 V; Tamb = 25 °C; VGG1 = VGG2 = −1.8 V; measured on Philips demoboard. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Power amplifier Pi input power fRF RF frequency range Po(max) maximum output power −2 − +2 dBm 880 − 915 MHz Tamb = 25 °C; VDD = 3.6 V 33.5 35.5 − dBm Tamb = −20 to +85 °C; VDD = 3 V 32 − − dBm η efficiency VDD = 3.6 V 42 52 − % Po(min) minimum output power VDD < 0.1 V − −20 −15 dBm NRX output noise in RX band fRF = 925 to 935 MHz at Po(max) − − −117 dBm/Hz fRF = 935 to 960 MHz at Po(max) − − −125 dBm/Hz H2 2nd harmonic level − − −35 dBc H3 3rd harmonic level − − −35 dBc Stab stability − − −70 dBc note 1 Note 1. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1 load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 second period. 1998 Jan 23 6 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G APPLICATION INFORMATION VDD Vbat handbook, full pagewidth 1.5 kΩ 150 pF 100 pF 150 pF PHP212L BSR14 39 pF Vcontrol 470 Ω 27 Ω 10 nF 47 Ω 39 pF 270 Ω 3.3 nH 18 nH 18 nH 39 pF 100 pF output 2.7 pF 1.8 pF 8.2 nH CGY2013 12 pF 10 nH CMS TDK input 22 nH 100 Ω 1.8 pF 47 Ω VGG 39 pF MGD629 All SMD size components are 0603. Fig.3 Evaluation board schematic (FR4, 0.8 mm). 1998 Jan 23 7 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G PACKAGE OUTLINE LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm SOT313-2 c y X 36 25 A 37 24 ZE e E HE A A2 (A 3) A1 w M pin 1 index θ bp Lp L 13 48 detail X 12 1 ZD e v M A w M bp D B HD v M B 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HD HE L Lp v w y mm 1.60 0.20 0.05 1.45 1.35 0.25 0.27 0.17 0.18 0.12 7.1 6.9 7.1 6.9 0.5 9.15 8.85 9.15 8.85 1.0 0.75 0.45 0.2 0.12 0.1 Z D (1) Z E (1) θ 0.95 0.55 7 0o 0.95 0.55 o Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 94-12-19 97-08-01 SOT313-2 1998 Jan 23 EUROPEAN PROJECTION 8 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Reflow soldering Reflow soldering techniques are suitable for all LQFP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. If wave soldering cannot be avoided, the following conditions must be observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The footprint must be at an angle of 45° to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1). 1998 Jan 23 9 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jan 23 10 Philips Semiconductors Preliminary specification GSM 4 W power amplifier CGY2013G NOTES 1998 Jan 23 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. +380 44 476 0297/1642, Fax. +380 44 476 6991 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 708 296 8556 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 825 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com/ps/ (1) CGY2013G_N_2 June 26, 1996 11:51 am © Philips Electronics N.V. 1996 SCA50 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 437027/1200/02/pp12 Date of release: 1998 Jan 23 Document order number: 9397 750 03166