Hanbit HMS51232M4G-12 Sram module 2mbyte (512k x 32-bit), 72pin simm, 5v Datasheet

HANBit
HMS51232M4G
SRAM MODULE 2Mbyte (512K x 32-Bit), 72PIN SIMM, 5V
Part No.
HMS51232M4G
GENERAL DESCRIPTION
The HMS51232M4GG is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit
configuration. The module consists of four 512K x 8 SRAMs mounted on a 72-pin, single-sided, FR4-printed circuit board.
PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable
inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable(/OE) and write enable(/WE)
can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished
when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V
DC power supply and all inputs and outputs are fully TTL-compatible.
PIN ASSIGNMENT
FEATURES
PIN
SYMBOL
PIN
SYMBOL
PIN
SYMBOL
1
NC
25
DQ13
49
DQ27
2
NC
26
DQ5
50
DQ19
3
PD2
27
DQ14
51
A3
4
PD3
28
DQ6
52
A10
w Easy memory expansion /CE and /OE functions
5
Vss
29
DQ15
53
A4
w All inputs and outputs are TTL-compatible
6
PD0
30
DQ7
54
A11
w Industry-standard pinout
7
PD1
31
Vss
55
A5
w FR4-PCB design
8
DQ0
32
/WE
56
A12
w Part Identification
9
DQ8
33
A15
57
Vcc
10
DQ1
34
A14
58
A13
11
DQ9
35
/CE2
59
A6
12
DQ2
36
/CE1
60
DQ20
13
DQ10
37
/CE4
61
DQ28
14
DQ3
38
/CE3
62
DQ21
15
DQ11
39
A17
63
DQ29
16
Vcc
40
A16
64
DQ22
17
A0
41
/OE
65
DQ30
w Access times : 10, 12, 15, 17 and 20
w High-density 2Mbyte design
w High-reliability, high-speed design
w Single + 5V ±0.5V power supply
- HMS51232M4G : SIMM design
OPTIONS
MARKING
w Timing
10ns access
-10
12ns access
-12
15ns access
-15
18
A7
42
Vss
66
DQ23
17ns access
-17
19
A1
43
DQ24
67
DQ31
20ns access
-20
20
A8
44
DQ16
68
Vss
21
A2
45
DQ25
69
A18
22
A9
46
DQ17
70
NC
23
DQ12
47
DQ26
71
NC
24
DQ4
48
DQ18
72
NC
w Packages
72-pin SIMM
M
PD0 = Open
PD1 = Open
PD2 = Vss
PD3 = Open
72-Pin SIMM
TOP VIEW
1
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4G
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A0 - A18
32
19
A0-18
/WE
DQ 0-7
U1
/OE
/CE
/CE1
A0-18
/WE
DQ 8-15
U2
/OE
/CE
/CE2
A0-18
/WE
DQ16-23
U3
/OE
/CE
/CE3
A0-18
/WE
/WE
/OE
/OE
DQ24-31
U4
/CE
PD0 = Open
/CE4
PD1 = Open
PD2 = Vss
PD3 = Open
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
H
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE
X
L
L
Din
ACTIVE
2
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to +7.0V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to +7.0V
Power Dissipation
PD
4W
TSTG
-65oC to +150oC
Voltage on Any Pin Relative to Vss
Storage Temperature
Operating Temperature
TA
0oC to +70oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
( TA=0 to 70 o C )
SYMBOL
MIN
TYP.
MAX
Supply Voltage
VCC
4.5V
5.0V
5.5V
Ground
VSS
0
0
0
Input High Voltage
VIH
2.2
-
Vcc+0.5V**
Input Low Voltage
VIL
-0.5*
-
0.8V
PARAMETER
* VIL(Min.) = -2.0V (Pulse Width £ 10ns) for I £ 20 mA
** VIH(Max.) = Vcc+2.0V (Pulse Width £ 10ns) for I £ 20 mA
DC AND OPERATING CHARACTERISTICS (1)(0oC £ TA £ 70 oC ; Vcc = 5V ± 0.5V )
TEST CONDITIONS
PARAMETER
Input Leakage Current
Output Leakage Current
VIN = Vss to Vcc
/CE=VIH or /OE =VIH or /WE=VIL
VOUT=Vss to VCC
SYMBOL
MIN
MAX
UNITS
ILI
-2
2
mA
IL0
-2
2
mA
2.4
-
V
0.4
V
Output High Voltage
VOH = -4.0mA
VOH
Output Low Voltage
VOL = 8.0mA
VOL
* Vcc=5.0V, Temp=25 oC
DC AND OPERATING CHARACTERISTICS (2)
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current: Standby
TEST CONDITIONS
SYMBOL
MAX
-15
-17
-20
UNIT
Min. Cycle, 100% Duty
/CE=VIL, VIN=VIH or VIL,
IOUT=0mA
lCC
170
165
160
mA
Min. Cycle, /CE=VIH
lSB
50
50
50
mA
f=0MHZ, /CE³VCC-0.2V,
VIN³ VCC-0.2V or VIN£0.2V
lSB1
10
10
10
mA
3
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4G
CAPACITANCE
DESCRIPTION
TEST CONDITIONS
SYMBOL
MAX
UNIT
VI/O=0V
CI/O
8
pF
CIN
7
pF
Input /Output Capacitance
Input Capacitance
VIN=0V
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS (0oC £ TA £ 70 oC ; Vcc = 5V ± 0.5V, unless otherwise specified)
TEST CONDITIONS
PARAMETER
VALUE
Input Pulse Level
0.V to 3V
Input Rise and Fall Time
3ns
Input and Output Timing Reference Levels
1.5V
Output Load
See below
Output Load (A)
Output Load (B)
for t HZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5V
+5V
480W
DOUT
255W
480W
DOUT
30pF*
255W
5pF*
* Including scope and jig capacitance
READ CYCLE
PARAMETER
-15
-17
-20
SYMBOL
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
Read Cycle Time
tRC
15
-
17
-
20
-
ns
Address Access Time
tAA
-
15
-
17
-
20
ns
Chip Select to Output
tCO
-
15
-
17
-
20
ns
Output Enable to Output
tOE
-
7
-
8
-
9
ns
Output Enable to Low-Z Output
tOLZ
0
-
0
-
0
-
ns
Chip Enable to Low-Z Output
tLZ
3
-
3
-
3
-
ns
Output Disable to High-Z Output
tOHZ
0
7
0
8
0
9
ns
Chip Disable to High-Z Output
tHZ
0
7
0
8
0
9
ns
Output Hold from Address Change
tOH
3
-
3
-
3
-
ns
Chip Select to Power Up Time
tPU
0
-
0
-
0
-
ns
Chip Select to Power Down Time
tPD
-
15
-
17
-
20
ns
4
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4G
WRITE CYCLE
PARAMETER
SYMBOL
-15
-17
-20
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
Write Cycle Time
tWC
15
-
17
-
20
-
ns
Chip Select to End of Write
tCW
12
-
13
-
14
-
ns
Address Set-up Time
tAS
0
-
0
-
0
-
ns
Address Valid to End of Write
tAW
12
-
13
-
14
-
ns
Write Pulse Width (/OE=High)
tWP
12
-
13
-
14
-
ns
Write Recovery Time (/OE=Low)
tWR
0
-
0
-
0
-
ns
Write to Output High-Z
tWZ
0
7
0
8
0
9
ns
Data to Write Time Overlap
tDW
8
-
9
-
10
-
ns
Data Hold from Write Time
tDH
0
-
0
-
0
-
ns
End of Write to Output Low-Z
tOW
3
-
3
-
3
-
ns
TIMING DIAGRAMS
Please refer to timing diagram chart.
FUNCTIONAL DESCRIPTION
/CE
/WE
/OE
MODE
I/O PIN
SUPPLY CURRENT
H
X*
X
Not Select
High-Z
I SB, I SB1
L
H
H
Output Disable
High-Z
ICC
L
H
L
Read
DOUT
ICC
L
L
X
Write
DIN
ICC
Note: X means Don't Care
5
HANBit Electronics Co.,Ltd.
HANBit
HMS51232M4G
PACKAGING INFORMATION
SIMM Design
2.54 mm
MIN
0.25 mm MAX
1.27
1.27±0.08mm
Gold: 1.04±0.10 mm
Solder: 0.914±0.10 mm
(Solder & Gold Plating Lead)
ORDERING INFORMATION
Part Number
Density
Org.
Package
Component
Number
Vcc
Speed
HMS 51232M4G-10
2MByte
512K x 32bit
72 Pin-SIMM
4EA
5V
10ns
HMS 51232M4G-12
2MByte
512K x 32bit
72 Pin-SIMM
4EA
5V
12ns
HMS 51232M4G-15
2MByte
512K x 32bit
72 Pin-SIMM
4EA
5V
15ns
HMS 51232M4G-17
2MByte
512K x 32bit
72 Pin-SIMM
4EA
5V
17ns
HMS 51232M4G-20
2MByte
512K x 32bit
72 Pin-SIMM
4EA
5V
20ns
6
HANBit Electronics Co.,Ltd.
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