Microsemi APTGF90A60T3AG Phase leg npt igbt power module power module Datasheet

APTGF90A60T3AG
Phase leg
NPT IGBT Power Module
Power Module
29
30
31
32
VCES = 600V
IC = 90A @ Tc = 100°C
Application
13
•
•
•
•
4
3
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
26
27
28
22
23
25
R1
•
8
7
16
28 27 26 25
18
19
20
14
•
•
•
•
•
20 19 18
23 22
29
16
30
15
31
14
32
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
13
2
3
4
7
8
10 11 12
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
•
•
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Absolute maximum ratings
ICM
VGE
PD
RBSOA
TC = 25°C
Continuous Collector Current
TC = 100°C
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 25°C
TJ = 150°C
Max ratings
600
130
90
200
±20
520
200A @ 480V
Unit
V
May, 2009
IC
Parameter
Collector - Emitter Breakdown Voltage
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
APTGF90A60T3AG – Rev 0
Symbol
VCES
APTGF90A60T3AG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 100A
Tj = 125°C
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
Typ
4.5
2
2.2
5.5
Min
Typ
Max
Unit
250
2.5
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Test Conditions
VGE = 0V ; VCE = 25V
f = 1MHz
VGE= 15V ; VCE=300V
IC=100A
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2Ω
VGE = ±15V
Tj = 125°C
VBus = 300V
IC = 100A
Tj = 125°C
RG = 2.2Ω
VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
4.3
0.4
nF
240
nC
25
10
130
ns
20
25
11
150
ns
30
1
mJ
3
450
A
Reverse diode ratings and characteristics
IRM
Min
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
600
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
VR=600V
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 400V
di/dt =400A/µs
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V
Tj = 25°C
Tj = 125°C
35
600
Tj = 125°C
60
1.8
2.2
1.5
Tj = 25°C
25
Tj = 125°C
Tj = 25°C
160
70
Tj = 125°C
960
Tc = 100°C
Unit
µA
A
2.2
V
May, 2009
VRRM
Test Conditions
ns
nC
2–5
APTGF90A60T3AG – Rev 0
Symbol Characteristic
APTGF90A60T3AG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
2.5
Max
0.24
0.52
Unit
°C/W
V
150
125
100
4.7
110
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎝ T25 T ⎠⎦
⎣
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3–5
APTGF90A60T3AG – Rev 0
28
17
1
May, 2009
SP3 Package outline (dimensions in mm)
APTGF90A60T3AG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
200
200
150
TJ=125°C
120
IC (A)
IC (A)
160
TJ = 125°C
175
TJ=25°C
VGE=15V
VGE=20V
VGE=12V
125
100
80
75
VGE=9V
50
40
25
0
0
0
0.5
1
1.5
2
VCE (V)
2.5
3
3.5
0
5
VCE = 300V
VGE = 15V
RG = 2.2 Ω
TJ = 125°C
175
4
150
E (mJ)
IC (A)
125
100
75
TJ=125°C
50
3
VCE (V)
4
5
3
Eoff
2
Eon
1
TJ=25°C
25
2
Energy losses vs Collector Current
Transfert Characteristics
200
1
0
0
5
6
7
8
9
10
11
0
12
25
50
75
100 125 150 175 200
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
3.5
Reverse Safe Operating Area
250
Eoff
3
200
2
IC (A)
E (mJ)
2.5
1.5
150
100
1
Eon
0.5
VGE=15V
TJ=125°C
RG=2.2 Ω
50
VCE = 300V ; VGE =15V
IC = 100A ; TJ = 125°C
0
0
0
2
4
6
8
Gate Resistance (ohms)
10
0
100
200
300
400
500
600
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.15
0.1
0.05
IGBT
0.7
May, 2009
0.2
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
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1
10
4–5
APTGF90A60T3AG – Rev 0
Thermal Impedance (°C/W)
0.25
APTGF90A60T3AG
ZCS
200
150
VCE=300V
D=50%
RG=2.2Ω
TJ=125°C
TC=75°C
150
ZVS
100
hard
switching
50
TJ=125°C
100
TJ=25°C
50
0
0
0
25
50
75
IC (A)
100
125
150
0
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.6
Diode
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
Single Pulse
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
May, 2009
0.1
0.05
0
0.00001
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5–5
APTGF90A60T3AG – Rev 0
Thermal Impedance (°C/W)
Forward Characteristic of diode
200
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
250
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