DISCRETE SEMICONDUCTORS DATA SHEET MX1011B700Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 µs/10% • Internal input and output prematching networks allow an easier design of circuits • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very good stability of the characteristics and excellent lifetime MX1011B700Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION CONDITIONS tp = 10 µs; δ = 1% Class C f (GHz) VCC (V) 1.09 50 PL (W) 650 GP (dB) ≥6 ηC (%) ≥48 PINNING - SOT439A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange • Multicell geometry improves power sharing and reduces thermal resistance. APPLICATIONS 1 handbook, 4 columns Intended for use in common base, class C, broadband, pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within the 1030 to 1150 MHz band. c b 3 3 e 2 MAM045 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor MX1011B700Y LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCEO collector-emitter voltage open base − 15 V VCES collector-emitter voltage RBE = 0 Ω − 65 V VEBO emitter-base voltage open collector − 3 V ICM peak collector current tp ≤ 10 µs; δ ≤ 1% − 40 A Ptot total power dissipation Tmb < 75 °C; tp ≤ 10 µs; δ ≤ 1% − 1365 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MRA445 1600 handbook, halfpage Ptot (W) 1200 800 400 0 −50 0 50 100 150 200 Tmb (oC) tp = 10 µs; δ = 1%; Ptot max = 1365 W. Fig.2 Maximum power dissipation derating as a function of mounting base temperature. 1997 Feb 18 3 Philips Semiconductors Product specification NPN microwave power transistor MX1011B700Y THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 120 °C 1.12 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.2 K/W Zth j-h thermal impedance from junction to heatsink tp = 10 µs; δ = 1%; notes 1 and 2 0.06 K/W MAX. UNIT Notes 1. See “Mounting recommendations in the General part of handbook SC19a”. 2. Equivalent thermal impedance under nominal pulse microwave operating conditions. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS ICBO collector cut-off current VCB = 50 V; IE = 0 20 mA ICES collector cut-off current VCE = 50 V; VBE = 0 20 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 5 mA V(BR)CBO collector-base breakdown voltage IC = 140 mA; VBE = 0 65 V V(BR)CES collector-emitter breakdown voltage IC = 140 mA; VBE = 0 65 V APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a broadband test circuit as shown in Fig.3. MODE OF OPERATION Class C 1997 Feb 18 f (GHz) CONDITIONS VCC (V) PL (W) GP (dB) ηC (%) tp = 10 µs; δ = 1% 1.09 50 650; typ. 740 ≥6.0; typ. 7 ≥48; typ. 55 tp = 0.5 µs; δ = 50%; tp = 112 µs; δ = 1% 1.03 to 1.09 50 typ. 650 typ. 6.4 typ. 45 tp = 6.6 µs; δ = 51%; tp = 3.3 ms; δ = 43% 1.03 to 1.15 50 typ. 300 typ. 7 typ. 45 tp = 32 µs; δ = 1% 1.09 50 typ. 700 typ. 6.7 typ. 55 4 Philips Semiconductors Product specification NPN microwave power transistor MX1011B700Y 30 mm handbook, full pagewidth 17 30 mm 3 3 8 7 1 4 3 12 13 40 mm 2.5 1 10.5 40 mm 5 11 0.65 0.65 MCD495 handbook, full pagewidth C3 VCC C4 VCC C2 input L1 output L3 C1 L2 C5 MCD496 Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.3 Broadband test circuit. 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor MX1011B700Y List of components (see Fig.3) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. L1, L2 0.65 mm diameter copper wire − total length = 26 mm; height of loop = 10 mm − L3 0.85 mm diameter silver wire − total length = 30 mm; height of loop = 15 mm − C1 capacitor 100 pF − ATC, ref.100A101KP50X C2 tantalum capacitor 10 µF; 50 V − − C3 electrolytic capacitor 1000 µF; 63 V − − C4 feedthrough bypass capacitor − Erie, ref.1250-003 C5 variable gigatrim capacitor − Tekelec, ref.729.1 0.8 − 8 pF MRA443 handbook, halfpage ηC (%) PL (W) 700 60 600 55 500 50 400 70 90 110 130 45 70 150 170 PIN (W) 90 110 130 PIN (W) 150 Class C pulse operation; tp = 10 µs; δ = 1%; VCC = 50 V; f = 1.09 GHz; (In broadband test circuit as shown in Fig.3). Class C pulse operation; tp = 10 µs; δ = 1%; VCC = 50 V; f = 1.09 GHz; (In broadband test circuit as shown in Fig.3). Fig.5 Fig.4 Load power as a function of input power. 1997 Feb 18 MRA444 65 handbook,800 halfpage 6 Collector efficiency as a function of input power. Philips Semiconductors Product specification NPN microwave power transistor MX1011B700Y 1 handbook, full pagewidth 0.5 2 1 GHz 0.2 5 Zi 10 1.15 GHz +j 0 0.2 0.5 1 2 5 10 ∞ –j –10 –5 –0.2 –2 –0.5 –1 MCD493 VCC = 50 V; ZO = 10 Ω; Po = 740 W. Fig.6 Input impedance as a function of frequency, associated with optimum load impedance. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 0.2 1.15 GHz –0.2 0.5 1 2 5 ZL 10 ∞ –10 1 GHz –5 –2 –0.5 –1 MCD494 VCC = 50 V; ZO = 10 Ω; Po = 740 W. Fig.7 Optimum load impedance as a function of frequency; associated with input impedance. 1997 Feb 18 7 Philips Semiconductors Product specification NPN microwave power transistor MX1011B700Y PACKAGE OUTLINE 12.85 max handbook, full pagewidth 0.15 max 6 max 3.3 2.9 1.6 max 3 23 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 2.7 min 2 MBC881 8.25 16.5 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. Fig.8 SOT439A. 1997 Feb 18 8 10.3 10.0 Philips Semiconductors Product specification NPN microwave power transistor MX1011B700Y DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 9 Philips Semiconductors Product specification NPN microwave power transistor MX1011B700Y NOTES 1997 Feb 18 10 Philips Semiconductors Product specification NPN microwave power transistor MX1011B700Y NOTES 1997 Feb 18 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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