IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • - 250 RDS(on) (Ω) VGS = - 10 V 3.0 Qg (Max.) (nC) 14 Qgs (nC) 3.1 Qgd (nC) 6.8 Configuration Single P-Channel Surface Mount (IRFR9214/SiHFR9214) Straight Lead (IRFU9214/SiHFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead (Pb)-free Available Available RoHS* COMPLIANT S DESCRIPTION DPAK (TO-252) IPAK (TO-251) Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. G D P-Channel MOSFET ORDERING INFORMATION Package DPAK (TO-252) IRFR9214PbF SiHFR9214-E3 IRFR9214 SiHFR9214 Lead (Pb)-free SnPb DPAK (TO-252) IRFR9214TRLPbFa SiHFR9214TL-E3a IRFR9214TRLa SiHFR9214TLa DPAK (TO-252) IRFR9214TRPbFa SiHFR9214T-E3a IRFR9214TRa SiHFR9214Ta IPAK (TO-251) IRFU9214PbF SiHFU9214-E3 IRFU9214 SiHFU9214 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 250 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor UNIT V - 2.7 - 1.7 A - 11 0.40 W/°C EAS 100 mJ Currenta IAR - 2.7 A Repetitive Avalanche Energya EAR 5.0 mJ Single Pulse Avalanche Energyb Repetitive Avalanche Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s PD 50 W dV/dt - 5.0 V/ns TJ, Tstg - 55 to + 150 260d °C www.kersemi.com 1 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient RthJA - - 110 Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 50 Maximum Junction-to-Case (Drain) RthJC - - 2.5 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = - 250 µA - 250 - - V ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.25 - V/°C VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 250 V, VGS = 0 V - - - 100 VDS = - 200 V, VGS = 0 V, TJ = 125 °C - - - 500 Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = - 1.7 Ab VGS = - 10 V VDS = - 50 V, ID = - 1.7 A µA - - 3.0 Ω 0.9 - - S - 220 - - 75 - - 11 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 pF - - 14 - - 3.1 Qgd - - 6.8 td(on) - 11 - tr - 14 - - 20 - - 17 - - 4.5 - - 7.5 - - - - 2.7 - - - 11 - - - 5.8 V - 150 220 ns - 870 1300 nC td(off) VGS = - 10 V ID = - 1.7 A, VDS = - 200 V, see fig. 6 and 13b VDD = - 125 V, ID = - 1.7 A, RG = 21 Ω, RD = 70 Ω, see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton www.kersemi.com 2 MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 2.7 A, VGS = 0 Vb TJ = 25 °C, IF = - 1.7 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 1 -4.5V 20μs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 TJ = 25 ° C 1 V DS = -50V 20μs PULSE WIDTH 0.1 4 100 Fig. 1 - Typical Output Characteristics, TC = 25 °C -4.5V 20μs PULSE WIDTH TJ = 150 °C 10 100 -VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 1 1 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics 2.5 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP 0.1 0.1 5 -VGS, Gate-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 10 TJ = 150 ° C ID = -2.7A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig. 4 - Normalized On-Resistance vs. Temperature www.kersemi.com 3 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 300 Ciss 200 100 Coss 10 ISD , Reverse Drain Current (A) C, Capacitance (pF) 400 Crss 0 1 10 TJ = 150 ° C 1 TJ = 25 ° C 0.1 1.0 100 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage -IID , Drain Current (A) -VGS , Gate-to-Source Voltage (V) OPERATION IN THIS AREA LIMITED BY RDS(on) 12 8 10 100us 1 1ms 4 FOR TEST CIRCUIT SEE FIGURE 13 0 3 6 9 12 15 QG , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.kersemi.com 4 5.0 100 VDS =-200V VDS =-125V VDS =-50V 0 4.0 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID = -1.7 A 16 3.0 VSD ,Source-to-Drain Voltage (V) -VDS, Drain-to-Source Voltage (V) 20 V GS = 0 V 2.0 0.1 10ms TC = 25 °C TJ = 150 °C Single Pulse 10 100 -VDS , Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 1000 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 RD VDS 3.0 VGS D.U.T. RG +VDD -ID , Drain Current (A) 2.5 - 10 V 2.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 1.5 Fig. 10a - Switching Time Test Circuit 1.0 td(on) 0.5 td(off) tf tr VGS 10 % 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case wwwkersemi.com 5 IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 L VDS IAS + VDD A D.U.T. RG IAS - 20 V tp Driver 0.01 Ω tp 15 V VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS , Single Pulse Avalanche Energy (mJ) 200 ID -1.3A -1.8A BOTTOM -2.8A TOP 160 120 80 40 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.kersemi.com 6 Fig. 13b - Gate Charge Test Circuit IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel www.kersemi.com 7