Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR745 series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION QUICK REFERENCE DATA VR = 40 V/ 45 V k 1 a 2 IF(AV) = 7.5 A VF ≤ 0.57 V PINNING Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. PIN The PBYR745 series is supplied in the conventional leaded SOD59 (TO220AC) package. tab SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab cathode 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. PBYR7 VRRM VRWM VR IF(AV) IFRM IFSM IRRM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature UNIT 40 45 - 40 45 V - 40 45 V Tmb ≤ 114 ˚C - 40 45 V square wave; δ = 0.5; Tmb ≤ 136 ˚C - 7.5 A square wave; δ = 0.5; Tmb ≤ 136 ˚C - 15 A t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 135 150 A A - 1 A - 150 ˚C - 65 175 ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient November 1998 CONDITIONS MIN. in free air 1 TYP. MAX. UNIT - - 3 K/W - 60 - K/W Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR745 series ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Cd Junction capacitance IF = 7.5 A; Tj = 125˚C IF = 15 A; Tj = 125˚C IF = 15 A VR = VRWM VR = VRWM; Tj = 100˚C VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C November 1998 MIN. 2 - TYP. MAX. UNIT 0.45 0.65 0.64 0.13 17 270 0.57 0.72 0.84 1 22 - V V V mA mA pF Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier 8 PBYR745 series PBYR745 Forward dissipation, PF (W) Vo = 0.42 V Rs = 0.02 Ohms 7 Tmb(max) (C) PBYR745 Reverse current, IR (mA) 100 129 D = 1.0 6 126 125 C 132 0.5 10 100 C 135 5 0.2 0.1 4 138 3 tp I D= 2 1 0 tp T 141 t 147 T 0 2 4 6 8 Average forward current, IF(AV) (A) 1 50 C 144 0.1 150 12 10 PBYR745 Forward dissipation, PF (W) Tmb(max) / C Vo = 0.42 V 7 Rs = 0.02 Ohms 0 2.2 1.9 3 141 2 144 1 147 1000 2 3 4 5 6 Average forward current, IF(AV) (A) 100 10 150 8 7 1 100 Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C. PBYR745 Forward current, IF (A) 10 VR / V Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 50 PBYR745 Cd / pF 126 138 4 1 Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj 135 2.8 0 50 132 a = 1.57 5 0 25 Reverse voltage, VR (V) 129 6 4 Tj = 25 C 0.01 Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. 8 75 C 10 Transient thermal impedance, Zth j-mb (K/W) Tj = 25 C Tj = 125 C 40 1 30 typ 20 0.1 max PD tp D= 10 0 T 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 0.01 1.4 Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj November 1998 1us 10us 100us tp T t 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR745 Fig.6. Transient thermal impedance; Zth j-mb = f(tp). 3 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR745 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.7. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1998 4 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR745 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1998 5 Rev 1.300