IXYS IXFH14N80P Polarhv hiperfet power mosfet Datasheet

PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 14N80P
IXFQ 14N80P
IXFT 14N80P
IXFV 14N80P
IXFV 14N80PS
VDSS
ID25
RDS(on)
trr
TO-247 (IXFH)
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
800
800
V
V
VGS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
14
40
A
A
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
7
30
500
A
mJ
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 5 Ω
10
V/ns
PD
= 800 V
= 14 A
≤ 720 mΩ
Ω
≤ 250 ms
Maximum Ratings
TJ
TJM
Tstg
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque (TO-247, TO-3P)
Weight
PLUS220, PLUS220 SMD
TO-268, TO-3P
TO-247
TO-3P (IXFQ)
G
D
(TAB)
S
TO-268 (IXFT)
G
S
D (TAB)
TC = 25°C
TL
TSOLD
D (TAB)
400
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10 Nm/lb.in.
2
5.5
6
PLUS220 (IXFV)
G
D (TAB)
D
S
PLUS220SMD (IXFV...S)
g
g
g
G
S
G = Gate
S = Source
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
Features
BVDSS
800
z
VGS = 0 V, ID = 250μA
V
z
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±30 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
3.0
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
5.5
V
±100
nA
25
1
μA
mA
720 mΩ
z
D = Drain
TAB = Drain
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
z
© 2006 IXYS All rights reserved
D (TAB)
Easy to mount
Space savings
High power density
DS99593E(07/06)
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 20 V; ID = 0.5 ID25, pulse test
8
Ciss
Coss
15
S
3900
pF
250
pF
19
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
26
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
29
ns
td(off)
RG = 5 Ω (External)
62
ns
tf
27
ns
Qg(on)
61
nC
18
nC
20
nC
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
1
(TO-247, TO-3P)
Source-Drain Diode
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
14
A
ISM
Repetitive
40
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25A,
QRM
IRM
-di/dt = 100 A/μs
VR = 100V
250
0.4
5
3
Dim.
°C/W
0.21
2
Terminals: 1 - Gate
3 - Source
0.31 °C/W
RthJC
RthCS
TO-247 (IXFH) Outline
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXFT) Outline
ns
μC
A
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
14
27
VGS = 10V
7V
12
VGS = 10V
7V
24
21
6V
ID - Amperes
ID - Amperes
10
8
6
18
6V
15
12
9
4
6
5V
2
3
0
5V
0
0
1
2
3
4
5
6
7
8
9
10
11
12
0
3
6
9
15
18
21
24
27
30
Fig. 4. RDS(on) Normalized to ID = 7A Value vs.
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
3.1
14
VGS = 10V
VGS = 10V
2.8
12
2.5
RDS(on) - Normalized
6V
10
ID - Amperes
12
VDS - Volts
VDS - Volts
5V
8
6
4
2.2
I D = 14A
1.9
1.6
I D = 7A
1.3
1
2
0.7
0
0.4
0
2
4
6
8
10
12
14
16
18
20
22
24
-50
26
-25
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 7A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
16
2.8
VGS = 10V
2.6
14
TJ = 125ºC
2.4
12
2.2
ID - Amperes
RDS(on) - Normalized
0
2
1.8
1.6
10
8
6
1.4
4
1.2
TJ = 25ºC
2
1
0.8
0
0
4
8
12
16
I D - Amperes
© 2006 IXYS All rights reserved
20
24
28
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Fig. 8. Transconductance
20
30
18
27
16
24
14
21
12
g f s - Siemens
ID - Amperes
Fig. 7. Input Admittance
TJ = 125ºC
25ºC
- 40ºC
10
8
15
12
6
9
4
6
2
3
0
TJ = - 40ºC
25ºC
125ºC
18
0
3.5
4
4.5
5
5.5
6
0
2
4
6
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
10
12
14
16
18
20
Fig. 10. Gate Charge
45
10
40
9
VDS =400V
I D = 7A
8
35
I G = 10mA
7
30
VGS - Volts
IS - Amperes
8
I D - Amperes
25
TJ = 125ºC
20
TJ = 25ºC
15
6
5
4
3
10
2
5
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
1.1
10
VSD - Volts
20
30
40
50
60
QG - NanoCoulombs
Fig. 13. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
1.000
10,000
C iss
1,000
R(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
C oss
0.100
100
C rss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.010
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_14N80P (6J) 5-02-06.xls
IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
TO-3P-3L PACKAGE Outline
1. GATE
2. DRAIN (COLLECTOR)
3. SOURCE (EMITTER)
4. DRAIN (COLLECTOR)
ALL METAL AREA ARE TIN PLATED.
Ref: IXYS CO 0170 RA
© 2006 IXYS All rights reserved
PLUS220 (IXFV) Outline
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