ON NTGS3446 Power mosfet 5.1 amps, 20 volts n−channel tsop−6 Datasheet

NTGS3446
Power MOSFET
5.1 Amps, 20 Volts
N−Channel TSOP−6
Features
•
•
•
•
•
•
•
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS Specified at Elevated Temperature
Pb−Free Package Option for Green Manufacturing (G Suffix)
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V(BR)DSS
RDS(on) TYP
ID MAX
20 V
36 m @ 4.5 V
5.1 A
N−Channel
Applications
• Power Management in portable and battery−powered products, i.e.
Drain 1 2 5 6
computers, printers, PCMCIA cards, cellular and cordless
• Lithium Ion Battery Applications
• Notebook PC
Gate 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12
V
RJA
Pd
244
0.5
°C/W
Watts
ID
IDM
2.5
10
Amps
Amps
RJA
Pd
128
1.0
°C/W
Watts
ID
IDM
3.6
14
Amps
Amps
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp 10 s)
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp 10 s)
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp 10 s)
62.5
2.0
°C/W
Watts
ID
IDM
5.1
2.0
Amps
Amps
IS
5.1
A
Operating and Storage Temperature Range
TJ, Tstg
−55 to
150
°C
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
TL
260
°C
November, 2003 − Rev. 3
5
4
6
3
2
446
W
1
446
W
TSOP−6
CASE 318G
STYLE 1
= Device Code
= Work Week
PIN ASSIGNMENT
Drain Drain Source
6 5 4
1
2 3
Drain Drain Gate
ORDERING INFORMATION
Device
1. Minimum FR−4 or G−10PCB, operating to steady state.
2. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick
single−sided), operating to steady state.
3. Mounted onto a 2” square FR−4 board (1” sq. 2 oz. cu. 0.06” thick
single−sided), t < 5.0 seconds.
 Semiconductor Components Industries, LLC, 2003
MARKING
DIAGRAM
1
RJA
Pd
Source Current (Body Diode)
Source 4
NTGS3446T1
NTGS3446T1G
Package
Shipping†
TSOP−6
3000/Tape & Reel
TSOP−6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGS3446/D
NTGS3446
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
20
−
−
22
−
−
−
−
−
−
1.0
25
−
−
−
−
100
−100
0.6
−
0.85
−2.5
1.2
−
−
−
36
44
45
55
gFS
−
12
−
mhos
Ciss
−
510
750
pF
Coss
−
200
350
Crss
−
60
100
td(on)
−
9.0
16
tr
−
12
20
td(off)
−
35
60
tf
−
20
35
QT
−
8.0
15
Qgs
−
2.0
−
Qgd
−
2.0
−
−
−
0.74
0.66
1.1
−
trr
−
20
−
ta
−
11
−
tb
−
9.0
−
QRR
−
0.01
−
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 85°C)
Vdc
Adc
IDSS
Gate−Body Leakage Current (VGS = ± 12 Vdc, VDS = 0)
IGSS(f)
IGSS(r)
mV/°C
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
ID = 0.25 mA, VDS = VGS
Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 5.1 Adc)
(VGS = 2.5 Vdc, ID = 4.4 Adc)
RDS(on)
Forward Transconductance (VDS = 10 Vdc, ID = 5.1 Adc)
Vdc
mV/°C
m
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS = 4.5 Vdc, RG = 6.0 )
Fall Time
Gate Charge
(VDS = 10 Vdc, ID = 5.1 Adc,
VGS = 4.5 Vdc)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 4)
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 85°C)
Reverse Recovery Time
(IS = 1.7
1 7 Adc,
Adc VGS = 0 Vdc,
Vdc
diS/dt = 100 A/s)
Reverse Recovery Stored
Charge
4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
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2
VSD
Vdc
ns
C
1.8
1.6
100
ID = 5.1 A
VGS = 4.5 V
td(off)
tf
1.4
t, TIME (ns)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
NTGS3446
1.2
1
tr
10
td(on)
0.8
VDD = 10 V
ID = 1.0 A
VGS = 4.5 V
0.6
0.4
−50
−25
0
25
50
75
100
125
150
1
1
10
TJ, JUNCTION TEMPERATURE (°C)
RG, GATE RESISTANCE ()
Figure 1. On−Resistance Variation with
Temperature
Figure 2. Resistive Switching Time Variation
vs. Gate Resistance
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3
100
NTGS3446
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE H
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L
6
S
1
5
4
2
3
B
DIM
A
B
C
D
G
H
J
K
L
M
S
D
G
M
J
C
0.05 (0.002)
H
K
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.55
0
10 2.50
3.00
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0
10 0.0985 0.1181
DRAIN
DRAIN
GATE
SOURCE
DRAIN
DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTGS3446/D
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