IPI70R950CE,IPD70R950CE,IPS70R950CE MOSFET 700VCoolMOSªCEPowerTransistor I²PAK CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features DPAK tab IPAKSL tab tab 1 2 3 Drain Pin 2, Tab Gate Pin 1 •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Source Pin 3 Applications Adapter,LCD&PDPTVandIndoorlighting Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 750 V RDS(on),max 950 mΩ Qg.typ 15.3 nC Id.typ 7.4 A ID,pulse 12 A Eoss@400V 1.5 µJ Type/OrderingCode Package IPI70R950CE PG-TO 262 IPD70R950CE PG-TO 252 IPS70R950CE PG-TO 251 Final Data Sheet Marking 70S950CE 1 RelatedLinks see Appendix A Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Final Data Sheet 2 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 7.4 4.7 A TC=25°C TC=100°C - 12 A TC=25°C - - 50 mJ ID=1A; VDD=50V; see table 10 EAR - - 0.15 mJ ID=1A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 1.0 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 68 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 5.2 A TC=25°C Diode pulse current IS,pulse - - 12 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 1) Limited by Tj max. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 1.85 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.5 V VDS=VGS,ID=0.15mA - 10 1 - µA VDS=700V,VGS=0V,Tj=25°C VDS=700V,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.86 2.22 0.95 - Ω VGS=10V,ID=1.5A,Tj=25°C VGS=10V,ID=1.5A,Tj=150°C Gate resistance RG - 5.5 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 700 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 328 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 23 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 14 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 58.5 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 6.6 - ns VDD=400V,VGS=13V,ID=2.2A, RG=10.2Ω;seetable9 Rise time tr - 5.2 - ns VDD=400V,VGS=13V,ID=2.2A, RG=10.2Ω;seetable9 Turn-off delay time td(off) - 41 - ns VDD=400V,VGS=13V,ID=2.2A, RG=10.2Ω;seetable9 Fall time tf - 13.6 - ns VDD=400V,VGS=13V,ID=2.2A, RG=10.2Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 1.8 - nC VDD=480V,ID=2.2A,VGS=0to10V Gate to drain charge Qgd - 8 - nC VDD=480V,ID=2.2A,VGS=0to10V Gate charge total Qg - 15.3 - nC VDD=480V,ID=2.2A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=2.2A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V 2) Final Data Sheet 5 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=2.2A,Tj=25°C 226 - ns VR=400V,IF=2.2A,diF/dt=100A/µs; see table 8 - 1.3 - µC VR=400V,IF=2.2A,diF/dt=100A/µs; see table 8 - 9.9 - A VR=400V,IF=2.2A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 80 70 1 µs 101 10 µs 60 100 µs 1 ms 100 DC ID[A] Ptot[W] 50 40 10-1 30 20 10-2 10 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 101 1 µs 10 µs 100 100 µs 1 ms 0.2 ZthJC[K/W] ID[A] 100 DC -1 10 0.5 0.1 0.05 0.02 10 -1 0.01 single pulse 10-2 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 14 8 20 V 13 20 V 12 7 10 V 8V 11 6 8V 10 9 7V 5 8 7V ID[A] ID[A] 10 V 7 6V 4 6 5 5.5 V 2 5V 6V 4 3 5.5 V 2 5V 1 4.5 V 0 3 0 5 10 4.5 V 1 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 5.0 2.4 2.2 4.5 2.0 4.0 1.8 1.6 5V 5.5 V 6V 6.5 V 7V RDS(on)[Ω] RDS(on)[Ω] 3.5 3.0 2.5 10 V 1.4 98% typ 1.2 1.0 2.0 0.8 1.5 1.0 0.6 0 1 2 3 4 5 6 7 8 0.4 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=1.5A;VGS=10V 8 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 14 10 9 25 °C 12 8 10 120 V 480 V 7 6 ID[A] VGS[V] 8 150 °C 6 5 4 3 4 2 2 1 0 0 2 4 6 8 10 0 12 0 2 4 6 VGS[V] 8 10 12 14 16 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=2.2Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 50 25 °C 125 °C 40 101 IF[A] EAS[mJ] 30 20 0 10 10 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=1.0A;VDD=50V 9 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 800 780 760 103 Ciss 720 C[pF] VBR(DSS)[V] 740 700 102 Coss 680 101 660 Crss 640 620 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1.0mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 2.0 Eoss[µJ] 1.5 1.0 0.5 0.0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE 6PackageOutlines Figure1OutlinePG-TO262,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE *) mold flash not included DIM A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 F1 F2 F3 F4 F5 F6 MILLIMETERS MIN MAX 2.16 2.41 0.00 0.15 0.64 0.89 0.65 1.15 5.00 5.50 0.46 0.60 0.46 0.98 5.97 6.22 5.02 5.84 6.40 6.73 4.70 5.60 2.29 (BSC) 4.57 (BSC) 3 9.40 10.48 1.18 1.70 0.90 1.25 0.51 1.00 10.60 6.40 2.20 5.80 5.76 1.20 INCHES MIN 0.085 0.000 0.025 0.026 0.197 0.018 0.018 0.235 0.198 0.252 0.185 0.370 0.046 0.035 0.020 MAX 0.095 0.006 0.035 0.045 0.217 0.024 0.039 0.245 0.230 0.265 0.220 0.090 (BSC) 0.180 (BSC) 3 0.413 0.067 0.049 0.039 0.417 0.252 0.087 0.228 0.227 0.047 DOCUMENT NO. Z8B00003328 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 01-09-2015 REVISION 05 Figure2OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE DOCUMENT NO. Z8B00003329 DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS MIN MAX 2.18 2.40 0.80 1.14 0.64 0.89 0.65 1.15 4.95 5.50 0.46 0.59 0.46 0.89 5.97 6.22 5.04 5.55 6.35 6.73 4.60 5.21 2.29 4.57 3 3.00 3.60 0.80 1.25 0.88 1.28 INCHES MIN 0.086 0.031 0.025 0.026 0.195 0.018 0.018 0.235 0.198 0.250 0.181 MAX 0.094 0.045 0.035 0.045 0.217 0.023 0.035 0.245 0.219 0.265 0.205 0.090 0.180 3 0.118 0.031 0.035 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 21-10-2015 0.142 0.049 0.050 REVISION 06 Figure3OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 14 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE 7AppendixA Table11RelatedLinks • IFXCoolMOSTMCEWebpage:www.infineon.com • IFXCoolMOSTMCEapplicationnote:www.infineon.com • IFXCoolMOSTMCEsimulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 15 Rev.2.0,2016-02-18 700VCoolMOSªCEPowerTransistor IPI70R950CE,IPD70R950CE,IPS70R950CE RevisionHistory IPI70R950CE, IPD70R950CE, IPS70R950CE Revision:2016-02-18,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-02-18 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 16 Rev.2.0,2016-02-18