PMK27XP P-channel extremely low level FET Rev. 01 — 15 January 2004 M3D315 Product data 1. Product profile 1.1 Description Extremely low level P-channel enhancement mode field-effect transistor in a plastic package using TrenchDMOS technology. 1.2 Features ■ Low threshold ■ Low on-state resistance. 1.3 Applications ■ Load switching ■ Laptop computers ■ Battery packs ■ Battery powered portable equipment. 1.4 Quick reference data ■ VDS ≤ −20 V ■ Ptot ≤ 2.5 W ■ ID ≤ −6.5 A ■ RDSon = 27 mΩ (typ). 2. Pinning information Table 1: Pinning - SOT96-1 (SO-8), simplified outline and symbol Pin Description 1,2,3 source (s) 4 gate (g) 5,6,7,8 drain (d) Simplified outline 8 5 1 4 Symbol d g Top view MBK187 s MBB075 SOT 96-1 (SO-8) 3. Ordering information Table 2: Ordering information Type number PMK27XP Package Name Description Version S08 Plastic surface mounted package; 8 leads SOT96-1 PMK27XP Philips Semiconductors P-channel extremely low level FET 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - −20 V Tamb = 25 °C; Figure 2 - −6.5 A Tamb = 70 °C; Figure 2 - −5.2 A Tamb = 25 °C; Figure 2 - −4.6 A Tamb = 70 °C; Figure 2 - −3.7 A - −12 V VDS drain-source voltage (DC) Tamb = 25 °C ID drain current VGS = −4.5 V; tp < 10s VGS = −4.5 V; tp > 10s VGS gate-source voltage (DC) IDM peak drain current Tamb = 25 °C; pulsed; tp ≤ 300 µs; Figure 3 - −32 A Ptot total power dissipation Tamb = 25 °C; tp < 10s; Figure 1 - 2.5 W Ptot total power dissipation Tamb = 25 °C; tp > 10s; Figure 1 - 1.25 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C - −1.7 A Source-drain diode IS source (diode forward) current (DC) Tamb = 25 °C © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 11549 Product data Rev. 01 — 15 January 2004 2 of 11 PMK27XP Philips Semiconductors P-channel extremely low level FET 03an63 120 03an62 120 Ider % Pder (%) 80 80 40 40 0 0 0 50 100 Tamb (°C) 150 0 P tot P der = ----------------------- × 100% P ° 50 100 ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature. Fig 2. Normalized continuous drain current as a function of solder point temperature. 03an64 102 ID Tamb °C 150 Limit RDSon = VDS / ID (-A) 10 tp = 100 µs 1 ms 10 ms 1 100 ms DC 10-1 10-2 10-1 1 10 VDS (-V) 102 Tamb = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 11549 Product data Rev. 01 — 15 January 2004 3 of 11 PMK27XP Philips Semiconductors P-channel extremely low level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Rth(j-sp) thermal resistance from junction to solder point Figure 4 Rth(j-amb) thermal resistance from junction to ambient Min Typ Max Unit - - 27 K/W steady state - - 100 K/W tp < 10 s - - 50 K/W minimum footprint; mounted on a printed-circuit board 5.1 Transient thermal impedance 03an61 1 a δ = 0.5 0.2 10-1 0.1 0.05 δ= P tp T 0.02 10-2 10-4 10-3 t tp Single Pulse T 10-2 10-1 1 10 102 tp (s) 103 Z th ( j – amb ) a = -------------------------R th ( j – amb ) Fig 4. Normalised transient thermal impedance from junction to ambient as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 11549 Product data Rev. 01 — 15 January 2004 4 of 11 PMK27XP Philips Semiconductors P-channel extremely low level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics ID = −250 µA; VGS = 0 V −20 - - V VGS(th) gate-source threshold voltage ID = −250 µA; VDS = VGS; Figure 9 −0.6 - - V IDSS drain-source leakage current VGS = 0 V; VDS = −20 V - - −1 µA VGS = 0 V; VDS = −16 V; Tj = 70 °C - - −5 µA V(BR)DSS drain-source breakdown voltage IGSS gate-source leakage current VGS = ±12 V; VDS = 0 V - - 100 nA RDSon drain-source on-state resistance VGS = −4.5 V; ID = −6.5 A; Figure 7 and 8 - 27 35 mΩ VGS = −2.5 V; ID = −5 A; Figure 7 and 8 - 46 60 mΩ ID = −6.5 A; VDD = −15 V; VGS = −4.5 V; Figure 12 - 13.6 - nC - 2.3 - nC - 5.5 - nC - 1044 - pF - 273 - pF - 211 - pF - 10 - ns - 35 - ns Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 38 - ns tf fall time - 50 - ns - - −1.5 V VGS = 0 V; VDS = −10 V; f = 1 MHz; Figure 10 VDD = −15 V; ID = −6.5 A; VGS = −4.5 V; RG = 6 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = −6.5 A; VGS = 0 V; Figure 11 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 11549 Product data Rev. 01 — 15 January 2004 5 of 11 PMK27XP Philips Semiconductors P-channel extremely low level FET 03am04 40 −4.5 V ID (−A) −5 V −4 V 03am06 32 ID (-A) −3.5 V 30 24 −3 V 20 16 −2.5 V 10 8 −2 V 25 °C −55 °C 125 °C VGS = −1.5 V 0 0 0 1.5 3 VDS (−V) 4.5 Tj = 25 °C 0 1.5 3 VGS (−V) 4.5 Tj = −55 °C, 25 °C and 125 °C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 03am05 60 Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03an41 1.6 a RDSon (mΩ ) 1.2 −2.5 V 40 0.8 VGS = −4.5 V 20 0.4 0 0 4 8 ID (−A) 12 Tj = 25 °C 0 −100 100 Tj (°C) 200 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 11549 Product data 0 Rev. 01 — 15 January 2004 6 of 11 PMK27XP Philips Semiconductors P-channel extremely low level FET 03an42 0 VGS(th) (−V) 03an40 1800 C (pF) 0.4 1200 0.8 600 Ciss Coss Crss 1.2 0 −100 0 100 200 0 5 10 Tj (°C) ID = −250 µA; VDS = VGS 15 VDS(−V) 20 VGS = 0 V; f = 1 MHz Fig 9. Gate-source threshold voltage as a function of junction temperature; typical values. 03am07 32 IS (−A) Fig 10. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03am03 6 VGS (−V) 24 4 Tj = 25 °C 16 2 8 0 0 0 0.4 0.8 VSD (−V) 1.2 0 8 12 QG (nC) 16 ID = −6.5 A; VDD = −15 V VGS = 0 V Fig 11. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 12. Gate-source voltage as a function of gate charge; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 11549 Product data 4 Rev. 01 — 15 January 2004 7 of 11 PMK27XP Philips Semiconductors P-channel extremely low level FET 7. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 D E A X c y HE v M A Z 5 8 Q A2 A (A 3) A1 pin 1 index θ Lp L 4 1 e detail X w M bp 0 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (2) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.069 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.014 0.0075 0.20 0.19 0.16 0.15 0.05 0.01 0.01 0.004 0.028 0.012 inches 0.244 0.039 0.028 0.041 0.228 0.016 0.024 θ o 8 0o Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT96-1 076E03 MS-012 JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-27 03-02-18 Fig 13. SOT96-1 (SO8). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 11549 Product data Rev. 01 — 15 January 2004 8 of 11 PMK27XP Philips Semiconductors P-channel extremely low level FET 8. Revision history Table 6: Revision history Rev Date 01 20040115 CPCN Description - Product data (9397 750 11549). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 11549 Product data Rev. 01 — 15 January 2004 9 of 11 PMK27XP Philips Semiconductors P-channel extremely low level FET 9. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 11549 Rev. 01 — 15 January 2004 10 of 11 Philips Semiconductors PMK27XP P-channel extremely low level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 15 January 2004 Document order number: 9397 750 11549