IXYS IXGM25N100A Low vce(sat), high speed igbt Datasheet

VCES
Low VCE(sat)
High speed IGBT
IXGH/IXGM 25 N100 1000 V
IXGH/IXGM 25 N100A 1000 V
Symbol
Test Conditions
Maximum Ratings
V CES
TJ = 25°C to 150°C
1000
V
V CGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1000
V
V GES
Continuous
±20
V
V GEM
Transient
±30
V
I C25
T C = 25°C
50
A
I C90
T C = 90°C
I CM
T C = 25°C, 1 ms
SSOA
(RBSOA)
V GE = 15 V, TVJ = 125°C, RG = 33 Ω
Clamped inductive load, L = 100 µH
PC
T C = 25°C
25
A
100
A
ICM = 50
@ 0.8 VCES
A
200
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
I C25
VCE(sat)
50 A
50 A
3.5 V
4.0 V
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
International standard packages
2nd generation HDMOSTM process
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Voltage rating guaranteed at high
temperature (125°C)
l
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
°C
300
l
l
l
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
BVCES
IC
= 3 mA, VGE = 0 V
VGE(th)
IC
= 250 µA, VCE = VGE
I CES
V CE = 0.8 • VCES
V GE = 0 V
I GES
V CE = 0 V, VGE = ±20 V
VCE(sat)
IC
1000
2.5
V
5
V
l
l
l
= IC90, VGE = 15 V
TJ = 25°C
TJ = 125°C
25N100
25N100A
250
1
µA
mA
±100
nA
3.5
4.0
V
V
l
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
l
l
© 1996 IXYS All rights reserved
91516E (3/96)
IXGH 25N100
IXGH 25N100A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
8
Cies
C oes
15
S
2750
pF
200
pF
50
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
C res
Qg
Q ge
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Q gc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°°C
IC = IC90, VGE = 15 V, L = 300 µH,
VCE = 0.8 V CES, RG = Roff = 33 Ω
Remarks: Switching times
may increase
25N100A
for VCE (Clamp) > 0.8 • V CES,
25N100A
higher TJ or increased RG
Inductive load, TJ = 125°°C
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 V CES, RG = Roff = 33 Ω
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES ,
higher TJ or increased RG
130
180
nC
25
60
nC
55
90
nC
100
ns
200
ns
500
ns
500
ns
5
mJ
100
ns
250
ns
3.5
mJ
720
1000
ns
25N100
25N100A
950
800
3000
1500
ns
ns
25N100
25N100A
10
8
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
mJ
mJ
0.62 K/W
RthJC
RthCK
IXGM 25N100
IXGM 25N100A
0.25
TO-204AE Outline
K/W
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGH 25N100
IXGH 25N100A
Fig. 1 Saturation Characteristics
50
200
9V
40
160
35
140
30
25
7V
20
15
13V
11V
120
100
80
9V
60
10
40
5
20
0
VGE = 15V
TJ = 25°C
180
IC - Amperes
IC - Amperes
Fig. 2 Output Characterstics
13V
11V
VG E= 15V
TJ = 25°C
45
7V
0
0
1
2
3
4
5
0
2
4
6
8
VCE - Volts
14 16 18 20
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
10
9
TJ = 25°C
VCE(sat) - Normalized
7
6
IC = 50A
5
4
3
IC = 25A
2
IC = 12.5A
0
7
8
1.3
1.2
1.1
IC = 25A
1.0
0.9
IC = 12.5A
0.8
1
6
IC = 50A
1.4
8
VCE - Volts
10 12
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
9
10
11
12
13
14
0.7
-50
15
-25
0
VGE - Volts
25
50
75
100 125 150
TJ - Degrees C
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
50
1.2
VGE(th)
VCE = 10V
BV / V(th) - Normalized
40
IC - Amperes
IXGM 25N100
IXGM 25N100A
30
20
TJ = 25°C
10
TJ = 125°C
IC = 250µA
1.1
1.0
0.9
BV CES
IC = 250µA
0.8
0.7
TJ = - 40°C
0
0
1
2
3
4
5
6
7
8
9
0.6
-50
10
VGE - Volts
0
25
50
75
TJ - Degrees C
25N100g1.JNB
© 1996 IXYS All rights reserved
-25
100 125 150
IXGH 25N100
IXGH 25N100A
Fig.7 Gate Charge
15
100
10
IC - Amperes
11
VGE - Volts
Fig.8 Turn-Off Safe Operating Area
VCE = 800V
IC = 25A
IG = 10mA
13
IXGM 25N100
IXGM 25N100A
9
7
5
T J = 125°C
dV/dt < 3V/ns
1
0.1
3
1
0.01
0
25
50
75
100
125
150
0
200
400
Gate Charge - nCoulombs
600
800
1000
V CE - Volts
Fig.9 Capacitance Curves
f = 1MHz
Capacitance - pF
2400
Cies
2000
1600
25N100g2.JNB
1200
800
Coes
400
Cres
0
0
5
10
15
20
25
V CE - Volts
Fig.10 Transient Thermal Impedance
1
Zthjc (K/W)
D=0.5
D=0.2
0.1 D=0.1
D = Duty Cycle
D=0.05
D=0.02
D=0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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