GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 80 60 5.0V VGS=10V VDS = 10V 50 60 ID -- Drain Current (A) ID -- Drain Source Current (A) 4.5V 6.0V 4.0V 40 3.5V 20 3.0V 40 30 TJ = 125°C 20 --55°C 25°C 10 2.5V 0 0 0 1 2 3 4 5 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 1.8 0.03 1.6 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (V) ID = 250µA 1.4 1.2 1 0.8 0.6 --50 0 25 50 75 100 125 150 VGS = 4.5V 5V 0.015 10V 0.01 0.005 1.6 VGS = 10V ID = 25A 1.4 1.2 1 0.8 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 20 40 60 ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature RDS(ON) -- On-Resistance (Normalized) 0.02 0 --25 TJ -- Junction Temperature (°C) 0.6 --50 0.025 125 150 80 100 GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 10 0.04 VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) VDS = 15V ID = 15A ID = 25A 0.035 0.03 0.025 0.02 TJ = 125°C 0.015 0.01 25°C 0.005 8 6 4 2 0 0 2 4 6 8 10 0 30 VGS -- Gate-to-Source Voltage (V) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 35 100 VGS = 0V f = 1MHZ VGS = 0V IS -- Source Current (A) 2000 C -- Capacitance (pF) 20 Qg -- Charge (nC) 2500 Ciss 1500 1000 500 0 10 10 TJ = 125°C 1 25°C --55°C 0.1 Coss Crss 0 5 0.01 10 15 20 VDS -- Drain-to-Source Voltage (V) 25 30 0 0.2 0.4 0.6 0.8 VSD -- Source-to-Drain Voltage (V) 1 1.2 GFB50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 11 – Transient Thermal Impedance Fig. 10 – Breakdown Voltage vs. Junction Temperature 1 43 ID = 250µA RθJA(norm) -- Normalized Thermal Impedance BVDSS -- Breakdown Voltage (V) 44 42 41 40 39 38 37 36 --50 --25 0 25 50 75 100 125 0.1 1. Duty Cycle, D = t1/t2 2. RθJA(t) = RθJA(norm) *RθJA 3. RθJA = 2.0°C/W 4. TJ -- TA = PDM* RθJA(t) 0.01 0.0001 150 Fig. 12 – Power vs. Pulse Duration 0.1 1 10 Fig. 13 – Maximum Safe Operating Area 1000 1000 Single Pulse RθJA = 2.0°C/W TC = 25°C ID -- Drain Current (A) 800 Power (W) 0.01 Pulse Duration (sec.) TJ -- Junction Temperature (°C) 600 400 0.001 0.01 0.1 Pulse Duration (sec.) 1 10 10 100 1m 10 m 10 RDS(ON) Limit 1 0.1 0µ s s s 100ms VGS = 10V Single Pulse RθJC = 2.0°C/W TA = 25°C 200 0 0.0001 0.001 DC 1 10 VDS -- Drain-Source Voltage (V) 100