Ordering number:ENN6394 PNP/NPN Epitaxial Planar Silicon Transistors CPH3114/CPH3214 DC/DC Converter Applications Applications Package Dimensions · Relay drivers, lamp drivers, motor drivers. unit:mm 2150A Features [CPH3114/CPH3214] 2.9 0.15 0.6 0.4 0.2 · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). · High allowable power dissipation. 3 2 1 2.8 0.6 1.6 0.05 0.2 1.9 0.7 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 Specifications ( ) : CPH3114 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings Unit VCBO VCEO (–)15 V (–)15 V VEBO IC (–)5 V (–)1.5 A ICP Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg (–)3 Mounted on a ceramic board (600mm2×0.8mm) A (–)300 mA 0.9 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)2V, IC=(–)100mA fT VCE=(–)2V, IC=(–)300mA Gain-Bandwidth Product Output Capacitance Cob Ratings min typ 200 VCB=(–)10V, f=1MHz max (–)0.1 µA (–)0.1 µA 560 (350) MHz 450 MHz (17)9 Marking : CPH3114 : AP, CPH3214 : CP Unit pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70500TS (KOTO) TA-2786 No.6394–1/5 CPH3114/CPH3214 Continued from preceding page. Parameter Symbol Ratings Conditions min max (–120) (–180) mV 130 200 mV (–210) (–320) mV 240 360 mV (–)0.85 (–)1.2 IC=(–)750mA, IB=(–)15mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)1.5mA, IB=(–)30mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)750mA, IB=(–)15mA V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time ton See specified test circuit. Storage Time tstg See specified test circuit. tf See specified test circuit. Fall Time Unit typ V (–)15 V (–)15 V (–)5 V (50)40 ns (90) ns 180 ns (15)20 ns Switching Time Test Circuit IB1 PW=20µs DC≤1% IB2 (For PNP, the polarity is reversed.) OUTPUT INPUT VR 50Ω RB RL + + 220µF 470µF VBE=–5V VCC=5V 20IB1= –20IB2= IC=750mA --1.2 --1.0 --6mA --0.8 --4mA --0.6 --2mA --0.4 A mA 10mA 8mA 30 mA 1.4 6mA 1.2 4mA 1.0 0.8 2mA 0.6 0.4 0.2 --0.2 IB=0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Collector-to-Emitter Voltage, VCE – V 0 CPH3114 VCE= --2V 0.3 --0.7 --0.6 --0.5 Ta=75 °C 25°C --25°C --0.4 --0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT01692 IC -- VBE CPH3214 VCE=2V 0.9 Collector Current, IC – A --0.8 --0.2 0.2 1.0 --0.9 --0.3 0.1 Collector-to-Emitter Voltage, VCE – V IT01691 IC -- VBE --1.0 IB=0 0 --0.9 --1.0 0.8 0.7 0.6 0.5 0.4 Ta=75°C 25°C --25°C 0 Collector Current, IC – A 1.6 40 --10mA --8mA mA 20 50m 1.8 Collector Current, IC – A --1.4 CPH3214 --3 0 --50 m A --1.6 IC -- VCE 2.0 --20mA mA --4 0 CPH3114 --1.8 Collector Current, IC – A mA IC -- VCE --2.0 0.3 0.2 0.1 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V --1.2 IT01693 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE – V 1.0 1.2 IT01694 No.6394–2/5 CPH3114/CPH3214 hFE -- IC 1000 CPH3114 VCE= --2V 7 Ta=75 ° C 2 --25°C 100 7 5 3 2 3 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 7 5 CPH3114 VCE= --2V 3 2 100 7 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 5 7 2 0.1 3 5 Collector Current, IC – A 3 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 Output Capacitance, Cob – pF 10 7 5 3 2 2 3 IT01698 CPH3214 f=1MHz 7 2 7 1.0 Cob -- VCB 100 3 3 IT01696 Collector Current, IC – A CPH3114 f=1MHz 2 1.0 CPH3214 VCE=2V IT01697 5 7 f T -- IC 5 10 0.01 3 Cob -- VCB 1.0 --1.0 2 7 Gain-Bandwidth Product, f T – MHz 5 2 10 0.01 3 5 3 2 10 7 5 3 2 1.0 2 3 5 7 2 --10 Collector-to-Base Voltage, VCB – V 3 VCE(sat) -- IC --1000 CPH3114 IC / IB=20 5 2 --100 7 75 Ta= 2 °C °C 25 5°C --2 --10 2 3 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 2 5 7 3 IT01701 2 10 3 IT01700 VCE(sat) -- IC CPH3214 IC / IB=20 7 3 3 3 Collector-to-Base Voltage, VCB – V 1000 7 5 2 1.0 IT01699 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV Gain-Bandwidth Product, f T – MHz 100 1000 7 Output Capacitance, Cob – pF 2 f T -- IC 100 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV --25°C 2 IT01695 7 7 5 --0.01 3 2 1000 10 --0.01 Ta=75°C 3 2 10 --0.01 25°C 5 25°C 3 CPH3214 VCE=2V 7 DC Current Gain, hFE DC Current Gain, hFE 5 hFE -- IC 1000 5 3 2 100 °C 25 7 5 °C 75 5°C --2 3 Ta= 2 10 7 5 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC – A 7 1.0 2 3 IT01702 No.6394–3/5 CPH3114/CPH3214 VCE(sat) -- IC --1000 3 2 75 --100 °C C 25° 7 5 5°C 3 --2 Ta= 2 --10 7 5 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC – A 7 --1.0 3 3 2 Ta= --25°C 7 25°C 3 2 --0.1 --0.01 3 5 7 --0.1 5 Collector Current, IC – A 7 --1.0 2 op era tio n s s m s 0µ 0m s Ta=25°C Single pulse For PNP, minus sign is omitted. 2 3 5 7 1.0 2 10 2 3 5 7 0.1 2 3 5 Collector Current, IC – A 7 1.0 2 3 IT01704 VBE(sat) -- IC CPH3214 IC / IB=50 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 2 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC – A 3 IT01706 PC -- Ta 1.2 1.0 M 0.9 ou nte 0.8 do na 0.6 ce ram ic bo ard 0.4 (60 0m m2 ×0 .8m 0.2 Mounted on a ceramic board(600mm2×0.8mm) 0.01 0.1 Ta= 2 CPH3114/CPH3214 s 50 3 2 1m 10 °C --25 3 1.4 0µ 10 5 0.1 0.01 3 10 IC=1.5A DC C 7 IT01705 ICP=3A 1.0 7 5 3 2 3 CPH3114/CPH3214 3 2 0.1 7 5 2 ASO 10 7 5 Collector Current, IC – A 2 °C 75 25° 100 7 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 75°C 2 10 7 5 3 IT01703 CPH3114 IC / IB=50 --1.0 5 7 5 0.01 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) – V 2 CPH3214 IC / IB=50 7 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 5 Collector Dissipation, PC – W Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 7 VCE(sat) -- IC 1000 CPH3114 IC / IB=50 m) 0 3 5 7 10 Collector-to-Emitter Voltage, VCE – V 2 3 IT01707 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT01708 No.6394–4/5 CPH3114/CPH3214 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS No.6394–5/5