EMH2412 Ordering number : ENA1315A SANYO Semiconductors DATA SHEET EMH2412 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance Best suited for LiB charging and discharging switch Common-drain type 2.5V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 24 V ±12 V 6 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W Total Dissipation PD PT 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7045-006 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 EMH2412-TL-H Taping Type : TL 5 1 Marking LM 2.1 1.7 8 LOT No. TL 0.2 4 0.5 0.05 0.75 2.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Electrical Connection 8 7 6 5 1 2 3 4 SANYO : EMH8 http://semicon.sanyo.com/en/network 52312 TKIM/91008PE TI IM TC-00001579 No. A1315-1/7 EMH2412 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions Ratings min typ Unit max 24 ID=1mA, VGS=0V VDS=20V, VGS=0V V --1 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 Forward Transfer Admittance | yfs | VDS=10V, ID=3A 2.8 RDS(on)1 RDS(on)2 16 21 27 mΩ 17 22 29 mΩ RDS(on)3 ID=3A, VGS=4.5V ID=3A, VGS=4V ID=3A, VGS=3.1V 18 25 34 mΩ RDS(on)4 ID=1.5A, VGS=2.5V 21 30 42 mΩ Static Drain-to-Source On-State Resistance Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=4.5V, ID=6A 1.3 4.8 310 ns 1020 ns 3000 ns 2250 ns 6.3 nC 0.83 nC 1.9 IS=6A, VGS=0V V S 0.8 nC 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=3A RL=3.33Ω VIN D PW=10μs D.C.≤1% G VOUT Rg EMH2412 P.G 50Ω S Rg=2kΩ Ordering Information Device EMH2412-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1315-2/7 EMH2412 ID -- VDS 6 VGS=1.5V 1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3A 40 30 20 10 0 1 2 3 4 5 6 7 Gate-to-Source Voltage, VGS -- V 1.0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 5° --2 °C 75 °C 25 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 7 Switching Time, SW Time -- ns 5 VDD=10V VGS=4.5V td(off) 3 tf 2 1000 tr 7 5 td(on) 3 2 0.1 30 20 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT13207 1.6 1.8 IT13202 --40 --20 0 20 40 60 80 100 120 140 160 IT13997 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT13999 VGS -- Qg 4.5 VDS=10V ID=6A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 1.4 10 0.01 0.2 5 7 10 IT13998 Drain Current, ID -- A 1.2 5A =1. , ID V 5 . =2 VGS 3.0A , I D= V 0 . =4 3.0A VGS , I D= V 5 . =4 VGS 40 3 2 2 0.1 0.01 1.0 50 10 7 5 3 0.8 Ambient Temperature, Ta -- °C 5 = Ta 0.6 RDS(on) -- Ta 0 --60 8 VDS=10V 2 0.4 IT13996 | yfs | -- ID 10 0.2 60 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1.5A 0 Gate-to-Source Voltage, VGS -- V Ta=25°C 50 7 0 1.0 IT13201 RDS(on) -- VGS 60 0 2 Ta=7 5°C 25°C --25°C 0 3 --25°C 2 4 25°C 3 5 Ta=7 5°C 1.8V Drain Current, ID -- A 4 VDS=10V V 2.0 3.5V Drain Current, ID -- A 5 ID -- VGS 7 2.5V 4.5V 4.0V 6 0 1 2 3 4 5 6 Total Gate Charge, Qg -- nC 7 IT13209 No. A1315-3/7 EMH2412 ASO 2 10 7 5 3 2 IDP=60A 10 ID=6A DC 10 0 1m μs s ms 0m s 10 op era tio 1.0 7 5 3 2 0.1 7 5 3 2 PW≤10μs Allowable Power Dissipation, PD -- W Drain Current, ID -- A 100 7 5 3 2 Operation in this area is limited by RDS(on). n( Ta =2 5° C) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 PD -- Ta 1.6 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13983 When mounted on ceramic substrate (900mm2×0.8mm) 1.4 1.3 1.2 1.0 To t 0.8 1u al ni di ss t ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13984 No. A1315-4/7 EMH2412 Embossed Taping Specification EMH2412-TL-H No. A1315-5/7 EMH2412 Outline Drawing EMH2412-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A1315-6/7 EMH2412 Note on usage : Since the EMH2412 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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