IRFHM831PbF HEXFET® Power MOSFET VDS 30 V RDS(on) max 7.8 m Qg (typical) RG (typical) 7.3 0.5 nC ID 40h A (@VGS = 10V) (@Tc(Bottom) = 25°C) : : PQFN 3.3mm x 3.3mm Applications • Control MOSFET for Buck Converters Features and Benefits Benefits Features Low Charge (typical 7.3nC) Low Thermal Resistance to PCB (<4.7°C/W) 100% Rg tested Low Profile (<1.0mm) Lower Switching Losses Enable Better Thermal Dissipation Increased Reliability results in Increased Power Density ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFHM831TRPbF IRFHM831TR2PbF Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity PQFN 3.3mm x 3.3mm Tape and Reel 4000 PQFN 3.3mm x 3.3mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 30 ±20 14 11 40 h 28 96 2.5 27 0.02 -55 to + 150 Units V A W W/°C °C Notes through are on page 9 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM831PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Output Charge Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 82 ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 6.6 10.7 1.8 -6.8 ––– ––– ––– ––– ––– 16 7.3 1.7 0.9 2.5 2.2 3.4 5.1 Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 12A 7.8 mΩ VGS = 4.5V, ID = 12A 12.6 2.35 V VDS = VGS, ID = 25μA ––– mV/°C 1.0 VDS = 24V, VGS = 0V μA 150 VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 15V, ID = 12A ––– nC VGS = 10V, VDS = 15V, ID = 12A 11 ––– VDS = 15V ––– VGS = 4.5V nC ––– ID = 12A ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 0.5 6.9 12 6.2 4.7 1050 190 80 ––– ––– ––– ––– ––– ––– ––– ––– Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ΔVGS(th) IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e e Ω ns pF VDD = 15V, VGS = 4.5V ID = 12A RG=1.8Ω See Fig.15 VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR Diode Characteristics c IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Typ. ––– ––– d Min. Typ. Max. Units ––– ––– 40 ––– c ––– h 96 Units mJ A Max. 50 12 A Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 15V di/dt = 300A/μs ––– ––– 1.0 V ––– 15 22 ns ––– 16 24 nC Time is dominated by parasitic Inductance e e Thermal Resistance RθJC (Bottom) RθJC (Top) Parameter g Junction-to-Ambient g Junction-to-Ambient RθJA RθJA (<10s) 2 f Junction-to-Case f Junction-to-Case www.irf.com © 2014 International Rectifier Typ. ––– Max. 4.7 Units ––– 44 °C/W ––– 50 ––– 32 Submit Datasheet Feedback June 5, 2014 IRFHM831PbF 1000 ≤ 60μs PULSE WIDTH Tj = 25°C TOP 100 BOTTOM VGS 10V 8.0V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V ≤ 60μs PULSE WIDTH Tj = 150°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 10 TOP 100 BOTTOM VGS 10V 8.0V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 10 2.8V 2.8V 1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 150°C 10 TJ = 25°C 1 VDS = 15V ≤ 60μs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 ID = 12A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 10000 40 60 80 100 120 140 160 14 VGS, Gate-to-Source Voltage (V) Coss = C ds + C gd Ciss Coss Crss 100 20 Fig 4. Normalized On-Resistance Vs. Temperature VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Crss = C gd 1000 0 T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 100 Fig 2. Typical Output Characteristics 100 ID= 12A 12 VDS= 24V VDS= 15V VDS= 6.0V 10 8 6 4 2 0 10 1 10 100 0 Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage www.irf.com © 2014 International Rectifier 5 10 15 20 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 3 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID, Drain-to-Source Current (A) 1 Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage Submit Datasheet Feedback June 5, 2014 IRFHM831PbF 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100.0 10.0 TJ = 150°C TJ = 25°C 1.0 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 100μsec 10msec 10 1msec 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 0.1 1.0 1 10 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 50 3.0 VGS(th) Gate threshold Voltage (V) LIMITED BY PACKAGE 30 20 10 0 25 50 75 100 125 2.5 2.0 ID = 1.0A ID = 1.0mA ID = 250μA ID = 25μA 1.5 1.0 0.5 150 -75 TC, Case Temperature (°C) -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature Fig 10. Threshold Voltage Vs. Temperature 10 D = 0.50 Thermal Response ( ZthJC ) ID, Drain Current (A) 40 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 40 EAS, Single Pulse Avalanche Energy (mJ) ( Ω) RDS (on), Drain-to -Source On Resistance m IRFHM831PbF ID = 12A 35 30 25 20 15 TJ = 125°C 10 5 TJ = 25°C 200 I D 3.1A 6.4A BOTTOM 12A TOP 160 120 80 40 0 0 2 4 6 8 10 12 14 16 18 20 25 VGS, Gate-to-Source Voltage (V) 50 75 100 125 Starting TJ, Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp 150 www.irf.com © 2014 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback June 5, 2014 IRFHM831PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform Submit Datasheet Feedback June 5, 2014 IRFHM831PbF PQFN 3.3x3.3 Outline Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3x3.3 Part Marking 3.3x3.3 PQFN PART MARKING DETAIL INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) :::: !;99! ::::: PIN 1 IDENTIFIER PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM831PbF PQFN 3.3x3.3 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko P1 W W1 QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE DIMENSION (MM) MIN MAX 3.50 3.70 3.50 3.70 1.10 7.90 1.30 8.10 .043 .311 .051 .319 11.80 12.20 .465 .480 12.30 12.50 .484 .492 Qty Reel Diameter CODE Ao Bo Ko W P1 DIMENSION (INCH) MIN MAX .138 .146 .138 .146 4000 13 Inches DESCRIPTION Dimension des ign to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM831PbF Qualification Information † †† Qualification level Moisture Sensitivity Level RoHS Compliant Industrial ††† (per JEDEC JESD47F guidelines) MSL1 PQFN 3.3mm x 3.3mm ††† (per JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.69mH, RG = 50Ω, IAS = 12A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continouous current based on maximum allowable junction temperature. Package is limited to 40A by production test capability. Revision History Date 5/14/2014 6/5/2014 Comment • Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259) • Updated Package outline on page 7. • Updated Tape and Reel on page 8. • Updated data sheet based on corporate template. • Updated schematic on page1 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014