Renesas CT30VM-8 Mitsubishi insulated gate bipolar transistor Datasheet

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VM-8
STROBE FLASHER USE
CT30VM-8
OUTLINE DRAWING
Dimensions in mm
1.3
1.5MAX.
8.6 ± 0.3
9.8 ± 0.5
r
1.5MAX.
10.5MAX.
13.2 ± 0.5
1
0.5
0.5
w
e
wr
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
q
¡VCES ................................................................................ 400V
¡ICM .................................................................................... 180A
4.5
q
2.5
2.6 ± 0.4
2.5
e
TO-220C
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
Conditions
VCES
VGES
VGEM
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
VGE = 0V
VCE = 0V, See notice 4
VCE = 0V, tw = 0.5s
ICM
Tj
Tstg
Collector current (Pulsed)
Junction temperature
Storage temperature
See figure 1
ELECTRICAL CHARACTERISTICS
Ratings
Unit
400
±30
±40
V
V
V
180
–40 ~ +150
–40 ~ +150
A
°C
°C
(Tj = 25°C)
Symbol
Parameter
V(BR)CES
ICES
Collector-emitter breakdown voltage
Collector-emitter leakage current
IGES
VGE(th)
Gate-emitter leakage current
Gate-emitter threshold voltage
Test conditions
Limits
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
Min.
450
—
Typ.
—
—
Max.
—
10
VGE = ±40V, VCE = 0V
VCE = 10V, IC = 1mA
—
—
—
—
±0.1
7.0
Unit
V
µA
µA
V
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VM-8
STROBE FLASHER USE
MAXIMUM PULSE COLLECTOR CURRENT
200
CM = 1000µF
160
TC <
= 50°C
120
80
TC <
= 70°C
40
0
0
10
20
30
MAXIMUM PULSE COLLECTOR CURRENT
2000
MAIN CAPACITOR CM (µF)
PULSE COLLECTOR CURRENT ICM (A)
PERFORMANCE CURVES
40
1600
1200
800
400
VCM = 350V
TC <
= 70°C
VGE >
= 28V
0
120
50
GATE-EMITTER VOLTAGE VGE (V)
140
160
180
200
220
PULSE COLLECTOR CURRENT ICP (A)
Figure 1
Figure 2
APPLICATION EXAMPLE
TRIGGER Vtrig
SIGNAL
IXe
CM
+
–
Vtrig
VCM
IGBT GATE VG
VOLTAGE
RG
VCE
Xe TUBE
CURRENT
VG
Ixe
IGBT
RECOMMEND CONDITION
MAXIMUM CONDITION
VCM = 330V
IP = 160A
CM = 800µF
VGE = 28V
360V
180A
1000µF
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if RG ≥ 30Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(Ixe ≤ 180A : full luminescence condition) of main condenser (CM=1000µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999
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