Diodes BS870 N-channel enhancement mode field effect transistor Datasheet

BS870
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
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Mechanical Data
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Case: SOT-23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
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Drain
SOT-23
D
Gate
TOP VIEW
S
G
Source
Equivalent Circuit
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS ≤ 1.0MΩ
Gate-Source Voltage
Drain Current (Note 1)
Thermal Characteristics
Continuous
Continuous
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol
VDSS
VDGR
VGSS
ID
Value
60
60
±20
250
Units
V
V
V
mA
Value
300
417
-55 to +150
Units
mW
°C/W
°C
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
TOP VIEW
Symbol
Pd
RθJA
Tj, TSTG
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
60
⎯
⎯
80
⎯
⎯
⎯
0.5
±10
V
µA
nA
VGS = 0V, ID = 100μA
VDS = 25V, VGS = 0V
VGS = ±15V, VDS = 0V
VGS(th)
RDS (ON)
ID(ON)
gFS
1.0
⎯
⎯
80
2.0
3.5
1.0
⎯
3.0
5.0
0.5
⎯
V
Ω
A
mS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.2A
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
Ciss
Coss
Crss
⎯
⎯
⎯
22
11
2.0
50
25
5.0
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
tD(ON)
tD(OFF)
⎯
⎯
2.0
5.0
20
20
ns
ns
VES = 10V, RL = 150Ω,
VDS = 10V, RD = 100Ω
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BS870
Document number: DS11302 Rev. 14 - 2
1 of 3
www.diodes.com
May 2008
© Diodes Incorporated
BS870
7
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
,
ID DRAIN-SOURCE CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
0
2
1
4
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
4
3
2
1
0
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
0.2
1.0
6
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5
0
5
2.0
1.5
1.0
0.5
0
-55
6
70 95
-30
-5
20
45
120 145
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance vs. Junction Temperature
5
4
3
2
1
0
0
2
4
6
8
10 12 14 16 18
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
400
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
0
25
50
75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Max Power Dissipation vs. Ambient Temperature
BS870
Document number: DS11302 Rev. 14 - 2
2 of 3
www.diodes.com
May 2008
© Diodes Incorporated
BS870
Ordering Information
(Note 5)
Part Number
BS870-7-F
Notes:
Case
SOT-23
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Kxx = Product Type Marking Code, K70 or K6Z
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Package Outline Dimensions
A
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
F
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
0°
8°
α
All Dimensions in mm
B C
TOP VIEW
G
H
K
M
J
F
D
L
Suggested Pad Layout
Y
Z
G
C
X
Dimensions Value (in mm)
Z
3.4
G
0.7
X
0.9
Y
1.4
C
2.0
E
0.9
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
BS870
Document number: DS11302 Rev. 14 - 2
3 of 3
www.diodes.com
May 2008
© Diodes Incorporated
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