Hittite HMC292 Gaas mmic double-balanced mixer, 18 - 32 ghz Datasheet

HMC292
v02.1202
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
Typical Applications
Features
The HMC292 is ideal for:
Input IP3: +19 dBm
• Microwave Point to Point Radios
LO / RF Isolation: 36 dB
• LMDS
Passive: No DC Bias Required
• SATCOM
Small Size: 0.58 mm x 1.04 mm
Functional Diagram
General Description
The HMC292 chip is a miniature passive GaAs
MMIC double-balanced mixer which can be used
as an upconverter or downconverter from 18 - 32
GHz in a small chip area of 0.66 mm2. Excellent
isolations are provided by on-chip baluns, which
require no external components and no DC bias.
All data is measured with the chip in a 50 ohm
test fixture connected via 0.076 mm (3 mil) ribbon
bonds of minimal length <0.31 mm (<12 mils).
MIXERS - CHIP
5
Electrical Specifications, TA = +25° C
LO = +13 dBm
LO = +13 dBm
Parameter
Units
Min.
5 - 70
Typ.
Max.
Min.
Typ.
Max.
Frequency Range, RF & LO
20 - 30
18 - 32
GHz
Frequency Range, IF
DC - 8
DC - 8
GHz
Conversion Loss
7.5
9
8
10
dB
Noise Figure (SSB)
7.5
9
8
10
dB
LO to RF Isolation
31
38
30
36
dB
LO to IF Isolation
33
40
30
40
dB
RF to IF Isolation
20
25
17
25
dB
IP3 (Input)
17
19
15
19
dB
IP2 (Input)
45
50
42
50
dBm
1 dB Gain Compression (Input)
8
12
8
12
dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC292
v02.1202
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
Conversion Gain vs.
Temperature @ LO = +13 dBm
Isolation @ LO = +13 dBm
0
0
RF/IF
-10
-5
ISOLATION (dB)
CONVERSION GAIN (dB)
+85 C
-10
-55 C
+25 C
-20
-30
-40
-15
-50
LO/IF
LO/RF
-60
-20
20
25
30
15
35
20
35
0
0
+15 dBm
+13 dBm
-5
RETURN LOSS (dB)
CONVERSION GAIN (dB)
30
RF & LO
Return Loss @ LO = +13 dBm
Conversion Gain vs. LO Drive
-10
+10 dBm
-15
-5
-10
-15
RF
+8 dBm
5
LO
-20
-20
15
20
25
30
10
35
20
30
40
FREQUENCY (GHz)
FREQUENCY (GHz)
Upconverter Performance
Conversion Gain @ LO = +13 dBm
IF Bandwidth @ LO = +13 dBm
0
0
CONVERSION GAIN (dB)
IF CONVERSION GAIN & RETURN LOSS (dB)
25
FREQUENCY (GHz)
FREQUENCY (GHz)
MIXERS - CHIP
15
-5
Return Loss
-10
Conversion Gain
-15
-20
-5
-10
-15
-20
0
2
4
6
IF FREQUENCY (GHz)
8
10
15
20
25
30
35
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 - 71
HMC292
v02.1202
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
Input IP3 vs.
Temperature @ LO = +13 dBm
Input IP3 vs. LO Drive
25
25
+85C
+13 dBm
20
INPUT IP3 (dBm)
INPUT IP3 (dBm)
20
15
10
+10 dBm
5
15
+25C
10
-55C
5
+8 dBm
0
0
15
20
25
30
15
35
20
25
30
35
FREQUENCY (GHz)
FREQUENCY (GHz)
Input IP2 vs.
Temperature @ LO = +13 dBm
Input IP2 vs. LO Drive
80
80
+10 dBm
70
70
+85C
+13 dBm
60
INPUT IP2 (dBm)
60
INPUT IP2 (dBm)
MIXERS - CHIP
5
-5
-5
50
40
30
+8 dBm
50
40
-55C
30
20
20
10
10
+25C
0
0
15
20
25
30
15
35
20
25
30
35
FREQUENCY (GHz)
FREQUENCY (GHz)
Input P1dB vs.
Temperature @ LO = +13 dBm
MxN Spurious Outputs
15
nLO
+25 C
INPUT P1dB
13
mRF
0
1
2
3
4
0
xx
11
1
17
0
39
70
77
76
3
93
69
86
4
>110
>110
>110
11
-55 C
+85 C
9
2
7
5
15
20
25
FREQUENCY (GHz)
5 - 72
30
35
RF = 21 GHz @ -10 dBm
LO = 22 GHz @ +13 dBm
All values in dBc below the IF power level.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC292
v02.1202
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
Absolute Maximum Ratings
RF / IF Input
+13 dBm
LO Drive
+27 dBm
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
3. TYPICAL BOND PAD IS .004” SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
MIXERS - CHIP
5
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5 - 73
HMC292
v02.1202
MICROWAVE CORPORATION
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
MMIC Assembly Techniques
Ribbon Bond
Ribbon Bond
MIXERS - CHIP
5
5 - 74
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and
from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6
mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4
mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate
spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) of minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on the RF ports.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
v02.1202
MICROWAVE CORPORATION
HMC292
GaAs MMIC DOUBLE-BALANCED
MIXER, 18 - 32 GHz
GaAs Precautions
MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
Handling
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 4060 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with
a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A
minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than
12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
5
MIXERS - CHIP
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
5 - 75
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