KODENSHI OPA9420AL Infrared led chip Datasheet

Infrared LED Chip
OPA9420AL
GaAs/GaAs
1. Material
Substrate
GaAs
Epitaxial Layer GaAs
(N Type)
(P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Aluminum Alloy
Parameter Symbol Min
3. Electro-Optical
Characteristics Forward Voltage VF
Max
1.45
Unit Condition
IF=20mA
V
IR=10uA
V
VR
8
1.13
A 1.05
1.13
1.21
B
1.28
C 1.21
1.36
D 1.28
Po
mW IF=20mA
1.44
E 1.36
1.52
F 1.44
1.59
G 1.52
1.69
G1 1.59
λP
940
nm IF=20mA
Wavelength
∆λ
45
nm IF=20mA
※ Note : Power is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
----------------------------- 7mil x 7mil
----------------------------- 8mil x 8mil
----------------------------- 100um
------------------------------- 9.0mil (8mil Available)
------------------------------- 4.7mil
(b)
(d)
(e)
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
www.auk.co.kr
N Epi
(a)
P Epi
(c)
Substrate
Reverse Voltage
Power
Typ
1.3
N Side Electrode
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