Seme LAB D1021UK Metal gate rf silicon fet Datasheet

TetraFET
D1021UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
125W – 28V – 400MHz
PUSH–PULL
A
C
B
(2 pls)
K
3
2
1
E
D
5
4
G (4 pls)
F
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H
J
M
I
N
• SUITABLE FOR BROAD BAND APPLICATIONS
DK
PIN 1
SOURCE (COMMON) PIN 2
DRAIN 1
• LOW Crss
PIN 3
DRAIN 2
GATE 2
• SIMPLE BIAS CIRCUITS
PIN 5
GATE 1
PIN 4
• LOW NOISE
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5°
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
350W
70V
±20V
20A
–65 to 150°C
200°C
* Per Side
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 11/00
D1021UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
PER SIDE
BVDSS
Drain–Source
V
VGS = 0
ID = 100mA
VDS = 28V
VGS = 0
4
mA
VGS = 20V
VDS = 0
1
mA
VGS(th) Gate Threshold Voltage *
ID = 10mA
VDS = VGS
7
V
gfs
VDS = 10V
ID = 4A
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance *
70
1
3.2
S
13
dB
50
%
20:1
—
TOTAL DEVICE
GPS
Common Source Power Gain
PO = 125W
Drain Efficiency
VDS = 28V
VSWR Load Mismatch Tolerance
f = 400MHz
h
IDQ = 1.6A
PER SIDE
Ciss
Input Capacitance
VDS = 28V
VGS = –5V f = 1MHz
240
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
120
pF
Crss
Reverse Transfer Capacitance
VDS = 28V
VGS = 0
f = 1MHz
10
pF
* Pulse Test:
Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Max. 0.5°C / W
Prelim. 11/00
D1021UK
3RXW
:
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9GV 9
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3RXW
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:
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*DLQ
G%
3LQ:
Figure 1.
Power Output and Efficiency vs. Input Power
3RXW
*DLQ
Figure 2.
Power Output and Gain vs. Input Power
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G%F
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,GT $
9GV 9
3RXW:3(3
,0'
Figure 3
IMD vs.Power Output
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 11/00
D1021UK
=6RSW
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M;
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=6
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5
5
I
0+]
Semelab plc.
,PSHGDQFHPHDVXUHGVRXUFHWRVRXUFH
=6RSW
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Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
=/RSW
Prelim. 11/00
D1021UK
1 5
+ 2 8 V
L 2
1 .5 K
G a te -B ia s
1 0 0 K
2 2 K
6 x 4 m m
c o n ta c t
p a d
D 1 0 2 1 U K
1 0 0 u F
6 8 0 p F
1 0 0 n F
6 x 4 m m
c o n ta c t p a d
L 1
6 2 0 p F
6 "
T 1
2 -1 8 p F
6 2 0 p F
2 7 p F
T 2
2 -1 8 p F
1 0 p F
1 -3 .5 p F
6 #
T 3
6 2 0 p F
6 x 4 m m
c o n ta c t
p a d
T 6
6 2 0 p F
2 -1 8 p F
6 x 4 m m
c o n ta c t p a d
D 1 0 2 1 U K
400MHz Test Fixture
T1
T2,3,4,5
T6
11cm 50 Ohm UT47 semi-rigid coax on Siemens B62152A1X1 2 hole ferrite core
9cm 15 Ohm UT85-15 semi-rigid coax
9.7cm 50 Ohm UT85 semi-rigid coax
L1
L2
7 Turns 19swg enamelled copper wire 3.5mm internal diameter
5.5 Turns 19swg enamelled copper wire on Fair-rite FT50 ferrite core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 11/00
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