Diotec BC808-25W Surface mount si-epitaxial planartransistor Datasheet

BC 807W / BC 808W
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2±0.1
1±0.1
Type
Code
1
1.25±0.1
3
2.1±0.1
0.3
PNP
Power dissipation – Verlustleistung
225 mW
Plastic case
Kunststoffgehäuse
SOT-323
Weight approx. – Gewicht ca.
2
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1.3
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Dimensions / Maße in mm
1=B
2=E
3=C
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC 807W
BC 808W
Collector-Emitter-voltage
B open
- VCE0
45 V
25 V
Collector-Emitter-voltage
B shorted
- VCES
50 V
30 V
Collector-Base-voltage
E open
- VCB0
50 V
30 V
Emitter-Base-voltage
C open
- VEB0
5V
Power dissipation – Verlustleistung
Ptot
225 mW 1)
Collector current – Kollektorstrom (DC)
- IC
500 mA
Peak Coll. current – Kollektor-Spitzenstrom
- ICM
1000 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
IEM
1000 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics, Tj = 25/C
Kennwerte, Tj = 25/C
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 100 mA
- VCE = 1 V, - IC = 500 mA
- VCE = 1 V, - IC = 100 mA
1
BC807W
BC808W
hFE
100
–
600
hFE
40
–
–
Group -16W
hFE
100
160
250
Group -25W
hFE
160
250
400
Group -40W
hFE
250
400
600
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
4
01.11.2003
General Purpose Transistors
BC 807W / BC 808W
Characteristics, Tj = 25/C
Kennwerte, Tj = 25/C
Min.
Typ.
Max.
–
–
0.7 V
- VBEsat
–
–
1.3 V
- VBE
–
–
1.2 V
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 500 mA, - IB = 50 mA
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung
- IC = 500 mA, - IB = 50 mA
Base-Emitter voltage – Basis-Emitter-Spannung
- VCE = 1 V, - IC = 500 mA
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 20 V
- ICB0
–
–
100 nA
IE = 0, - VCB = 20 V, Tj = 150/C
- ICB0
–
–
5 :A
- IEB0
–
–
100 nA
80 MHz
100 MHz
–
–
10 pF
–
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom
verstärkungsgruppen pro Typ
BC 807-16W = 5A
620 K/W 1)
BC 817W / BC 818W
BC 807-25W = 5B
BC 807-40W = 5C
BC 808-25W = 5F
BC 808-40W = 5G
BC 807W = 5D
BC 808-16W = 5E
BC 808W = 5H
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
5
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