Infineon BF770A Npn silicon rf transistor Datasheet

BF 770A
NPN Silicon RF Transistor
3
For IF amplifiers in TV-sat tuners
and for VCR modulators
2
1
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BF 770A
LSs
Pin Configuration
1=B
2=E
Package
3=C
SOT-23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
50
Base current
IB
6
Total power dissipation, TS 63 °C F)
Ptot
300
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Value
Unit
V
mA
Thermal Resistance
Junction - soldering point
RthJS
290
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
1
Oct-26-1999
BF 770A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
10
µA
hFE
50
100
200
-
DC characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
2
Oct-26-1999
BF 770A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
4.5
6
-
Ccb
-
0.58
0.9
Cce
-
0.23
-
Ceb
-
1.7
-
AC characteristics (verified by random sampling)
Transition frequency
fT
GHz
IC = 30 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
dB
F
IC = 5 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
2
-
f = 1.8 GHz
-
3.3
-
f = 900 MHz
-
13.5
-
f = 1.8 GHz
-
8.5
-
-
12
-
-
6.5
-
Power gain, maximum available 1)
Gma
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
|S21e|2
Transducer gain
IC = 30 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz
f = 1.8 GHz
1G
ma
= |S21 / S12 | (k-(k2-1)1/2)
3
Oct-26-1999
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