ON MURS110T3 Surface mount ultrafast power rectifier Datasheet

MURS120T3 Series
Preferred Devices
Surface Mount Ultrafast
Power Rectifiers
MURS105T3, MURS110T3, MURS115T3,
MURS120T3, MURS140T3, MURS160T3
Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
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ULTRAFAST RECTIFIERS
1.0 AMPERE, 50−600 VOLTS
Features
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C)
Pb−Free Packages are Available
SMB
CASE 403A
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 95 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
MARKING DIAGRAM
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
AYWW
U1x G
G
• Polarity: Polarity Band Indicates Cathode Lead
A
Y
WW
U1
=
=
=
=
Assembly Location
Year
Work Week
Device Code
x = A, B, C, D, G, or J
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
See general marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 9
1
Publication Order Number:
MURS120T3/D
MURS120T3 Series
MAXIMUM RATINGS
MURS
Symbol
105T3
110T3
115T3
120T3
140T3
160T3
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
150
200
400
600
V
Average Rectified Forward Current
IF(AV)
1.0 @ TL = 155°C
2.0 @ TL = 145°C
1.0 @ TL = 150°C
2.0 @ TL = 125°C
A
Non−Repetitive Peak Surge Current, (Surge applied
at rated load conditions halfwave, single phase, 60 Hz)
IFSM
40
35
A
Rating
Operating Junction Temperature
TJ
*65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
MURS
Rating
Symbol
Thermal Resistance, Junction−to−Lead
(TL = 25°C)
105T3
115T3
110T3
120T3
140T3
160T3
13
RqJL
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ = 25°C)
(Rated DC Voltage, TJ = 150°C)
iR
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms)
(iF = 0.5 A, iR = 1.0 A, IR to 0.25 A)
trr
Maximum Forward Recovery Time
(iF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)
tfr
0.875
0.71
1.25
1.05
2.0
50
5.0
150
35
25
75
50
25
50
V
mA
ns
ns
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
MURS105T3
MURS105T3G
SMB
U1A
SMB
(Pb−Free)
MURS110T3
MURS110T3G
SMB
U1B
SMB
(Pb−Free)
MURS115T3
MURS115T3G
SMB
U1C
SMB
(Pb−Free)
MURS120T3
MURS120T3G
SMB
U1D
SMB
U1G
SMB
(Pb−Free)
MURS160T3
MURS160T3G
2500 Units / Tape & Reel
SMB
(Pb−Free)
MURS140T3
MURS140T3G
Shipping†
SMB
U1J
SMB
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MURS120T3 Series
MURS105T3, MURS110T3, MURS115T3, MURS120T3
10
IR, REVERSE CURRENT ( mA)
7.0
5.0
3.0
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
175°C
100°C
2.0
TC = 25°C
1.0
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
TJ = 175°C
TJ = 100°C
0.08
0.04
0.02
0.008
0.004
0.002
TJ = 25°C
0.7
0
20
40
0.5
60
80
100
120
140
160
180 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied VR is sufficiently
below rated VR.
0.3
0.2
50
0.1
45
0.07
NOTE: TYPICAL
CAPACITANCE AT
0 V = 45 pF
C, CAPACITANCE (pF)
40
0.05
0.03
0.02
35
30
25
20
15
10
0.01
5.0
0.3 0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
10
20
Figure 1. Typical Forward Voltage
30
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (VOLTS)
10
RATED VOLTAGE APPLIED
RqJC = 13°C/W
TJ = 175°C
9.0
8.0
7.0
6.0
5.0
4.0
DC
3.0
2.0
SQUARE WAVE
1.0
0
80
90
100
110
120
130
140
150
160
170
180
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Capacitance
5.0
TJ = 175°C
4.0
5.0
I
10
(CAPACITANCELOAD) PK + 20
I
3.0
AV
2.0
DC
SQUARE WAVE
1.0
0
0
0.5
1.0
1.5
2.0
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Case
Figure 5. Power Dissipation
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3
2.5
MURS120T3 Series
MURS140T3, MURS160T3
10
IR, REVERSE CURRENT ( mA)
7.0
175°C
5.0
100°C
3.0
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
TC = 25°C
2.0
1.0
0.7
400
200
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.08
0.04
0.02
0.008
0.004
TJ = 175°C
TJ = 100°C
TJ = 25°C
0
200
100
0.5
300
400
500
600
700
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied VR is sufficiently
below rated VR.
0.3
0.2
25
0.1
0.07
NOTE: TYPICAL
CAPACITANCE AT
0 V = 24 pF
C, CAPACITANCE (pF)
20
0.05
0.03
0.02
15
10
5.0
0.01
0.3 0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
0
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
4.0
8.0
Figure 6. Typical Forward Voltage
12
16
20
24
28
32
36
40
VR, REVERSE VOLTAGE (VOLTS)
10
RATED VOLTAGE APPLIED
RqJC = 13°C/W
TJ = 175°C
9.0
8.0
7.0
6.0
5.0
4.0
DC
3.0
2.0
SQUARE WAVE
1.0
0
0
20
40
60
80
100
120
140
160
180
200
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 8. Typical Capacitance
5.0
4.0
5.0
10
(CAPACITANCE LOAD)
I
PK + 20
I
SQUARE WAVE
AV
3.0
DC
TJ = 175°C
2.0
1.0
0
0
0.5
1.0
1.5
2.0
TC, CASE TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Current Derating, Case
Figure 10. Power Dissipation
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4
2.5
MURS120T3 Series
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE G
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.13
2.45
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.084
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.096
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MURS120T3/D
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