Central CP221 Small signal transistor Datasheet

PROCESS
CP221
Central
Small Signal Transistor
NPN- High Voltage Darlington Transistor Chip
TM
Semiconductor Corp.
PROCESS DETAILS
Process
EPITAXIAL BASE
Die Size
39.5 X 39.5 MILS
Die Thickness
9.8 MILS
Base Bonding Pad Area
3.9 x 5.1 MILS
Emitter Bonding Pad Area
7.9 x 3.9 MILS
Top Side Metalization
Al - 24,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
7,290
PRINCIPAL DEVICE TYPES
CZT2000
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (1-August 2002)
Central
TM
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CP221
Typical Electrical Characteristics
R1 (1-August 2002)
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