IRF IRFEA240 Hexfet power mosfet surface mount (lcc-28) Datasheet

PD - 93978
HEXFET® POWER MOSFET
SURFACE MOUNT (LCC-28)
IRFEA240
200V, N-CHANNEL
Product Summary
Part Number
IRFEA240
RDS(on)
0.18Ω
BVDSS
200V
ID
11A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
LCC-28
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Units
11
7.0
44
50
0.4
±20
80
11
5.0
5.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5 s)
0.89
g
For footnotes refer to the last page
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1
10/20/00
IRFEA240
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
200
—
—
V
—
0.25
—
V/°C
—
—
0.18
Ω
2.0
6.0
—
—
—
—
—
—
4.0
—
25
250
V
S( )
Test Conditions
VGS = 0V, ID = 1mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 11A ➃
nC
VDS = VGS, ID = 250µA
VDS = 25V, IDS = 11A ➃
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 11A
VDS = 100V
ns
VDD = 100V, ID = 11A
RG = 9.1Ω
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
84
17
41
25
196
80
130
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1340
434
134
—
—
—
nA
nH
pF
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
11
44
A
VSD
t rr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.5
470
6.5
V
nS
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 11A, VGS = 0V ➃
Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
2.5
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRFEA240
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
4.5V
0.1
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
4.5V
1
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
TJ = 25 ° C
1
V DS = 15
50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
5.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
4.0
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
ID = 11A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFEA240
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
2000
Ciss
1500
Coss
1000
Crss
500
ID = 11 A
VDS = 160V
VDS = 100V
VDS = 40V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
20
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
60
80
100
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
ID, Drain-to-Source Current (A)
1000
10
TJ = 25 ° C
1
V GS = 0 V
0.7
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
TJ = 150 ° C
0.1
0.2
1.2
1.7
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
2500
20
VGS , Gate-to-Source Voltage (V)
3000
2.2
10
1ms
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFEA240
12
VGS
10
I D , Drain Current (A)
RD
VDS
D.U.T.
RG
+
-VDD
8
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
4
Fig 10a. Switching Time Test Circuit
VDS
2
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFEA240
15V
L
VDS
D .U .T.
RG
IA S
10V
20V
D R IV E R
+
- VD D
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
200
TOP
160
BOTTOM
ID
5.0A
7.0A
11A
120
80
40
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFEA240
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ 11A, di/dt ≤ 270 A/µs,
maximum junction temperature.
‚ VDD = 25 V, Starting TJ = 25°C, L=1.25mH
Peak IAS = 11A, RG= 25Ω
„ Pulse width ≤ 400 µs; Duty Cycle ≤ 2%
VDD ≤ 200V, TJ ≤ 150°C
Case Outline and Dimensions — LCC-28
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Data and specifications subject to change without notice. 10/00
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