MBRF10H150CTG Switch-mode Power Rectifier 150 V, 10 A Features and Benefits • • • • • • www.onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total (5 A Per Diode Leg) Guard−Ring for Stress Protection This is a Pb−Free Device SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 150 VOLTS 1 2, 4 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 3 MARKING DIAGRAM Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220 FULLPAK] CASE 221AH 1 2 AYWW B10H150G AKA 3 MAXIMUM RATINGS A Y WW B10H150 G AKA Please See the Table on the Following Page = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 2 1 Publication Order Number: MBRF10H150CT/D MBRF10H150CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit VRRM VRWM VR 150 V IF(AV) 5 10 A IFSM 150 A Operating Junction Temperature (Note 1) TJ −20 to +150 °C Storage Temperature Tstg −65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10000 V/ms > 400 > 8000 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 142°C (Per Leg) (Per Device) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance − Junction−to−Case Symbol Value Unit RqJC 2.5 °C/W Typ Max Unit ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 5 A, TC = 25°C) (IF = 5 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.85 0.63 0.69 45 20 mA mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Device Order Number MBRF10H150CTG Package Type Shipping† TO−220FP (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. www.onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MBRF10H150CTG 100 TJ = 100°C TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 TJ = 25°C 1 0.1 0 0.2 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) TJ = 125°C 1.2 1.4 1.6 1.8 2 2.2 TJ = 125°C 1.0E−02 TJ = 100°C 1.0E−04 TJ = 100°C 1.0E−03 1.0E−05 1.0E−04 TJ = 25°C 1.0E−06 TJ = 25°C 1.0E−05 1.0E−07 1.0E−06 0 10 20 30 40 50 60 70 80 90 100110 120130140150 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 10 9 dc 7 SQUARE WAVE 5 4 3 2 1 130 0 10 20 30 40 50 60 70 80 90 100110 120130140150 VR, REVERSE VOLTAGE (V) PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 1 1.0E−01 1.0E−03 0 125 0.8 Figure 2. Maximum Forward Voltage 1.0E−02 6 0.4 0.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 8 TJ = 100°C TJ = 125°C 10 135 140 145 150 155 10 TJ = 150°C 9 8 7 6 5 SQUARE 4 3 dc 2 1 0 0 1 2 3 4 5 6 7 8 9 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3 10 MBRF10H150CTG 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 0 50 100 150 VR, REVERSE VOLTAGE (V) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 10 D = 0.5 1 0.1 0.2 0.1 0.05 0.01 P(pk) t1 0.01 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 8. Thermal Response Junction−to−Case for MBRF10H150CTG www.onsemi.com 4 100 1000 MBRF10H150CTG PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F A B E A P E/2 0.14 Q D M B A H1 M A1 C NOTE 3 1 2 3 L L1 3X 3X SEATING PLANE c b b2 0.25 M B A M C A2 e SIDE VIEW FRONT VIEW SECTION D−D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.90 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.60 7.10 12.50 14.73 --2.80 3.00 3.40 2.80 3.20 A NOTE 6 NOTE 6 H1 D D A SECTION A−A ALTERNATE CONSTRUCTION FULLPAK is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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