Diodes MMBT4126-7-F Pnp small signal surface mount transistor Datasheet

SPICE MODEL: MMBT4126
MMBT4126
Lead-free
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Planar Die Construction
SOT-23
Complementary NPN Type Available (MMBT4124)
Ideal for Low Power Amplification and Switching
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
A
Lead Free/RoHS Compliant (Note 2)
C
B
Mechanical Data
B TOP VIEW E
D
E
·
·
·
·
·
·
·
·
·
C
G
Case: SOT-23
H
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
Moisture Sensitivity: Level 1 per J-STD-020C
J
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0°
8°
M
L
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
C
All Dimensions in mm
Marking (See Page 2): K2B
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
Maximum Ratings
E
B
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-4.0
V
Collector Current - Continuous (Note 1)
IC
-200
mA
Power Dissipation (Note 1)
Pd
300
mW
RqJA
417
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
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Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-25
¾
V
IC = -10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-25
¾
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-4.0
¾
V
IE = -10mA, IC = 0
Collector Cutoff Current
ICBO
¾
-50
nA
VCB = -20V, IE = 0V
Emitter Cutoff Current
IEBO
¾
-50
nA
VEB = -3.0V, IC = 0V
hFE
120
60
360
¾
¾
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
-0.40
V
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
¾
-0.95
V
IC = -50mA, IB = -5.0mA
Output Capacitance
Cobo
¾
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain
hfe
120
480
¾
Current Gain-Bandwidth Product
fT
250
¾
MHz
Noise Figure
NF
¾
4.0
dB
OFF CHARACTERISTICS (Note 3)
ON CHARACTERISTICS (Note 3)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Ordering Information
Note:
VCE = 1.0V, IC = -2.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100mA,
RS = 1.0kW, f = 1.0kHz
(Note 4)
Device
Packaging
Shipping
MMBT4126-7-F
SOT-23
3000/Tape & Reel
3. Short duration pulse test used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
K2B
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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MMBT4126
100
400
Note
Note 1 1
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
f = 1MHz
PD, POWER DISSIPATION (mW)
350
300
250
200
150
100
10
Cibo
50
Cobo
1
0.1
0
0
25
50
75
100
125
150
200
175
100
10
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
10
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
1000
hFE, DC CURRENT GAIN
1
TA = 125°C
100
TA = +25°C
TA = -25°C
10
IC
IB = 10
1
0.1
VCE = 1.0V
0.01
1
1
0.1
10
100
1
1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs
Collector Current
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
1.0
0.9
0.8
0.7
0.6
IC
IB = 10
0.5
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
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IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
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