Fairchild BC559BTA Pnp epitaxial silicon transistor Datasheet

BC556/557/558/559/560
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier
• High Voltage: BC556, VCEO = -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
TO-92
1
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Parameter
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics
Symbol
ICBO
hFE
VCE(sat)
Ta = 25°C unless otherwise noted
Value
Units
-80
-50
-30
V
V
V
-65
-45
-30
-5
-100
500
150
-65 ~ 150
V
V
V
V
mA
mW
C
C
Ta = 25C unless otherwise noted
Parameter
Test Condition
VBE(sat)
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
VBE(on)
Base-Emitter On Voltage
fT
Current Gain Bandwidth Product
Cob
NF
Output Capacitance
Noise Figure : BC556/557/558
: BC559/560
: BC559
: BC560
VCB= -30V, IE=0
VCE= -5V, IC=2mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
VCE= -5V, IC= -10mA,
f=10MHz
VCB= -10V, IE=0, f=1MHz
VCE= -5V, IC= -200A
f=1KHz, RG=2K
VCE= -5V, IC= -200A
RG=2Kf=30~15000MHz
Min.
Typ.
110
-600
-90
-250
-700
-900
-660
Max.
Units
-15
800
-300
-650
nA
-750
-800
150
2
1
1.2
1.2
6
10
4
4
2
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
hFE Classification
Classification
hFE
A
110 ~ 220
B
200 ~ 450
© 2012 Fairchild Semiconductor Corporation
BC556/557/558/559/560 Rev. B0
C
420 ~ 800
www.fairchildsemi.com
1
BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor
October 2012
1000
-50
IB = -400A
VCE = -5V
IB = -350A
-40
IB = -300A
-35
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-45
IB = -250A
-30
IB = -200A
-25
-20
IB = -150A
-15
IB = -100A
-10
100
10
IB = -50A
-5
1
-0.1
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-1
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-100
-10
VBE(sat)
-1
VCE = -5V
IC[mA], COLLECTOR CURRENT
IC = -10 IB
-0.1
VCE(sat)
-10
-1
-0.1
-0.01
-0.1
-1
-10
-0.2
-100
-0.4
f=1MHz
IE = 0
1
-1
-10
-100
-1.0
-1.2
1000
VCE = -5V
100
10
-1
-10
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2012 Fairchild Semiconductor Corporation
BC556/557/558/559/560 Rev. B0
-0.8
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
-0.6
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Cob(pF), CAPACITANCE
-10
www.fairchildsemi.com
2
BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
BC556/557/558/559/560 — PNP Epitaxial Silicon Transistor
Physical Dimensions
TO-92
D
Dimensions in Millimeters
© 2012 Fairchild Semiconductor Corporation
BC556/557/558/559/560 Rev. B0
www.fairchildsemi.com
3
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Rev. I62
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