STMicroelectronics BUV48A High power npn silicon transistor Datasheet

BUX48/48A
BUV48A/V48AFI
®
HIGH POWER NPN SILICON TRANSISTORS
■
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
1
3
2
2
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES
■ FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
1
TO-3
TO-218
3
2
DESCRIPTION
The BUX48/A, BUV48A and BUV48AFI are
silicon Multiepitaxial Mesa NPN transistors
mounted respectively in TO-3 metal case, TO-218
plastic package and ISOWATT218 fully isolated
package. They are particulary intended for
switching and industrial applications from single
and tree-phase mains.
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
For TO-3 Package
Others Packages
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
V CER
Value
Unit
BUX48
BUX48A
BUV48A
BUV48AFI
Collector-Emitter Voltage (R BE = 10Ω)
Collector-Emitter Voltage (V BE = 0)
850
1000
V CES
850
1000
V
VCEO
Collector-Emitter Voltage (I B = 0)
400
450
V
V EBO
IC
I CM
I CP
IB
I BM
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current
Collector Peak Current non repetitive (t p <20µs)
Base Current
Base Peak Current
P tot
T stg
Tj
Total Dissipation at T c = 25 o C
Storage Temperature
Max. Operating Junction Temperature
January 2000
TO-3
175
-65 to200
200
7
15
30
55
4
20
TO-218
ISOWATT218
125
55
-65 to 150
-65 to 150
150
150
V
V
A
A
A
A
A
W
C
o
C
o
1/7
BUX48 / BUX48A / BUV48A / BUV48AFI
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
TO-3
TO-218
ISOWATT218
1
1
2.2
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off Current
(V BE = 0)
V CE = rated V CES
V CE = rated V CES ,
I CER
Collector Cut-off Current
(R BE = 10 Ω)
V CE = rated V CER
V CE = rated V CER ,
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
Max.
Unit
T c = 125 o C
200
2
µA
mA
T c = 125 o C
500
4
µA
mA
1
mA
L= 25mH
V CEO(SUS) ∗ Collector-Emitter Sustaining I C = 200 mA
Voltage (I B = 0)
for BUX48
for BUX48A/V48A/V48AFI
V EBO
V CE(sat) ∗
V BE(sat) ∗
Emitter-Base Voltage
(I C = 0)
I E = 50 mA
Collector-Emitter Saturation
Voltage
for BUX48
I C = 10 A
IB = 2 A
I C = 15 A
IB = 4 A
I C = 15 A
IB = 3 A
for BUX48A/V48A/V48AFI
IC = 8 A
I B = 1.6 A
I C = 12 A
I B = 2.4 A
Base-Emitter Saturation
Voltage
Min.
Typ.
400
450
V
V
7
for BUX48
I C = 10 A
IB = 2 A
for BUX48A/V48A/V48AFI
IC = 8 A
I B = 1.6 A
30
V
1.5
3.5
5
V
V
V
1.5
5
V
V
1.6
V
1.6
V
Max.
Unit
1
µs
1
µs
3
µs
3
µs
0.8
µs
0.8
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
RESISTIVE SWITCHING TIMES
Symbol
t on
ts
tf
2/7
Parameter
Turn-on Time
Storage Time
Fall Time
Test Conditions
for BUX48
V CC = 150 V
I C = 10 A
I B1 = 2 A
for BUX48A/V48A/V48AFI
V CC = 150 V
IC = 8 A
I B1 = 1.6 A
for BUX48
V CC = 150 V
I C = 10 A
I B1 = - I B2 = 2 A
for BUX48A/V48A/V48AFI
V CC = 150 V
IC = 8 A
I B1 = - I B2 = 1.6 A
for BUX48
V CC = 150 V
I C = 10 A
I B1 = - I B2 = 2 A
for BUX48A/V48A/V48AFI
V CC = 150 V
IC = 8 A
I B1 = - I B2 = 1.6 A
Min.
Typ.
BUX48 / BUX48A / BUV48A / BUV48AFI
INDUCTIVE SWITCHING TIMES
Symbol
ts
tf
Parameter
Storage Time
Fall Time
Test Conditions
for BUX48
V CC = 300 V
I C = 10 A
L B = 3 µH
V BE = -5 V
I B1 = 2 A
same conditions at T c = 125 o C
for BUX48A/V48A/V48AFI
V CC = 300 V
IC = 8 A
L B = 3 µH
V BE = -5 V
I B1 = 1.6 A
same conditions at T c = 125 o C
for BUX48
V CC = 300 V
I C = 10 A
L B = 3 µH
V BE = -5 V
I B1 = 2 A
same conditions at T c = 125 o C
for BUX48A/V48A/V48AFI
V CC = 300 V
IC = 8 A
L B = 3 µH
V BE = -5 V
I B1 = 1.6 A
same conditions at T c = 125 o C
Min.
Typ.
Max.
Unit
5
µs
µs
5
µs
µs
0.4
µs
µs
0.4
µs
µs
2.7
3
0.16
0.13
3/7
BUX48 / BUX48A / BUV48A / BUV48AFI
TO-3 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
A
P
C
O
N
B
V
E
G
U
D
R
P003F
4/7
BUX48 / BUX48A / BUV48A / BUV48AFI
TO-218 (SOT-93) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
–
16.2
–
0.637
L3
18
L5
0.708
3.95
4.15
L6
0.155
31
0.163
1.220
–
12.2
–
0.480
Ø
4
4.1
0.157
0.161
D
C
A
E
R
L6
L5
H
G
L3
L2
F
¯
R
1 2 3
P025A
5/7
BUX48 / BUX48A / BUV48A / BUV48AFI
ISOWATT218 MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
F3
G
H
L
L1
L2
L3
L4
L5
L6
N
R
DIA
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
mm
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
21.20
19.90
23.60
42.50
5.25
20.75
2.3
0.819
0.752
0.898
1.594
0.191
0.797
0.083
3.7
0.138
9
20.80
19.10
22.80
40.50
4.85
20.25
2.1
0.835
0.783
0.929
1.673
0.207
0.817
0.091
0.181
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
6/7
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
0.354
4.6
3.5
inch
TYP.
0.146
P025C/A
BUX48 / BUX48A / BUV48A / BUV48AFI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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