Renesas HIT562 Silicon pnp epitaxial Datasheet

Preliminary Datasheet
HIT562
R07DS0448EJ0400
(Previous: REJ03G1503-0300)
Rev.4.00
Jun 14, 2011
Silicon PNP Epitaxial
Features
 Low frequency power amplifier
 Complementary pair with HIT468
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
Ratings
–45
Unit
V
VCEO
VEBO
–25
–6
V
V
–1.0
A
IC (peak) *
PC
Tj
–1.5
0.8
150
A
W
C
Tstg
–55 to +150
C
IC
1
Note : 1. PW  10 ms, Duty cycle  20%
R07DS0448EJ0400 Rev.4.00
Jun 14, 2011
Page 1 of 4
HIT562
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Base to emitter saturation voltage
R07DS0448EJ0400 Rev.4.00
Jun 14, 2011
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE
VBE(sat)
Min
–45
–25
–6
—
—
45
85
40
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
–500
–500
—
330
—
–0.5
–1
–1.2
Unit
V
V
V
nA
nA
—
—
—
V
V
V
Test conditions
IC = –10 A, IE = 0
IC = –100 A, RBE = ∞
IE = –10 A, IC = 0
VCB = –45 V, IE = 0
VEB = –6 V, IC = 0
VCE = –1 V, IC = –5 mA
VCE = –1 V, IC = –100 mA
VCE = –1 V, IC = –800 mA
IC = –800 mA, IB = –80 mA
VCE = –1 V, IC = –10 mA
IC = –800 mA, IB = –80 mA
Page 2 of 4
HIT562
Preliminary
Main Characteristics
Typical Output Characteristics
1.2
-2 mA
-200
100
0
150
-0.8
-1.2
-1.6
-2.0
Typical Transfer Characteristics
-600 µA
-500 µA
-1000
-400 µA
-60
-300 µA
-40
-200 µA
-100 µA
-20
VCE = 2 V
Pulse
-100
Ta = 75°C
-2.0
-4.0
-6.0
-8.0
25°C
-10
IB = 0
-1
-10.0
0
-0.2
-0.4
-0.6
-0.8
-1.0
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
Collector to Emitter Disturation Voltage
vs. Collector Current
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Voltage VCE (V)
1000
DC Current Transfer Ratio hFE
-0.4
Typical Output Characteristics
-700 µA
0
IB = 0 mA
0
Collector to Emitter Voltage VCE (V)
-80
0
-1 mA
Ambient Temperature Ta (°C)
Collector Current IC (mA)
Collector Current IC (mA)
-100
50
-5 mA
-4 mA
-3 mA
-400
0
0
8
0.
0.4
=
0.8
-10 mA
-9 mA
-8 mA
-7 mA
-600 -6 mA
-800
W
Collector Current IC (mA)
-1000
PC
Collector Power Dissipation Pc (W)
Maximum Collector Dissipation Curve
-0.15
Ta = 75°C
300
IC = 10 IB
Pulse
Ta = 75°C
25°C
-0.10
25°C
100
-0.05
30
VCE = 2 V
Pulse
10
-1
-3
-10
-30
-100 -300 -1000
Collector Current IC (mA)
R07DS0448EJ0400 Rev.4.00
Jun 14, 2011
0
-1
-10
-100
-1000
Collector Current IC (mA)
Page 3 of 4
HIT562
Preliminary
Package Dimensions
Package Name
TO-92 Mod
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Previous Code
TO-92 Mod / TO-92 ModV
MASS[Typ.]
0.35g
4.8 ± 0.4
Unit: mm
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55 Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5 Max
1.27
2.54
Ordering Information
Orderable Part Number
HIT562-EQ
HIT562-TZ-EQ
HIT562-HQ
HIT562-TZ-HQ
Quantity
2500 pcs.
2500 pcs.
2500 pcs.
2500 pcs.
Shipping Container
Bulk, Vinyl Bag
Hold Box, Radial Taping
Bulk, Vinyl Bag
Hold Box, Radial Taping
Remarks
PB free product
Halogen free & PB free product
Notes: 1. This product is designed for consumer use and not for automotive or industrial use.
2. For Hold Box, Radial Taping, leads is forming applied as following figure.
Unit: mm
18.0
9.0
19.0
16.0
28.0 max.
12.7
2.5 2.5
6.35
12.7
R07DS0448EJ0400 Rev.4.00
Jun 14, 2011
4.0
Page 4 of 4
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