Seme LAB MJ11030 Complementary darlington power transistor Datasheet

SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
NPN
PNP
MJ11028
MJ11030
MJ11032
MJ11029
MJ11031
MJ11033
COMPLEMENTARY
DARLINGTON
POWER TRANSISTOR
25.4
(1.0)
10.92
(0.430)
1.57
(0.062)
30 .15
(1.187 )
FEATURES
1
• HIGH DC CURRENT GAIN
HFE = 1000 Min @ IC = 25A
HFE = 400 Min 0@ IC = 50A
2
1 6 .89
(0.665)
• CURVES TO 100A (Pulsed)
• DIODE PROTECTION TO RATED IC
• MONOLITHIC CONSTRUCTION WITH
BUILT-IN BASE – EMITTER SHUNT RESISTOR
4.1
(0.161
+0.4
–0
+0.016
–0
4.0 ± 0.1
(0.157 ± 0.004)
)
Tolerance ±
11.65 ± 0.35
(0.459 ± 0.014)
9.0
(0.354)
0.127
unless otherwise stated
(0.005)
APPLICATIONS
TO–3
Pin 1 – Base
Pin 2 – Emitter
• JUNCTION TEMPERATURE TO +200°C
Case – Collector
For use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated)
MJ11028 MJ11030 MJ11032
MJ11029 MJ11031 MJ11033
60V
90V
120V
VCEO
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emitter – Base Voltage
5V
IC
Continuous Collector Current
50A
ICM
Peak Collector Current
100A
IB
Base Current
Ptot
Total Dissipation at Tcase = 25°C
Derate above 25°C
TSTG , TJ
Operating and Storage Junction Temperature Range
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
60V
90V
120V
2A
300W
1.71W/°C
–55 to +175°C
Prelim. 2/96
SEME
LAB
Parameter
NPN
PNP
MJ11028
MJ11030
MJ11032
MJ11029
MJ11031
MJ11033
Test Conditions
Min.
Typ. Max.
Unit
OFF CHARACTERISTICS
V(BR)CEO*
Collector – Emitter
IC = 100mA
Breakdown Voltage
IB = 0
VCE = 60V
RBE = 1kW
ICER
Collector – Emitter
Leakage Current
TC = 150°C
VCE = 90V
RBE = 1kW
TC = 150°C
VCE = 120V
IEBO
ICEO
RBE = 1kW
TC = 150°C
Emitter Cut–Off Current
VBE = 5V
IC = 0
Collector – Emitter
VCE = 50V
Leakage Current
IB = 0
MJ11028 , MJ11029
60
MJ11030 , MJ11031
90
MJ11032 , MJ11033
120
V
2
MJ11028 , MJ11029
10
2
MJ11030 , MJ11031
mA
10
2
MJ11032 , MJ11033
10
5
mA
2
mA
ON CHARACTERISTICS
hFE*
VCE(sat)*
VBE(sat)*
VCE = 5V
IC = 25A
1000
VCE = 5V
IC = 50A
400
Collector – Emitter
IC = 25A
IB = 250mA
2.5
Saturation Voltage
IC = 50A
IB = 500mA
3.5
Base – Emitter
IC = 25A
IB = 200mA
3.0
Saturation Voltage
IC = 50A
IB = 300mA
4.5
DC Current Gain
* Pulse Test: tp £ 300µs, d £ 2%.
—
V
V
Figure 1 – DC Safe Operating Area
Figure 2 – DC Current Gain
Semelab plc.
18000
Figure 3 – “ON” Voltage
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 2/96
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