PHILIPS BYC10-600 Rectifier diode ultrafast, low switching loss Datasheet

Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
FEATURES
BYC10-600
SYMBOL
• Extremely fast switching
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in
associated MOSFET
QUICK REFERENCE DATA
VR = 600 V
k
1
VF ≤ 1.8 V
a
2
IF(AV) = 10 A
trr = 19 ns (typ)
APPLICATIONS
• Active power factor correction
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched
mode power supplies.
The BYC10-600 is supplied in the
SOD59 (TO220AC) conventional
leaded package.
PINNING
PIN
SOD59 (TO220AC)
DESCRIPTION
1
cathode
2
anode
tab
tab
cathode
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VRWM
VR
IF(AV)
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
IFRM
IFSM
Tstg
Tj
CONDITIONS
Tmb ≤ 114 ˚C
δ = 0.5; with reapplied VRRM(max);
Tmb ≤ 78 ˚C1
Repetitive peak forward current δ = 0.5; with reapplied VRRM(max);
Tmb ≤ 78 ˚C1
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; Tj = 150˚C prior to surge
with reapplied VRWM(max)
Storage temperature
Operating junction temperature
MIN.
MAX.
UNIT
-
600
600
500
10
V
V
V
A
-
20
A
-
65
71
A
A
-40
-
150
150
˚C
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Rth j-a
September 1998
CONDITIONS
in free air.
1
MIN.
TYP.
MAX.
UNIT
-
-
2
K/W
-
60
-
K/W
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10-600
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
trr
Reverse recovery time
trr
Reverse recovery time
Irrm
Peak reverse recovery current
Vfr
Forward recovery voltage
IF = 10 A; Tj = 150˚C
IF = 20 A; Tj = 150˚C
IF = 10 A;
VR = 600 V
VR = 500 V; Tj = 100 ˚C
IF = 10 A to VR = 400 V;
dIF/dt = 500 A/µs
IF = 10 A to VR = 400 V;
dIF/dt = 500 A/µs; Tj = 125˚C
IF = 10 A to VR = 400 V;
dIF/dt = 500 A/µs; Tj = 125˚C
IF = 10 A; dIF/dt = 100 A/µs
ID
IL
Vin
MIN.
TYP.
MAX.
UNIT
-
1.4
1.7
2.0
9
1.1
19
1.8
2.3
2.8
200
3.0
-
V
V
V
µA
mA
ns
-
32
40
ns
-
9.5
12
A
-
8
11
V
Vin Vin = 400 V d.c.
Vo = 400 V d.c.
IR IF
150 uH
typ
OUTPUT DIODE
inductive load
IL
500 V MOSFET
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction, mode where the transistor turns on whilst
forward current is still flowing in the diode.
September 1998
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
30
BYC10-600
Forward dissipation, PF (W)
Tmb(max) C
0.2
Irrm
ID
dIF/dt
100
0.5
20
90
D = 1.0
Vo = 1.3 V
Rs = 0.05 Ohms
25
BYC10-600
ID = IL
110
losses due to
diode reverse recovery
120
time
0.1
15
10
I
tp
D=
130
VD
140
5
t
T
0
tp
T
0
150
15
5
10
Average forward current, IF(AV) (A)
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where IF(AV) =IF(RMS) x √D.
0.25
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Diode reverse recovery switching losses, Pdsw (W)
100
Reverse recovery time, trr (ns)
BYC10-600
f = 20 kHz
Tj = 125 C
0.2 VR = 400 V
10 A
20 A
0.15
10 A
IF = 5 A
20 A
0.1
Tj = 125 C
VR = 400 V
IF = 5 A
0.05
0
100
10
100
1000
Rate of change of current, dIF/dt (A/us)
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dIF/dt.
8
1000
Fig.7. Typical reverse recovery time trr, as a function
of rate of change of current dIF/dt.
Transistor losses due to diode reverse recovery, Ptsw (W)
7
Rate of change of current, dIF/dt (A/us)
100
Peak reverse recovery current, Irrm (A)
BYC10-600
20 A
6
5
4
10 A
f = 20 kHz
Tj = 125 C
VR = 400 V
10
20 A
3
IF = 5 A
IF = 5 A
2
1
Tj = 125 C
VR = 400 V
BYC10-600
0
100
Rate of change of current, dIF/dt (A/us)
1
100
1000
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dIF/dt.
September 1998
Rate of change of current, dIF/dt (A/us)
1000
Fig.8. Typical peak reverse recovery current, Irrm as a
function of rate of change of current dIF/dt.
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
I
dI
F
BYC10-600
15
rr
time
Q
I
Tj = 25 C
Tj = 150 C
dt
t
I
R
100%
10%
s
5
rrm
0
Peak forward recovery voltage, Vfr (V)
max
typ
10
Fig.9. Definition of reverse recovery parameters trr, Irrm
20
BYC10-600
Forward current, IF (A)
20
F
0
1
2
Forward voltage, VF (V)
3
4
Fig.12. Typical and maximum forward characteristic
IF = f(VF); Tj = 25˚C and 150˚C.
BYC10-600
100mA
BYC10-600
Reverse leakage current (A)
Tj = 25 C
IF = 10 A
10mA
15
Tj = 125 C
typ
100 C
1mA
10
75 C
100uA
50 C
5
25 C
10uA
0
0
50
100
150
Rate of change of current, dIF/dt (A/ s)
1uA
200
Fig.10. Typical forward recovery voltage, Vfr as a
function of rate of change of current dIF/dt.
I
0
100
200
300
400
Reverse voltage (V)
500
600
Fig.13. Typical reverse leakage current as a function
of reverse voltage. IR = f(VR); parameter Tj
10
F
Transient thermal impedance, Zth j-mb (K/W)
1
time
0.1
VF
PD
0.01
V
D=
tp
T
fr
VF
0.001
1us
time
Fig.11. Definition of forward recovery voltage Vfr
September 1998
tp
T
10us
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV79E
10s
Fig.14. Maximum thermal impedance Zth j-mb as a
function of pulse width.
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10-600
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1
(2x)
2
0,9 max (2x)
5,08
0,6
2,4
Fig.15. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC10-600
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
6
Rev 1.100
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