STMicroelectronics HCF4521BEY 24 stage frequency divider Datasheet

HCF4521B

24 STAGE FREQUENCY DIVIDER
■
■
■
■
■
■
VERY LOW QUIESCENT CURRENT
HIGH NOISE IMMUNITY
VOLTAGE SUPPLY RANGE 3V TO 18V
ALL STAGES ARE RESETTABLE
RESET DISABLES THE RC OSCILLATORFOR
LOW STANDBY POWER DRAIN
RC AND CRYSTAL OSCILLATOR OUTPUT
ARE CAPABLE OF DRIVING EXTERNAL
LOADS
DESCRIPTION
The HCF4521B is a monolithic integrated circuit,
available in 16-lead dual-in-line plastic package
and plastic micro packages.
The HCF4521B have a chain of 24 flip-flops with
an input circuit that allows three modes of
operation. The input circuit functions as a crystal
or an RC oscillator or as an input buffer for an
external oscillator. Each flip-flop performs a
divide-by-two function giving a total count of 224 =
16,777,216. The count advances on the negative
going edge of the clock. Access is available to the
final seven stages giving the device added
flexibility.
EY
M1
(Plastic Package)
(Micro Package)
ORDER CODES :
HCF4521BEY
HCF4521BM1
PIN CONNECTION
February 1999
1/12
HCF4521
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATING
Symbol
VDD *
Parameter
Supply Voltage
Value
Unit
-0.5 to +18
V
-0.5 to VDD + 0.5
V
Vi
Input Voltage
II
DC Input Current (any one input)
± 10
mA
Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top = Full Package Temperature Range
200
mW
100
mW
Ptot
Top
Operating Temperature
-40 to +85
o
Tstg
Storage Temperature
-65 to +150
o
C
C
Stresses above those listedunder ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional
operation ofthe device atthese or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum ratingconditions for external periods may affect device reliability.
* Allvoltage values are referred to VSS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
Supply Voltage
3 to 15
V
VI
Input Voltage
0 to VDD
V
Top
Operating Temperature
VDD
2/12
-40 to +85
o
C
HCF4521
FUNCTIONAL DIAGRAM
3/12
HCF4521
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions, voltages
References to VSS)
Symb ol
Parameter
T est Cond it ios
VO
|IO | V DD
-40
(µA) (V) Min.
(V)
0/5
5
0/10
10
0/15
15
0/5
<1
5
4.95
0/10
< 1 10 9.95
0/15
< 1 15 14.95
5/0
<1
5
10/0
< 1 10
15/0
< 1 15
0.5/4.5 < 1
5
3.5
1/9
< 1 10
7
1.5/13.5 < 1 15
11
4.5/0.5 < 1
5
9/1
< 1 10
13.5/1.5 < 1 15
0/5
2.5
5
-1.53
0/5
4.6
5
-0.52
0/10
9.5
10
-1.3
0/15
13.5
15
-3.5
0/5
0.4
5
0.52
0/10
0.5
10
1.3
0/15
1.5
15
3.6
VI
(V)
IL
VOH
VOL
VIH
VIL
IOH
IOL
IIH, IIL
CI
Quiescent Current
Output High
Voltage
Output Low
Voltage
Input High
Voltage
Input Low
Voltage
Output Drive
Current
Output Sink Current
Input Leakage
Current
Input Capacitance
0/18 Any Input
Any Input
18
Valu e
o
C
25 C
Max. Min. T yp.
20
0.04
40
0.04
80
0.04
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
-1.36 -3.2
-0.44
-1
-1.1
-2.6
-3.0
-6.8
0.44
1
1.1
2.6
3.0
6.8
o
±0.1
Un it
85 o C
Max. Min . Max.
20
150
40
300
80
600
4.95
9.95
14.95
0.05
0.05
0.05
0.05
0.05
0.05
3.5
7
11
1.5
1.5
3
3
4
4
-1.1
-0.36
-0.9
-2.4
0.36
0.9
2.4
±10-5
±0.1
5
7.5
TheNoise Margin for both ”1” and ”0” level is: 1V min.withV DD = 5 V, 2 V min.with VDD = 10 V, 2.5 V min. with VDD = 15 V
4/12
±1
µA
V
V
V
V
mA
mA
µA
pF
HCF4521
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25 oC, CL = 50 pF, RL = 200 KΩ,
typical temperaturecoefficent for all VDD values is 03 %/oC, all input rise and fall times= 20 ns)
Symb ol
tPLH
tPHL
Parameter
Output Rise Time
Output Fall Time
tPHL
tPLH
Propagation Delay Time Clock to Q18
tPHL
tPLH
Propagation Delay Time Clock to Q24
tPHL
Propagation Delay Time RESET to Qn
tWH(cl)
fcl
Clock Pulse Width
Clock Pulse Frequency
tTLH
tTHL
Clock Rise and Fall Time
tW(R)
Reset Pulse Width
T est Cond ition s
V DD
(V)
5
10
15
5
10
Min.
Value
Typ. Max.
100
50
40
100
50
200
100
80
200
100
15
5
10
15
5
10
15
40
4.5
1.7
1.3
6.0
2.2
1.7
80
9.0
3.5
2.7
12
4.5
3.5
5
10
1300
500
2600
1000
375
140
55
40
3.5
9
12
750
15
5
10
15
5
10
15
5
10
15
5
10
15
385
150
120
1400
600
450
700
300
225
Un it
ns
ns
µs
µs
ns
ns
2
5
6.5
MHz
15
15
15
µs
ns
5/12
HCF4521
Typical Output Low (sink) Current Characteristics
Minimum Output Low (sink) Current
Characteristics
Typical Output High (source) Current
Characteristics
Minimum Output High (source) Current
Characteristics
Typical Power Dissipation vs, Frequency
6/12
HCF4521
FUNCTIONAL TEST SEQUENCE
Inpu ts
Outpu ts
Co mmen ts
RESET
In2
Out2
V SS ’
V DD ’
Q18 thru
Q24
1
0
0
VDD
GND
0
Counter is in three 8-stage sections in parallel mode.
Counter is reset. In2 and Out2 are connected togheter
0
1
1
VDD
GND
0
First ”0” to ”1” transition on In2, Out2 node.
0
0
0
VDD
GND
0
0
1
1
VDD
GND
0
255 ”0” to ”1” transitions are clocked into this In2, Out2
node.
0
1
1
VDD
GND
1
The 255th ”0” to ”1” transition.
0
0
0
VDD
GND
1
0
0
0
GND
GND
1
0
1
0
GND
VDD
1
Counter converted back to 24-stages in series mode.
0
1
0
GND
VDD
1
Out2 converts back to an output
0
0
1
GND
VDD
0
Counter ripples from an all ”1” state to an all ”0” stage.
A test function (see fig.8) has been included forthe reduction oftest time required to exercise all 24 counter stages. This test function divides the counter
intothree 8-stage sections and 255 counts are loaded in each of the 8-stage sections in parallel. All flip-flopare now ata logic ”1”. The counter is now
returned to the normal 24-stages in series configuration. One more pulse is entered intoInput 2 (In2) which will cause the counter to ripple from an all ”1”
state to an all ”0” state.
RC Oscillator Circuit
Functional Test Circuit
1
2.3 RTC C
RS ≥ 2 RTC
f in Hz, R in Ohms, C inFarads
f≅
7/12
HCF4521
TYPICAL DATA FOR CRYSTAL OSCILLATOR CIRCUIT
Characteristic
500 kHz
CIRCUIT
50 kHz CIRCUIT
Un it
Crystal Characteristics
Resonant Frequency
Equivalent Reistance, RS
500
1
50
6.2
kHz
kΩ
External Resistor/Capacitor Values
RO
CT
CS
47
82
20
750
82
20
kΩ
pF
pF
6
2
2
2
ppm
ppm
-4
100
-2
120
ppm
ppm
-2
-160
-2
-560
ppm
ppm
Frequency Stability
Frequency Change as a Function of VDD (TA = 25 oC)
V DD Change from 5V to 10V
V DD Change from 10V to 15V
Frequency Change as a Function of Temperature (VDD = 10 V)
T A Change from -55 oC to 25 oC
HCF4521B only
Complete Oscillator *
T A Change from 25 oC to 125 oC
HCF4521B only
Complete Oscillator *
* Complete oscillator includes crystal, capacitors and resistors.
Crystal Oscillator Circuit
* Optional forlow power operation.
8/12
HCF4521
TEST CIRCUITS
Quiescent Device Current.
Noise Immunity.
Input Leakage Current.
9/12
HCF4521
Plastic DIP-16 (0.25) MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
0.77
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.030
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
17.78
0.700
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
0.130
1.27
0.050
P001C
10/12
HCF4521
SO-16 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.004
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45 (typ.)
D
9.8
10
0.385
0.393
E
5.8
6.2
0.228
0.244
e
1.27
e3
0.050
8.89
0.350
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.62
0.024
8 (max.)
P013H
11/12
HCF4521
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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12/12
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