AOSMD AON7702L N-channel enhancement mode field effect transistor Datasheet

AON7702
N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
General Description
Features
SRFETTM AON7702/L uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS,
load switching and general purpose applications.
VDS (V) = 30V
(VGS = 10V)
ID = 13.5A
RDS(ON) < 10mΩ (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 4.5V)
- RoHS Compliant.
- Halogen Free
DFN 3x3
Top View
D
Bottom View
S
S
S
G
Pin 1
D
D
G
D
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current B,G
Pulsed Drain Current
C
TA=70°C
A
35
14
Junction and Storage Temperature Range
2
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
3.1
PDSM
TA=70°C
Alpha & Omega Semiconductor, Ltd.
10
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
A
80
IDSM
TA=25°C
Power Dissipation
V
13.5
TA=25°C
B
±20
20
ID
IDM
TC=25°C
Power Dissipation
Units
V
20
TC=100°C
Continuous Drain
Current B
Maximum
30
RθJA
RθJC
Typ
30
60
3.1
°C
Max
40
75
3.7
Units
°C/W
°C/W
°C/W
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AON7702
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Min
Conditions
ID=250µA, VGS=0V
100
TJ=55°C
500
100
nA
3
V
8
10
12
15
VGS=4.5V, ID=11A
11
14
VDS=5V, ID=13.5A
21
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
80
VGS=10V, ID=13.5A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10v) Total Gate Charge
Qg (4.5v) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
A
0.38
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
µA
1.6
Gate-Body leakage current
Gate Threshold Voltage
Output Capacitance
Units
V
VDS=30V, VGS=0V
IGSS
Coss
Max
30
VGS(th)
IS
Typ
2390
VGS=0V, VDS=15V, f=1MHz
S
0.5
V
6
A
4250
pF
480
pF
180
VGS=0V, VDS=0V, f=1MHz
0.5
VGS=10V, VDS=15V, ID=13.5A
VGS=10V, VDS=15V, RL=1.1Ω,
RGEN=3Ω
mΩ
pF
1
1.5
Ω
37
48
nC
16
21
nC
9.3
nC
5.5
nC
9
ns
14
ns
32
ns
16
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=13.5A, dI/dt=100A/µs
29
Qrr
Body Diode Reverse Recovery Charge IF=13.5A, dI/dt=100A/µs
15
38
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
air environment with T A=25°C. The SOA
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still
150
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating.
G.The maximum current rating is limited by bond-wires.
35
Rev0: Sept 2007
14
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AON7702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
80
10V
4.5V
VDS=5V
35
4.0V
6.0V
30
60
ID(A)
ID (A)
25
3.5V
40
20
125°C
15
`
20
25°C
10
VGS=3V
-40°C
5
0
0
0
1
2
3
4
5
0
1
VDS (Volts)
Figure 1: On-Region Characteristics
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics
14
Normalized On-Resistance
1.8
12
RDS(ON) (mΩ)
2
VGS=4.5V
10
VGS=10V
8
1.6
VGS=10V
ID=13.5A
1.4
VGS=4.5V
ID=11A
1.2
1
0.8
6
0
5
10
15
20
0.6
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
10
30
ID=13.5A
150
25
25°C
15
IS (A)
RDS(ON) (mΩ)
1
35
14
20
125°C
125°C
0.1
25°C
10
-55 to 150
0.01
5
-40°C
-40°C
0
0.001
2
3
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
60
3
0.4
0.6
75
VSD (Volts)
3.5
0.8
1.0
Figure 6: Body-Diode Characteristics
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AON7702
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
VDS=15V
ID=13.5A
2500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
2000
1500
1000
Coss
500
0
Crss
0
0
10
20
30
40
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
1000
100
30
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
1ms
RDS(ON)
limited
0.1
TJ(Max)=150°C
TA=60°C
DC
10ms
100ms
1s
10s
Power (W)
ID (Amps)
10
0.01
0.1
1
10
10
ZθJA Normalized Transient
Thermal Resistance
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
10
1
0.0001 0.001
100
VDS (Volts)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
100
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
35
14
0.1
-55 to 150
PD
0.01
Ton
0.001
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
60
3
10
T
75
3.5
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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