Vishay DG2714 Low-voltage single spdt analog switch Datasheet

DG2714
New Product
Vishay Siliconix
Low-Voltage Single SPDT Analog Switch
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Low Voltage Operation (1.6 V to 3.6 V)
Low On-Resistance - rDS(on): 0.85 W Typ.
Fast Switching - tON : 28 ns, tOFF: 12 ns
Low Leakage
TTL/CMOS Compatible
6-Pin SC-70 Package
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits
DESCRIPTION
The DG2714 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog signals. Combining low power, high speed (tON: 28 ns,
tOFF: 12 ns), low on-resistance (rDS(on): 0.85 W) and small
physical size (SC70), the DG2714 is ideal for portable and
battery powered applications requiring high performance and
efficient use of board space.
The DG2714 is built on Vishay Siliconix’s low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before -make is guaranteed for DG2714.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic
SC-70
IN
1
6
NO (Source1)
V+
2
5
COM
GND
3
4
NC (Source2)
Top View
Device Marking: E8xx
Document Number: 72308
S-31310—Rev. A, 30-Jun-03
NC
NO
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85°C
SC70-6
DG2714DL
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1
DG2714
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +4 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC and COM Pins) . . . . . . . . . . . . . . . . "200 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Power Dissipation (Packages)b
6-Pin SO70c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/_C above 70_C
SPECIFICATIONS (V+ = 1.8 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 1.8 V, "10%, VIN = 0.4 or 1.1 Ve
Limits
-40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON
rON
Flatness
rON Flatnessd
rON Matchd
Switch Off Leakage
VNO, VNC,
VCOM
Currentf
Room
Fulld
1.8
Room
3.0
4.5
2
DrON
Room
Room
Fulld
-1
-10
1
10
Room
Fulld
-1
-10
1
10
Room
Fulld
-1
-10
1
10
1.1
ICOM(on)
W
V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current f
V+ = 1.8 V, VCOM = 0.2 V/0.9 V
INO, INC = 10 mA
V+ = 2.2 V
VNO, VNC = 0.2 V/2.0 V, VCOM = 2.0 V/0.2 V
V+ = 2.2 V, VNO, VNC = VCOM = 0.2 V/2.0 V
0.06
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Input Currentf
Full
Cin
IINL or IINH
0.4
VIN = 0 or V+
Full
3.5
-1
V
pF
1
mA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Break-Before-Make Timed
td
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
Channel-On Capacitanced
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2
VNO or VNC = 1
1.5
5V
V, RL = 300 W
W, CL = 35 pF
F
Figures 1 and 2
CNO(off),
CNC(off)
CON
Room
Fulld
55
75
89
Room
Fulld
19
39
40
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 50 W,
W CL = 5 pF,
pF f = 1 MHz
ns
3
Room
13
Room
-64
Room
-64
Room
32
Room
78
VIN = 0 or V+, f = 1 MHz
pC
dB
pF
Document Number: 72308
S-31310—Rev. A, 30-Jun-03
DG2714
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 3 V, "10%, VIN = 0.5 or 1.5 Ve
Limits
-40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatness
rON MatchFlat
VNO, VNC,
VCOM
rON
rON
Flatness
Switch Off Leakage Current
ICOM(off)
ICOM(on)
Room
Full
0.85
1.2
1.3
Room
0.2
Room
0.06
W
V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 100 mA
DrON
INO(off),
INC(off)
Channel-On Leakage Current
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO
INC = 100 mA
V+ = 3.3 V
VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V
Room
Full
-1
-10
1
10
Room
Full
-1
-10
1
10
Room
Full
-1
-10
1
10
1.5
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Input Currentf
Full
Cin
IINL or IINH
0.5
VIN = 0 or V+
Full
3.3
-1
V
pF
1
mA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
Charge
Injectiond
td
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
Channel-On Capacitanced
VNO or VNC = 2
2.0
0V
V, RL = 300 W
W, CL = 35 pF
F
Figure 1 and 2
CNO(off),
CNC(off)
Room
Full
28
51
55
Room
Full
12
33
34
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 50 W,
W CL = 5 pF,
pF f = 1 MHz
1
Room
9
Room
-64
Room
-64
Room
30
Room
77
pC
dB
VIN = 0 or V+, f = 1 MHz
CON
ns
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.5
V+ = 3.6 V, VIN = 0 or V+
0.01
3.6
V
1.0
mA
Notes:
a.
b.
c.
d.
e.
f.
Room = 25°C, Full = as determined by the operating suffix.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Typical values are for design aid only, not guaranteed nor subject to production testing.
Guarantee by design, nor subjected to production test.
VIN = input voltage to perform proper function.
Guaranteed by 3-V leakage testing, not production tested.
Document Number: 72308
S-31310—Rev. A, 30-Jun-03
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DG2714
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Single Supply Voltage
rON vs. Analog Voltage and Temperature
2.5
2.5
IS = 100 mA
2.0
V+ = 1.8 V
1.5
V+ = 2 V
V+ = 2.5 V
V+ = 3 V
V+ = 3 .3 V
1.0
r ON - On-Resistance ( W )
r ON - On-Resistance ( W )
T = 25_C
IS = 10 mA
V+ = 3.6 V
0.5
V+ = 1.8 V
85_C
2.0
25_C
-40_C
1.5
V+ = 3.0 V
1.0
85_C
25_C
-40_C
0.5
-40_C
85_C
25_C
V+ = 2.9 V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
3.5
0.5
1.0
VCOM - Analog Voltage (V)
2.0
2.5
3.0
VCOM - Analog Voltage (V)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
100 m
10000
V+ = 3 V
VIN = 0 V
V+ = 3 V
10 m
1m
1000
I+ - Supply Current (A)
I+ - Supply Current (nA)
1.5
100
10
100 m
10 m
1m
100 n
10 n
1n
1
-60
-40
-20
0
20
40
60
80
10
100
100
1K
10 K
100 K
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
250
V+ = 3.3 V
V+ = 3.3 V
T = 25_C
200
Leakage Current (pA)
150
Leakage Current (pA)
10 M
300
1000
100
10
1M
Input Switching Frequency (Hz)
Temperature (_C)
ICOM(on)
ICOM(off)
ICOM(off)
100
50
ICOM(on)
0
-50
INO(off)/INC(off)
-100
-150
INO(off)/INC(off)
-200
-250
1
-60
-40
-20
0
20
40
Temperature (_C)
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4
60
80
100
-300
0.00
0.55
1.10
1.65
2.20
2.75
3.30
VCOM, VNO, VNC - Analog Voltage
Document Number: 72308
S-31310—Rev. A, 30-Jun-03
DG2714
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
10
tON V+ = 2 V
45
0
35
tON V+ = 3 V
30
tON V+ = 3.6 V
25
20
tOFF V+ = 2 V
tOFF V+ = 3 V
tOFF V+ = 3.6 V
15
10
XTALK
-20
OIRR
-30
-40
-50
V+ = 3 V
RL = 50 W
-60
-70
5
0
-60
LOSS
-10
Loss, OIRR, XTALK (dB)
40
-80
-40
-20
0
20
40
60
80
-90
100 K
100
1M
10 M
100 M
1G
Frequency (Hz)
Temperature (_C)
Charge Injection vs. Analog Voltage
30
20
Q - Charge Injection (pC)
t ON,
t OFF - Switching Time (ns)
50
V+ = 1.8 V
10
0
V+ = 3 V
-10
-20
-30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCOM - Analog Voltage (v)
Document Number: 72308
S-31310—Rev. A, 30-Jun-03
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DG2714
New Product
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
VINL
V+
Switch
Input
Switch Output
COM
NO or NC
tr t 5 ns
tf t 5 ns
50%
VOUT
0.9 x VOUT
Switch
Output
IN
Logic
Input
RL
300 W
GND
CL
35 pF
0V
tOFF
tON
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
V OUT + V COM
ǒ
RL
R L ) R ON
Ǔ
FIGURE 1. Switching Time
V+
Logic
Input
V+
tr <5 ns
tf <5 ns
VINL
COM
NO
VNO
VINH
VO
NC
VNC
RL
300 W
IN
CL
35 pF
GND
VNC = VNO
VO
Switch
Output
90%
0V
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen
DVOUT
V+
COM
NC or NO
VOUT
VOUT
+
Vgen
IN
CL = 1 nF
IN
On
On
Off
GND
Q = DVOUT x CL
VIN = 0 - V+
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 3. Charge Injection
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Document Number: 72308
S-31310—Rev. A, 30-Jun-03
DG2714
New Product
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
NC or NO
0V, 2.4 V
IN
COM
RL
V COM
Off Isolation + 20 log V
NOńNC
GND
Analyzer
FIGURE 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
Document Number: 72308
S-31310—Rev. A, 30-Jun-03
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