ON MBRS140LT3 Surface mount schottky power rectifier Datasheet

MBRS140LT3
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
•
•
•
•
•
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE − 40 VOLTS
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over−Voltage Protection
Low Forward Voltage Drop
Pb−Free Package is Available
Mechanical Characteristics:
•
•
•
•
•
•
SMB
CASE 403A
PLASTIC
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
MARKING DIAGRAM
AYWW
B14LG
G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
IO
1.0
A
Peak Repetitive Forward Current (At Rated
VR, Square Wave, 100 kHz, TC = 110°C)
IFRM
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
40
A
Tstg, TC
−55 to +150
°C
TJ
−55 to +125
°C
dv/dt
10,000
V/ms
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 110°C)
Storage / Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change
(Rated VR, TJ = 25°C)
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2007
October, 2007 − Rev. 3
B14L
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
1
Device
MBRS140LT3
MBRS140LT3G
Package
Shipping †
SMB
2500/Tape & Reel
SMB
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBRS140LT3/D
MBRS140LT3
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Lead (Note 1)
RqJL
24
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
80
°C/W
Characteristic
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
TJ = 25°C
TJ = 125°C
Unit
vF
0.5
0.6
0.425
0.58
V
TJ = 25°C
TJ = 100°C
0.4
0.02
10
5.0
Maximum Instantaneous Forward Voltage (Note 3)
see Figure 2
(iF = 1.0 A)
(iF = 2.0 A)
Maximum Instantaneous Reverse Current (Note 3)
see Figure 4
(VR = 40 V)
(VR = 20 V)
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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2
IR
mA
MBRS140LT3
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
10
1.0
TJ = 125°C
25°C
100°C
−40 °C
0.1
0.1
0.3
0.5
0.7
0.9
100°C
25°C
0.1
0.3
0.1
0.5
0.9
0.7
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100E−3
IR , MAXIMUM REVERSE CURRENT (AMPS)
IR , REVERSE CURRENT (AMPS)
TJ = 125°C
1.0
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10E−3
TJ = 125°C
100°C
1.0E−3
TJ = 125°C
10E−3
100°C
1.0E−3
25°C
100E−6
100E−6
10E−6
25°C
10
0
20
30
40
1.0E−6
0
10
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
1.6
dc
FREQ = 20 kHz
1.4
1.2
SQUARE WAVE
1.0
Ipk/Io = p
0.8
Ipk/Io = 5.0
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
25
10E−6
PFO , AVERAGE POWER DISSIPATION (WATTS)
IO , AVERAGE FORWARD CURRENT (AMPS)
10
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100E−3
1.0E−6
100
45
65
85
105
125
0.9
0.8
SQUARE WAVE
0.7
Ipk/Io = p
0.6
Ipk/Io = 5.0
0.5
Ipk/Io = 10
0.4
0.3
Ipk/Io = 20
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
dc
1.6
MBRS140LT3
TJ , DERATED OPERATING TEMPERATURE (° C)
1000
C, CAPACITANCE (pF)
TJ = 25°C
100
10
R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0
1.0E+00
1.0E−01
1.0E−02
5.0
10
15
20
25
30
35
125
24°C/W
115
44°C/W
63°C/W
80°C/W
105
40
Rtja = 94°C/W
95
85
75
65
0
5.0
10
15
20
25
30
35
40
VR, REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
50%
20%
10%
5.0%
2.0%
1.0%
1.0E−03
Rtjl(t) = Rtjl*r(t)
1.0E−04
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
10
100
1000
R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
t, TIME (s)
1.0E+00
1.0E−01
1.0E−02
Figure 9. Thermal Response, Junction−to−Lead
50%
20%
10%
5.0%
2.0%
1.0%
1.0E−03
Rtjl(t) = Rtjl*r(t)
1.0E−04
0.00001
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 10. Thermal Response, Junction−to−Ambient
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4
MBRS140LT3
PACKAGE DIMENSIONS
SMB
PLASTIC PACKAGE
CASE 403A−03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
HE
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.13
2.45
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.084
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.096
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MBRS140LT3/D
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