MOTOROLA MC74HCT541 Octal 3-state non-inverting buffer/line driver/line receiver with lsttl-compatible input Datasheet

SEMICONDUCTOR TECHNICAL DATA
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1
The MC74HCT541A is identical in pinout to the LS541. This device may
be used as a level converter for interfacing TTL or NMOS outputs to high
speed CMOS inputs.
The HCT541A is an octal non–inverting buffer/line driver/line receiver
designed to be used with 3–state memory address drivers, clock drivers, and
other bus–oriented systems. This device features inputs and outputs on
opposite sides of the package and two ANDed active–low output enables.
1
ORDERING INFORMATION
MC74HCTXXXAN
MC74HCTXXXADW
A2
A3
Data
Inputs
A4
A5
A6
A7
A8
Output
Enables
OE1
OE2
18
3
17
4
16
5
15
6
14
7
13
8
12
9
11
Inputs
Output Y
Y1
OE2
A
L
L
H
X
L
L
X
H
L
H
X
X
L
H
Z
Z
Y2
Y3
Y4
Non–Inverting
Outputs
Y5
Y6
Y7
Pinout: 20–Lead Packages (Top View)
Y8
PIN 20 = VCC
PIN 10 = GND
VCC
OE2
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
OE1
A1
A2
A3
A4
A5
A6
A7
A8
GND
10/95
 Motorola, Inc. 1995
OE1
Z = High Impedance
X = Don’t Care
1
19
Plastic
SOIC
FUNCTION TABLE
LOGIC DIAGRAM
2
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
20
Output Drive Capability: 15 LSTTL Loads
TTL/NMOS–Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 4.5 to 5.5V
Low Input Current: 1µA
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 134 FETs or 33.5 Equivalent Gates
A1
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
20
High–Performance Silicon–Gate CMOS
•
•
•
•
•
•
•
3–1
REV 1
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MC74HCT541A
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air
750
500
mW
Tstg
Storage Temperature Range
– 65 to + 150
_C
Iin
TL
Plastic DIP†
SOIC Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP or SOIC Package
260
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
Min
Max
Unit
4.5
5.5
V
0
VCC
V
– 55
+ 125
_C
0
500
ns
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature Range, All Package Types
tr, tf
Input Rise/Fall Time (Figure 1)
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
Guaranteed Limit
VCC
V
–55 to 25°C
≤85°C
≤125°C
Unit
VIH
Minimum High–Level Input Voltage
Vout = 0.1V or VCC – 0.1V
|Iout| ≤ 20µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL
Maximum Low–Level Input Voltage
Vout = 0.1V or VCC – 0.1V
|Iout| ≤ 20µA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout| ≤ 20µA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
4.5
3.98
3.84
3.70
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
4.5
0.26
0.33
0.40
VOH
Vin = VIH or VIL
VOL
Maximum Low–Level Output
Voltage
|Iout| ≤ 6.0mA
Vin = VIH or VIL
|Iout| ≤ 20µA
Vin = VIH or VIL
|Iout| ≤ 6.0mA
V
Iin
Maximum Input Leakage Current
Vin = VCC or GND
5.5
±0.1
±1.0
±1.0
µA
IOZ
Maximum Three–State Leakage
Current
Output in High Impedance State
Vin = VIL or VIH
Vout = VCC or GND
5.5
±0.5
±5.0
±10.0
µA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0µA
5.5
4
40
160
µA
Additional Quiescent Supply Current
Vin = 2.4V, Any One Input
Vin = VCC or GND, Other Inputs
Iout = 0µA
∆ICC
5.5
≥ –55°C
25 to 125°C
2.9
2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + Σ∆ICC.
MOTOROLA
3–2
High–Speed CMOS Logic Data
DL129 — Rev 6
MC74HCT541A
AC CHARACTERISTICS (VCC = 5.0V, CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
–55 to 25°C
≤85°C
≤125°C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
23
28
32
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
30
34
38
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
30
34
38
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
12
15
18
ns
Cin
Maximum Input Capacitance
10
10
10
pF
Cout
Maximum Three–State Output Capacitance (Output in High Impedance
State)
15
15
15
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Buffer)*
pF
55
* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
SWITCHING WAVEFORMS
3.0V
tf
tr
OE1 or OE2
3.0V
90%
INPUT A
1.3V
1.3V
GND
1.3V
tPZL tPLZ
10%
HIGH
IMPEDANCE
GND
tPLH
tPHL
OUTPUT Y
1.3V
10%
90%
1.3V
OUTPUT Y
VOL
tPZH tPHZ
10%
90%
OUTPUT Y
tTHL
tTLH
VOH
1.3V
HIGH
IMPEDANCE
Figure 1.
Figure 2.
TEST CIRCUITS
TEST
POINT
TEST
POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
CL*
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ and tPZH.
*Includes all probe and jig capacitance
Figure 3.
High–Speed CMOS Logic Data
DL129 — Rev 6
1kΩ
Figure 4.
3–3
MOTOROLA
MC74HCT541A
PIN DESCRIPTIONS
INPUTS
puts are enabled and the device functions as a non–inverting
buffer. When a high voltage is applied to either input, the outputs assume the high impedance state.
A1, A2, A3, A4, A5, A6, A7, A8 (PINS 2, 3, 4, 5, 6, 7, 8,
9) — Data input pins. Data on these pins appear in non–inverted form on the corresponding Y outputs, when the outputs are enabled.
OUTPUTS
Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8 (PINS 18, 17, 16, 15, 14,
13, 12, 11) — Device outputs. Depending upon the state of
the output enable pins, these outputs are either non–inverting outputs or high–impedance outputs.
CONTROLS
OE1, OE2 (PINS 1, 19) — Output enables (active–low).
When a low voltage is applied to both of these pins, the out-
LOGIC DETAIL
To 7 Other
Buffers
VCC
One of Eight
Buffers
INPUT A
OUTPUT Y
OE1
OE2
MOTOROLA
3–4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC74HCT541A
OUTLINE DIMENSIONS
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
–A–
20
11
1
10
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
B
L
C
–T–
DIM
A
B
C
D
E
F
G
J
K
L
M
N
K
SEATING
PLANE
M
N
E
G
F
J
D
0.25 (0.010)
M
T A
11
–B–
10X
P
0.010 (0.25)
1
M
B
M
10
20X
D
0.010 (0.25)
M
T A
B
S
J
S
F
R X 45 _
C
–T–
18X
G
SEATING
PLANE
K
M
T B
M
M
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
–A–
20
20 PL
0.25 (0.010)
20 PL
INCHES
MIN
MAX
1.010
1.070
0.240
0.260
0.150
0.180
0.015
0.022
0.050 BSC
0.050
0.070
0.100 BSC
0.008
0.015
0.110
0.140
0.300 BSC
0_
15 _
0.020
0.040
MILLIMETERS
MIN
MAX
25.66
27.17
6.10
6.60
3.81
4.57
0.39
0.55
1.27 BSC
1.27
1.77
2.54 BSC
0.21
0.38
2.80
3.55
7.62 BSC
0_
15_
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150
(0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.13
(0.005) TOTAL IN EXCESS OF D DIMENSION
AT MAXIMUM MATERIAL CONDITION.
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
12.65
12.95
7.40
7.60
2.35
2.65
0.35
0.49
0.50
0.90
1.27 BSC
0.25
0.32
0.10
0.25
0_
7_
10.05
10.55
0.25
0.75
INCHES
MIN
MAX
0.499
0.510
0.292
0.299
0.093
0.104
0.014
0.019
0.020
0.035
0.050 BSC
0.010
0.012
0.004
0.009
0_
7_
0.395
0.415
0.010
0.029
M
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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High–Speed CMOS Logic Data
DL129 — Rev 6
◊
CODELINE
3–5
*MC74HCT541A/D*
MC74HCT541A/D
MOTOROLA
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