Microsemi JANTXV2N5796U Pnp dual silicon transistor Datasheet

TECHNICAL DATA
PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496
Devices
Qualified Level
JAN
JANTX
JANTXV
2N5796
2N5796U
2N5795
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
Value
Units
VCEO
VCBO
VEBO
IC
60
60
5.0
600
Vdc
Vdc
Vdc
mAdc
(1)
One
@ TA = +250C
Total Power Dissipation
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/0C for TA ≥ +250C
2) Derate linearly 3.43 mW/0C for TA ≥ +250C
PT
TJ, Tstg
Section
0.5
Both
Sections
0.6
-65 to +175
W
0
C
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/496 for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
TO-78*
(2)
Symbol
Min.
V(BR)CEO
60
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 50 Vdc
VCBO = 60 Vdc
Emitter-Base Cutoff Current
VEB = 3.0 Vdc
VEB = 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
ICBO
10
10
ηAdc
µAdc
IEBO
100
10
ηAdc
µAdc
42203
Page 1 of 2
2N5795, 2N5796 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
hFE
40
40
40
40
20
20
hFE
75
100
100
100
50
50
Max.
Unit
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 100 µAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 100 µAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
2N5795
2N5796
2N5796U
150
300
VCE(sat)
0.4
1.6
Vdc
VBE(sat)
1.3
2.6
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
2.0
10
Cobo
8.0
pF
Cibo
25
pF
t
on
50
ηs
t
off
140
ηs
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 2 of 2
Similar pages