Vishay BAS40-00-V Small signal schottky diodes, single & dual Datasheet

BAS40-00-V to BAS40-06-V
Vishay Semiconductors
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on
voltage and fast switching
e3
• These devices are protected by a PN
junction guard ring against excessive voltage, such as electrostatic discharges
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
BAS40-00-V
BAS40-04-V
3
3
Top View
1
2
1
2
BAS40-05-V
BAS40-06-V
3
3
Top View
1
1
2
2
18435
Mechanical Data
Case: SOT23, Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Ordering code
Type Marking
Remarks
BAS40-00-V
BAS40-00-V-GS18 or BAS40-00-V-GS08
43
Tape and Reel
BAS40-04-V
BAS40-04-V-GS18 or BAS40-04-V-GS08
44
Tape and Reel
BAS40-05-V
BAS40-05-V-GS18 or BAS40-05-V-GS08
45
Tape and Reel
BAS40-06-V
BAS40-06-V-GS18 or BAS40-06-V-GS08
46
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Forward continuous current
Surge forward current
Power dissipation
1)
Symbol
Value
Unit
VRRM = VRWM = VR
40
V
IF
tp < 1 s
1)
IFSM
Ptot
200
1)
mA
600
1)
mA
200
1)
mW
Device on fiberglass substrate, see layout on next page.
Document Number 85701
Rev. 1.7, 27-Sep-06
www.vishay.com
1
BAS40-00-V to BAS40-06-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Symbol
Value
Unit
RthJA
5001)
K/W
Tj
125
°C
Tstg
- 65 to + 125
°C
Junction temperature
Storage temperature range
1) Device
on fiberglass substrate, see layout on next page.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
V(BR)
40
Typ.
Max
Unit
20
100
nA
VF
380
mV
Pulse test tp < 300 µs,
IF = 40 mA
VF
1000
mV
Diode capacitance
VR = 0 V, f = 1 MHz
CD
5
pF
Reverse recovery time
IF = IR = 10 mA, iR = 1 mA,
RL = 100 Ω
trr
5
ns
Reverse breakdown voltage
IR = 10 μA (pulsed)
Leakage current
Pulse test VR = 30 V, tp < 300 µs
IR
Forward voltage
Pulse test tp < 300 µs,
IF = 1.0 mA
V
4.0
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
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2
17451
Document Number 85701
Rev. 1.7, 27-Sep-06
BAS40-00-V to BAS40-06-V
Vishay Semiconductors
Package Dimensions in mm (Inches): SOT23
17418
Document Number 85701
Rev. 1.7, 27-Sep-06
www.vishay.com
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BAS40-00-V to BAS40-06-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85701
Rev. 1.7, 27-Sep-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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Document Number: 91000
Revision: 18-Jul-08
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