Fairchild BUT12A High voltage power switching application Datasheet

BUT12/12A
BUT12/12A
High Voltage Power Switching Applications
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
Parameter
Value
Units
: BUT12
: BUT12A
850
1000
V
V
Collector-Emitter Voltage
: BUT12
: BUT12A
400
450
V
V
Collector-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current
PC
Collector Dissipation (TC=25°C)
TJ
TSTG
8
A
20
A
4
A
100
W
Junction Temperature
150
°C
Storage Temperature
- 65 ~ 175
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector-Emitter Sustaining Voltage
Test Condition
IC = 100mA, L = 25mH
Min.
400
Typ.
Max.
Units
V
ICES
Collector Cut-off Current
VCE = VCES, VBE = 0
1
mA
IEBO
Emitter Cut-off Current
VBE = 9V, IC = 0
10
mA
V
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 6A, IB = 1.2A
1.5
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 6A, IB = 1.2A
1.5
V
tON
Turn On Time
1
µs
tSTG
Storage Time
4
µs
tF
Fall Time
VCC = 250V, IC = 6A
IB1 = - IB2 = 1.2A
RL = 41.6Ω
0.8
µs
* Pulsed Test: PW = 300µs, duty cycle = 1.5%
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
BUT12/12A
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
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SyncFET™
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As used herein:
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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Obsolete
Not In Production
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The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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