Infineon BSP318S Sipmos small-signal-transistor Datasheet

Rev 2.2
BSP318S
SIPMOS  Small-Signal-Transistor
Features
Product Summary
• N-Channel
Drain source voltage
•
Drain-Source on-state resistance RDS(on)
Enhancement mode
• Avalanche rated
VDS
60
V
0.09
Ω
2.6
A
ID
Continuous drain current
• Logic Level
• dv/dt rated
4
• Pb-free lead plating; RoHS compliant
Pin 1
• Qualified according to AEC Q101
Pin 2, 4
G
PIN 3
D
Type
Package
Tape and Reel
BSP318S
PG-SOT223
L6327: 1000 pcs/r BSP318S
Marking
Maximum Ratings,at T j = 25 °C, unless otherwise specified
Symbol
Parameter
3
2
S
1
VPS05163
Packaging
Non dry
Value
Continuous drain current
ID
2.6
Pulsed drain current
ID puls
10.4
Unit
A
T A = 25 °C
EAS
60
mJ
Avalanche current,periodic limited by T jmax
IAR
2.6
A
Avalanche energy, periodic limited by Tjmax
EAR
0.18
mJ
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
1.8
W
-55... +150
°C
Avalanche energy, single pulse
I D = 2.6 A, V DD = 25 V, R GS = 25 Ω
kV/µs
I S = 2.6 A, V DS = 20 V, di/dt = 200 A/µs,
T jmax = 150 °C
T A = 25 °C
Tj , Tstg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
55/150/56
Page 1
2008-03-21
Rev 2.2
BSP318S
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
17
-
@ min. footprint
-
100
-
@ 6 cm 2 cooling area 1)
-
-
70
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
(Pin 4)
RthJA
SMD version, device on PCB:
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
60
-
-
Gate threshold voltage, VGS = VDS
I D = 20 µA
VGS(th)
1.2
1.6
2
Zero gate voltage drain current
IDSS
Static Characteristics
Drain- source breakdown voltage
V
VGS = 0 V, I D = 0.25 mA
µA
VDS = 60 V, V GS = 0 V, Tj = 25 °C
-
0.1
1
VDS = 60 V, V GS = 0 V, Tj = 150 °C
-
-
100
IGSS
-
10
100
nA
RDS(on)
-
0.12
0.15
Ω
RDS(on)
-
0.07
0.09
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 4.5 V, I D = 2.6 A
Drain-Source on-state resistance
VGS = 10 V, I D = 2.6 A
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2008-03-21
Rev 2.2
BSP318S
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
gfs
2.4
5.5
-
S
Ciss
-
300
380
pF
Coss
-
90
120
Crss
-
50
65
td(on)
-
12
20
tr
-
15
25
td(off)
-
20
30
tf
-
15
25
Dynamic Characteristics
Transconductance
VDS≥2*I D*RDS(on)max , ID = 2.6 A
Input capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Turn-on delay time
ns
VDD = 30 V, VGS = 4.5 V, I D = 2.6 A,
RG = 16 Ω
Rise time
VDD = 30 V, VGS = 4.5 V, I D = 2.6 A,
RG = 16 Ω
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, I D = 2.6 A,
RG = 16 Ω
Fall time
VDD = 30 V, VGS = 4.5 V, I D = 2.6 A,
RG = 16 Ω
Page 3
2008-03-21
Rev 2.2
BSP318S
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
QG(th)
-
0.4
0.6
Gate charge at V GS = 5 V
VDD = 40 V, ID = 2.6 A, VGS = 0 to 5 V
Qg(5)
-
7
10
Gate charge total
Qg
-
14
20
V(plateau)
-
3.6
-
Dynamic Characteristics
Gate charge at threshold
nC
VDD = 40 V, ID = 0.1 A, V = 1 V
VDD = 40 V, ID = 2.6 A, VGS = 0 to 10 V
Gate plateau voltage
V
VDD = 40 V , I D = 2.6 A
Parameter
Symbol
Values
Unit
min.
typ.
max.
IS
-
-
2.6
ISM
-
-
10.4
VSD
-
0.95
1.2
V
trr
-
50
75
ns
Qrr
-
0.1
0.15
µC
Reverse Diode
Inverse diode continuous forward current
A
T A = 25 °C
Inverse diode direct current,pulsed
T A = 25 °C
Inverse diode forward voltage
VGS = 0 V, I F = 5.2 A
Reverse recovery time
VR = 30 V, IF=I S , di F/dt = 100 A/µs
Reverse recovery charge
VR = 30 V, IF=l S , diF/dt = 100 A/µs
Page 4
2008-03-21
Rev 2.2
BSP318S
Power Dissipation
Drain current
Ptot = f (TA)
ID = f (TA )
BSP318S
BSP318S
1.9
2.8
A
W
2.4
1.6
2.2
2.0
1.2
ID
Ptot
1.4
1.8
1.6
1.0
1.4
1.2
0.8
1.0
0.6
0.8
0.6
0.4
0.4
0.2
0.2
0.0
0
20
40
60
80
100
120
°C
0.0
0
160
20
40
60
80
100
120
°C
TA
TA
Safe operating area
Transient thermal impedance
I D = f ( VDS )
ZthJA = f(tp )
parameter : D = 0 , T A = 25 °C
parameter : D = tp /T
10
2
BSP318S
10 2
A
BSP318S
K/W
tp = 140.0µs
/I D
=
R
(
DS
on
V
10 1
DS
Z thJA
10 1
ID
160
)
1 ms
10 0
10 0
D = 0.50
10 ms
0.20
0.10
10 -1
0.05
10 -1
0.02
single pulse
0.01
DC
10 -2 -1
10
10
0
10
1
V
10
2
VDS
10 -2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s 10 4
tp
Page 5
2008-03-21
Rev 2.2
BSP318S
Typ. output characteristic
Typ. transfer characteristics ID = f ( VGS )
I D = f (VDS); T j=25°C
parameter: tp = 80 µs
VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
BSP318S
6.5
15
Ptot = 1.80W
A
A
VGS [V]
a
2.0
5.0
ID
4.5
c
4.0
3.5
3.0
2.5
2.0
b
2.5
12
c
3.0
11
d
3.5
e
4.0
f
4.5
g
5.0
h
5.5
i
6.0
j
7.0
6
k
8.0
5
l
10.0
10
ID
g
ihjfe
lk d
5.5
9
8
7
4
b
1.5
3
1.0
2
0.5
1
a
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
0
0
5.0
1
2
3
4
5
6
7
8
VDS
V
10
VGS
Drain-source on-resistance
Gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (Tj)
parameter : I D = 2.6 A, V GS = 4.5 V
parameter: VGS = VDS , ID = 20 µA
BSP318S
0.36
3.0
Ω
V
2.4
V GS(th)
RDS(on)
0.28
0.24
0.20
2.2
2.0
1.8
1.6
98%
1.4
0.16
typ
1.2
0.12
1.0
max
0.8
0.08
0.6
typ
0.4
0.04
0.2
0.00
-60
-20
20
60
100
°C
180
Tj
0.0
-60
min
-20
20
60
100
140 °C
200
Tj
Page 6
2008-03-21
Rev 2.2
BSP318S
Typ. capacitances
Forward characteristics of reverse diode
C = f(V DS)
IF = f (VSD )
parameter: VGS=0 V, f=1 MHz
parameter: Tj , tp = 80 µs
10 3
10 2
BSP318S
A
pF
Ciss
C
IF
10 1
10 2
Coss
10 0
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 1
0
5
10
15
20
25
30
V
10 -1
0.0
40
0.4
0.8
1.2
1.6
2.0
2.4 V
VSD
VDS
E AS = f (T j)
Avalanche Energy
3.0
Typ. gate charge
parameter: ID = 2.6 A, VDD = 25 V
RGS = 25 Ω
VGS = f (QGate )
parameter: ID = 2.6 A pulsed
BSP318S
65
16
mJ
V
55
50
12
VGS
EAS
45
40
10
35
8
30
0,2 VDS max
25
0,8 VDS max
6
20
4
15
10
2
5
0
20
40
60
80
100
120
°C
160
Tj
0
0
4
8
12
16
nC
24
QGate
Page 7
2008-03-21
Rev 2.2
BSP318S
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
BSP318S
72
V(BR)DSS
V
68
66
64
62
60
58
56
54
-60
-20
20
60
100
°C
180
Tj
Page 8
2008-03-21
Rev 2.2
Page 9
BSP318S
2008-03-21
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