Siemens BFS17W Npn silicon rf transistor (for broadband amplifiers up to 1ghz at collector currents from 1ma to 20ma) Datasheet

BFS 17W
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz at collector
currents from 1mA to 20mA
Type
Marking Ordering Code
Pin Configuration
BFS 17W
MCs
1=B
Q62702-F1645
2=E
Package
3=C
SOT-323
Maximum Ratings of any single Transistor
Parameter
Symbol
Collector-emitter voltage
VCEO
15
Collector-base voltage
VCBO
25
Emitter-base voltage
VEBO
2.5
Collector current
IC
25
Peak collector current
ICM
f ≥ 10 MHz
Values
Unit
V
mA
50
Ptot
Total power dissipation
TS ≤ 93 °C
mW
280
Junction temperature
Tj
Ambient temperature
TA
- 65 + 150
Storage temperature
Tstg
- 65 ... + 150
150
°C
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 205
K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group
1
Nov-28-1996
BFS 17W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics of any single Transistor
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-base cutoff current
V
15
-
-
ICBO
µA
VCB = 10 V, IE = 0
-
-
0.05
VCB = 25 V, IE = 0
-
-
10
-
-
100
Emitter-base cutoff current
IEBO
VEB = 2.5 V, IC = 0
DC current gain
hFE
-
IC = 2 mA, VCE = 1 V
20
-
150
IC = 25 mA, VCE = 1 V
20
70
-
Collector-emitter saturation voltage
VCEsat
IC = 10 mA, IB = 1 mA
Semiconductor Group
V
-
2
0.1
0.4
Nov-28-1996
BFS 17W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics of any single Transistor
Transition frequency
fT
GHz
IC = 2 mA, VCE = 5 V, f = 200 MHz
1
1.4
-
IC = 25 mA, VCE = 5 V, f = 200 MHz
1.3
2.5
-
Collector-base capacitance
Ccb
VCB = 5 V, VBE = vbe = 0 , f = 1 MHz
Collector-emitter capacitance
0.8
-
0.26
-
-
1.45
-
-
-
1.5
Cobs
VCE = 5 V, VBE = vbe = 0 , f = 1 MHz
Noise figure
0.6
Cibo
VEB = 0.5 V, IC = 0 , f = 1 MHz
Output capacitance
-
Cce
VCE = 5 V, VBE = vbe = 0 , f = 1 MHz
Input capacitance
pF
F
dB
IC = 2 mA, VCE = 5 V, f = 800 MHz
ZS = 0 Ω
Transducer gain
-
3.5
5
-
12.7
-
|S21e|2
IC = 20 mA, VCE = 5 V, f = 500 MHz
ZS = 50 Ω
Linear output voltage
V01=V02
mV
IC = 14 mA, VCE = 5 V, dim = 60 dB
f1 = 806 MHz, f2 = 810 MHz, ZS =ZL= 50 Ω
Third order intercept point
-
100
-
IP3
dBm
IC = 200 mA, VCE = 8 V, f = 900 MHz
ZS =ZL= 50 Ω
Semiconductor Group
-
3
23
-
Nov-28-1996
BFS 17W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
Ptot
TS
200
150
TA
100
50
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 3
K/W
-
RthJS
Ptotmax/PtotDC
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1
-6
10
10
-5
10
-4
Semiconductor Group
10
-3
10
10 1
-2
-1
10
s 10
tp
0
4
10 0
-6
10
10
-5
10
-4
10
-3
10
-2
-1
10
s 10
tp
0
Nov-28-1996
BFS 17W
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
1.3
3.0
pF
1.1
Ccb
GHz
10V
5V
3V
fT
1.0
0.9
2.0
0.8
2V
0.7
1.5
0.6
0.5
1.0
0.4
0.3
1V
0.5
0.2
0.7V
0.1
0.0
0.0
0
4
8
Semiconductor Group
12
16
20
V
26
V CB
5
0
5
10
15
20
mA
IC
30
Nov-28-1996
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