IXYS IXTC75N10 N-channel enhancement mode Datasheet

ADVANCE TECHNICAL INFORMATION
IXTC 75N10
MegaMOSTMFET
VDSS = 100 V
= 72 A
ID25
Ω
RDS(on) = 20 mΩ
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
100
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
100
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
72
A
IDM
TC = 25°C, pulse width limited by TJM
300
A
PD
TC = 25°C
230
W
-55 ... +150
°C
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
Md
Mounting torque
ISOPLUS 220TM
G
D
S
G = Gate,
S = Source
Isolated back surface*
D = Drain,
* Patent pending
1.13/10 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
2
g
300
°C
Features
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International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
V GS = 0 V, ID = 250 µA
100
VGS(th)
V DS = VGS, ID = 250 µA
2
IGSS
V GS = ±20 VDC, VDS = 0
IDSS
V DS = 0.8 VDSS
VGS = 0 V
RDS(on)
V
4
V
±100
nA
TJ = 25°C
TJ = 125°C
200
1
µA
mA
V GS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.020
© 2002 IXYS All rights reserved
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Advantages
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Ω
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
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Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
98881 (1/2)
IXTC 75N10
Symbol
Test Conditions
gfs
V DS = 10 V; ID = IT, pulse test
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
25
Ciss
S
4500
pF
1300
pF
Crss
550
pF
td(on)
40
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
td(off)
RG = 2 Ω, (External)
60
ns
60 110
ns
100 140
ns
30
60
ns
180 260
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
30
Qgd
70
nC
90 160
nC
0.54
K/W
RthJC
0.30
RthCK
Source-Drain Diode
Symbol
Test Conditions
IS
V GS = 0 V
ISM
ISOPLUS220 OUTLINE
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
75
A
Repetitive; pulse width limited by TJM
300
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.75
V
t rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
300
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
ns
Note: 1. IT = 37.5A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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