VISHAY SI8406DB

Si8406DB
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
20
RDS(on) () Max.
ID (A)
0.033 at VGS = 4.5 V
16e
0.037 at VGS = 2.5 V
16e
0.042 at VGS = 1.8 V
15
Qg (Typ.)
7.5 nC
MICRO FOOT
Bump Side View
S
• Load Switch
• Battery Management
• Boost Converter
1
3
D
6
XXX
S
8406
S
TrenchFET® Power MOSFET
Ultra-small 1.5 mm x 1 mm Maximum Outline
Ultra-thin 0.59 mm Maximum Height
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Backside View
G
2
•
•
•
•
D
D
4
5
G
Device Marking: 8406
xxx = Date/Lot Traceability Code
Ordering Information:
Si8406DB-T2-E1 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
13.5
ID
7.8a, b
6.2a, b
TA = 70 °C
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 70 °C
TA = 25 °C
11
IS
2.3a, b
13
8.4
PD
2.77a, b
Package Reflow
Conditionsc
W
1.77a, b
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
30
TC = 25 °C
Maximum Power Dissipation
V
16e
TC = 25 °C
TC = 70 °C
Unit
- 55 to 150
IR/Convection
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Case in defined as the top surface of the package.
e. TC = 25 °C package limited.
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
a, b
Maximum Junction-to-Ambient
Maximum Junction-to-Case
(Drain)c
Steady State
Symbol
Typical
Maximum
RthJA
37
45
RthJC
7
9.5
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 85 °C/W.
c. Case is defined as top surface of the package.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0, ID = 250 µA
20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistance
Forward Transconductancea
a
RDS(on)
gfs
V
18
mV/°C
-3
0.4
0.85
V
± 100
nA
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 70 °C
10
VDS  5 V, VGS = 4.5 V
5
µA
A
VGS = 4.5 V, ID = 1 A
0.026
0.033
VGS = 2.5 V, ID = 1 A
0.028
0.037
VGS = 1.8 V, ID = 1 A
0.030
0.042
VDS = 10 V, ID = 1 A
20

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
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2
830
VDS = 10 V, VGS = 0 V, f = 1 MHz
pF
146
61
VDS = 10 V, VGS = 8 V, ID = 1 A
13
20
7.5
12
VDS = 10 V, VGS = 4.5 V, ID = 1 A
1.1
VGS = 0.1 V, f = 1 MHz
3.6
VDD = 10 V, RL = 10 
ID  1 A, VGEN = 4.5 V, Rg = 1 
18
40
30
60
tf
10
20
td(on)
5
10
0.8
td(on)
tr
td(off)
tr
td(off)
nC
7
VDD = 10 V, RL = 10 
ID  1 A, VGEN = 8 V, Rg = 1 
tf
For technical questions, contact: [email protected]

15
17
35
25
50
10
20
ns
ns
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
IS
TC = 25 °C
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
20
30
IS = 1 A, VGS = 0
IF = 1 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.7
1.2
V
15
30
ns
5
10
nC
8
7
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
10
VGS = 5 V thru 2 V
25
8
ID - Drain Current (A)
ID - Drain Current (A)
VGS = 1.5 V
20
15
10
6
TC = 25 °C
4
TC = 125 °C
2
5
TC = - 55 °C
VGS = 1 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1200
0.040
900
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.036
VGS = 1.8 V
0.032
VGS = 2.5 V
0.028
VGS = 4.5 V
Ciss
600
300
Coss
0.024
Crss
0.020
0
0
5
10
15
20
25
30
0
8
12
16
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
20
1.6
ID = 1 A
RDS(on) - On-Resistance (Normalized)
8
VGS - Gate-to-Source Voltage (V)
4
ID - Drain Current (A)
VDS = 10 V
6
VDS = 5 V
4
VDS = 16 V
2
0
0
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4
3
6
9
12
15
ID = 1 A
VGS = 2.5 V, 1.8 V
1.4
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
150
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.08
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 1 A
TJ = 150 °C
10
TJ = 25 °C
1
0.1
0.06
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0.00
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
0.7
25
0.6
20
Power (W)
VGS(th) (V)
30
0.5
ID = 250 μA
10
0.3
5
25
50
75
100
TJ - Temperature (°C)
125
4
5
15
0.4
0
3
On-Resistance vs. Gate-to-Source Voltage
0.8
- 25
2
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.2
- 50
1
0
0.001
150
Threshold Voltage
0.01
0.1
1
Pulse (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms,1 s
10 s
DC
0.1
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
20
12
Package Limited
Power Dissipation (W)
ID - Drain Current (A)
16
12
8
9
6
3
4
0
0
0
25
50
75
100
125
150
25
50
75
100
TC - Ambient Temperature (°C)
T C - Case Temperature (°C)
Current Derating*
Power Derating
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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6
For technical questions, contact: [email protected]
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P DM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
0.02
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
For technical questions, contact: [email protected]
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8406DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 6-BUMP (0.5 mm PITCH)
6 x Ø 0.24 to 0.26 Note 3
Solder Mask ~ Ø 0.25
A1
e
A2
1
A
C
B
A
2
Bump Note 2
e
e
Recommended Land
S
S
D
S
G
e
8406
Mark on Backside of Die
s
XXX
D
D
s
6xØb
s
e
e
s
E
Notes (unless otherwise specified):
1. All dimensions are in millimeters.
2. Six (6) solder bumps are lead (Pb)-free 95.5Sn, 3.8Ag, 0.7Cu with diameter 0.30 mm to 0.32 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5. is location of pin 1.
·
Dim.
A
Millimetersa
Inches
Min.
Nom.
Max.
Min.
Nom.
Max.
0.510
0.575
0.590
0.0201
0.0224
0.0232
A1
0.220
0.250
0.280
0.0087
0.0098
0.0110
A2
0.290
0.300
0.310
0.0114
0.0118
0.0122
b
0.300
0.310
0.320
0.0118
0.0122
0.0126
e
0.500
0.0197
s
0.230
0.250
0.270
0.0090
0.0098
0.0106
D
0.920
0.960
1.000
0.0362
0.0378
0.0394
E
1.420
1.460
1.500
0.0559
0.0575
0.0591
Note:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62530.
www.vishay.com
8
For technical questions, contact: [email protected]
Document Number: 62530
S12-0978-Rev. A, 30-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
Mouser Electronics
Authorized Distributor
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SI8406DB-T2-E1